Impact of ALCVD and PVD Titanium Nitride Deposition on Metal Gate Capacitors

2002 ◽  
Author(s):  
G. Lujan ◽  
T. Schram ◽  
L. Pantisano ◽  
J. Hooker ◽  
S. Kubicek ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Metal Gate

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

2005 ◽  
Vol 82 (3-4) ◽  
pp. 248-253 ◽  
Author(s):  
F. Fillot ◽  
T. Morel ◽  
S. Minoret ◽  
I. Matko ◽  
S. Maîtrejean ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Metal Gate ◽  
Layer Deposition ◽  
Metal Organic

Design of Triple Gate for Sub threshold Low Power applications

2017 ◽  
Vol 67 (2) ◽  
pp. 169
Author(s):  
Flavia Princess Nesamani ◽  
Geetanjali Raveendran ◽  
V.Lakshmi Prabha
Keyword(s):  
Titanium Nitride ◽  
Threshold Voltage ◽  
Double Gate ◽  
Subthreshold Slope ◽  
Metal Gate ◽  
Short Channel ◽  
Gate Electrodes ◽  
Time Fall ◽  
Corner Effects ◽  
Novel Design

<p>A novel design of triple gate MOSFET structure with metal gate and an underlap channel is proposed to minimise the short channel and corner effects. The gate metal used is titanium nitride as well as source and drain is diffused with titanium nitride so as to increase the drive capability of the device. To obtain subthreshold threshold voltage operation of the device, the gates are kept symmetric and the gate electrodes corner segments are rounded off to minimise leakage. The device shows significant improvement over conventional double gate FinFET and triple gate device without gate corner round off device in terms of Ion, Ioff ratio, DIBL, subthreshold slope, rise time, fall time.</p>

Selective Nickel Platinum Removal without Titanium Nitride Metal Gate Corrosion

2021 ◽  
Vol 314 ◽  
pp. 289-294
Author(s):  
Philippe Garnier ◽  
Marine Audouin ◽  
Christian Pizzetti ◽  
Virginie Loup ◽  
Laurence Gabette ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Metal Alloy ◽  
Silicide Formation ◽  
Metal Gate ◽  
Aqua Regia ◽  
Metal Gates ◽  
High K ◽  
Nickel Platinum

During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t perfectly encapsulated. First some new characterizations are presented to better understand the NiPt metal alloy removal, then a new solution is given to be able to remove this alloy without degrading HKMG materials.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

GLANCING INCIDENCE X-RAY STUDIES OF TITANIUM NITRIDE THIN FILMS USING A NEW MULTIPURPOSE LABORATORY SPECTROMETER

1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
X Ray

Tribotechnical Characteristics of Titanium Nitride Coating for Heavy-Duty Friction Clutches.

1980 ◽  
Vol 41 (5) ◽  
pp. 558-566
Author(s):  
O. Yu Elagina ◽  
◽  
D.O. Kolbas ◽  
A.G. Buklakov ◽  
N. Derr ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Nitride Coating ◽  
Heavy Duty ◽  
Titanium Nitride Coating ◽  
Tribotechnical Characteristics
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