Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications

2018 ◽  
Author(s):  
Praveen K. Revuri ◽  
D.K. Tripathi ◽  
M. Martyniuk ◽  
K. K. M. B. D. Silva ◽  
G. Putrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
High Rate

scholarly journals Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films

2014 ◽  
Vol 32 (4) ◽  
pp. 041515 ◽  
Author(s):  
Grzegorz Greczynski ◽  
Jun Lu ◽  
Stephan Bolz ◽  
Werner Kölker ◽  
Christoph Schiffers ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Rate ◽  
Ceramic Thin Films ◽  
Refractory Ceramic ◽  
Novel Strategy

scholarly journals Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Akarapu Ashok ◽  
Prem Pal
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Anodic Oxidation ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Oxide Films ◽  
Mechanical Stirring

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

High Rate Deposition of Silicon Dioxide Membrane by Excimer Laser Enhanced Projection Chemical Vapor Deposition from Organic Compounds at Low Temperature

1993 ◽  
Vol 32 (Part 1, No. 6B) ◽  
pp. 3109-3112 ◽  
Author(s):  
Seiichirou Tomoura ◽  
Kouji Takashima ◽  
Kazuyuki Minami ◽  
Masaki Esashi ◽  
Jun-ichi Nishizawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Organic Compounds ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Rate

Low Temperature Silicon Dioxide Thin Films Deposited Using Tetramethylsilane for Stress Control and Coverage Applications

2001 ◽  
Vol 695 ◽  
Author(s):  
Xin Lin ◽  
Stephen J. Fonash
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Large Area ◽  
Deposition Pressure ◽  
Micro Electro Mechanical Systems ◽  
Stress Control ◽  
Deposition Conditions

ABSTRACTLow temperature silicon dioxide thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon precursor at 100- 200°C in the pressure range of 2- 8 Torr. PECVD TMS oxide thin films deposited at these temperatures and pressures exhibit adjustable stress. The type of stress, including tensile stress, zero stress, and compressive stress, as well as the stress level can be tailored as desired by changing the deposition conditions and film thickness. In addition, the conformality of PECVD TMS oxide thin films varies significantly with the deposition conditions. It improves when the deposition pressure is raised and the substrate temperature is reduced. The mechanisms for the variations of stress and conformality with respect to deposition conditions are discussed in this study. The adjustable stress and conformality of the PECVD TMS oxide make it a promising material for many low temperature applications, such as inter-level dielectric, micro-electro-mechanical systems (MEMs), microfabrication, and large area electronics.

Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

scholarly journals Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se2 Thin Films

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3596
Author(s):  
Deewakar Poudel ◽  
Benjamin Belfore ◽  
Tasnuva Ashrafee ◽  
Shankar Karki ◽  
Grace Rajan ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Single Stage ◽  
High Rate ◽  
Chemical Analyses ◽  
Different Types ◽  
Stage Process ◽  
Post Deposition

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

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