Study of Silver-graphene Tungsten Material For Low Voltage Electrical Contact

2019 ◽  
Author(s):  
Hai Chen ◽  
Pengpeng Wang ◽  
Jesus Hernandez
Keyword(s):  
Low Voltage ◽  
Electrical Contact ◽  
Tungsten Material

Conducting Properties of a Contact Between Open-End Carbon Nanotube and Various Electrodes

2009 ◽  
Author(s):  
Feng Gao ◽  
Jianmin Qu ◽  
Matthew Yao
Keyword(s):  
Electronic Structure ◽  
Carbon Nanotube ◽  
Density Functional ◽  
Low Voltage ◽  
Local Density ◽  
Electrical Contact ◽  
Metal Electrode ◽  
Electrode System ◽  
Voltage Bias ◽  
Electronic Conductance

The carbon nanotube (CNT) is becoming a promising candidate as electrical interconnects in nanoscale electronics. This paper reports the electronic structure and the electrical conducting properties at the interface between an open-end single wall CNT (SWCNT) and various metal electrodes, such as Al, Au, Cu, and Pd. A simulation cell consisting of an SWCNT with each end connected to the metal electrode was constructed. A voltage bias is prescribed between the left- and right-electrodes to compute the electronic conductance. Due to the electronic structure, the electron density and local density of states (LDOS) are calculated to reveal the interaction behavior at the interfaces. The first-principle quantum mechanical density functional and non-equilibrium Green’s function (NEGF) approaches are adopted to compute the transport coefficient. After that, the voltage-current relation is calculated using the Landauer-Buttiker formalism. The results show that electrons are conducted through the electrode/CNT/electrode two-probe system. The contact electronic resistance is calculated by averaging the values in the low voltage bias regime (0.0–0.1 V), in which the voltage–current relationship is found to be linear. And the electrical contact conductance of electrode/CNT/electrode system show the electrode-type dependent, however, the amplitude for different electrodes is of the same order.

The Application of the Wettability of Liquid-Solid in the Manufacture of High and Low Voltage Contacts

2011 ◽  
Vol 66-68 ◽  
pp. 2122-2129
Author(s):  
Shi Jun Chen ◽  
Pei Lin Duan
Keyword(s):  
Melting Point ◽  
Low Voltage ◽  
Electrical Contact ◽  
High Melting ◽  
High Melting Point ◽  
Contact Materials ◽  
Subsequent Processing

High or low voltage electrical contact is a kind of pseudo alloy which is mostly composed of a high melting point material and a low one. Liquid-solid wettability is widely used in the manufacture of contact materials and its subsequent processing. This article focuses on several solutions to the difficulties encountered during the process by liquid-solid wettability.

Electronic Structure and Contact Resistance at the Interface Between Carbon Nanotubes and Copper Pad

2009 ◽  
Author(s):  
Feng Gao ◽  
Jianmin Qu ◽  
Matthew Yao
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Contact Resistance ◽  
Density Functional ◽  
Low Voltage ◽  
Local Density ◽  
Electrical Contact ◽  
Average Density ◽  
Electrical Contact Resistance ◽  
Electrical Interconnects

Due to their unique and superior mechanical and electrical properties, carbon nanotubes (CNTs) are a promising candidate as electrical interconnects in nanoscale electronics. A key element in using CNT as electrical interconnects is the full understanding of the mechanical and electrical behavior of the interface between the CNT and copper (Cu) pad. The objective of this paper is to study the electronic structure and the electrical contact resistance at the interface between the open end of a single wall CNT and a Cu pad. To accomplish this, simulation cell consisting of an open-end single wall CNT with each end connected to a Cu electrode was created. The Cu/CNT/Cu system is fully relaxed first before a potential bias is prescribed between the Cu electrodes. The first-principle quantum mechanical density functional and non-equilibrium Green’s function (NEGF) approaches are adopted to compute the transport coefficient, while the current-voltage (I-V) relation is then extracted by invoking the Landauer-Buttiker formalism. The average density of state (DOS) and local density of states (LDOS) are also calculated to obtain the electron energy distribution around Fermi level point. Our simulation results show that electrons are conducted through the Cu/CNT/Cu system. In the low voltage bias regime (0.0∼0.1 V), I-V relationship is found to be linear. At higher voltage (> 2.0 V), the I-V relationship is nonlinear. Our results also show that the electrical contact resistance at the CNT/Cu interface is ∼3.6 kΩ at 0.1 V, and ∼4.8 kΩ at 2.0 V. These results indicate that for open-end CNTs, the contact resistance at the CNT/Cu interface is at least comparable to that of solder/Cu interface.

A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy

2020 ◽  
Author(s):  
Nirmal Adhikari ◽  
Phil Kaszuba ◽  
Gaitan Mathieu ◽  
Erik McCullen ◽  
Thom Hartswick ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Low Voltage ◽  
Negative Impact ◽  
Electrical Contact ◽  
Process Models ◽  
Ion Milling ◽  
Cross Sectional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Profile Control

Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negative impact on these emerging technologies. Therefore, there exists a critical need for dopant profiling in the industry to support the latest technologies that use FinFETs as their fundamental building block [1]. Here, we discuss a novel sample preparation method for cross-sectional dopant profiling of FinFET devices. Our results show that the combination of low voltage (<500eV), shallow angle (~10 degree) ion milling, dry etching, and mechanical polishing provides an adequately smooth surface (Rq<5Å) and minimizes surface amorphization, thereby allowing a strong Scanning Capacitance Microscopy (SCM) signal representative of local active dopant (carrier) concentration. The strength of the dopant signal was found to be dependent upon mill rate, electrical contact quality, amorphous layer presence and SCM probe quality. This paper focuses on a procedure to overcome critical issues during sample preparation for dopant profiling in FinFETs.

Study on Detection Method of Electrical Shock Current Based on Sliding Window and Wavelet Transform

2013 ◽  
Vol 860-863 ◽  
pp. 2035-2039
Author(s):  
Chun Lan Li ◽  
Song Huai Du ◽  
Zhai Shi ◽  
Juan Su
Keyword(s):  
Leakage Current ◽  
Electric Shock ◽  
Detection Method ◽  
Low Voltage ◽  
Electrical Contact ◽  
Rapid Change ◽  
Sliding Window ◽  
Electrical Shock ◽  
Window Method ◽  
Sliding Window Method

With the popularization of the rural electricity utilization, the rural electric safety was still an immediate problem to be solved. It was difficult to exactly detect and judge electric shock signals in the summation leakage current on the low-voltage electric power grid. A detection method of electrical contact signals based on sliding window and wavelet multi-resolution method was proposed. Under the different signal-to-noise ratio level, the summation leakage current was reconstructed by wavelet decomposition reconstruction algorithm. According to the characteristic of the slow change of the normal leakage current and the rapid change of the electric shock current within a short time, the electric shock current were extracted from the restructured summation leakage current signal by sliding window method. The mean square error and correlation analysis between the extracted signal and the actual testing results were studied. The analysis results show that the proposed method could identify electric shock current in the summation leakage current among noise, and its detection precision was superior to single sliding window method.

Light-Controlled Switching Transients in Mis Silicon Structures with Multichannel Insulator: Physical Processes and New Device Modelling

1997 ◽  
Vol 490 ◽  
Author(s):  
A. Malik ◽  
R. Martins
Keyword(s):  
Low Voltage ◽  
Spray Pyrolysis Technique ◽  
Electrical Contact ◽  
Optoelectronic Device ◽  
Operating Characteristics ◽  
Insulator Layer ◽  
Optical Signals ◽  
New Device ◽  
Controlled Switching ◽  
Wide Range

ABSTRACTWe present the modelling of a new two-terminal and low-voltage operating optoelectronic device based on MIS silicon structure with multichannel insulator and having as gate a transparent metallic tin-doped indium oxide (ITO) layer deposited by spray pyrolysis technique over the insulator layer. ITO layer has a multiple non-rectifier electrical contact with silicon substrate, in the SiO2 channel's region. Construction details of the process, together with its operating characteristics are given. The devices developed do not require external active electronic components (transistors, microschemes) to execute their functions and to transform analogue input optical signals to digital output form, highly important for a wide range of optoelectronic applications.

Some Considerations Concerning the Obtaining of Some Ag-SnO2 Sintered Electrical Contacts for Low Voltage Power Engineering Switching Devices

2007 ◽  
Vol 23 ◽  
pp. 103-106 ◽  
Author(s):  
Magdalena Lungu ◽  
Stefania Gavriliu ◽  
Delia Patroi ◽  
Mariana Lucaci
Keyword(s):  
Low Voltage ◽  
Electrical Contact ◽  
Electrical Contacts ◽  
Power Engineering ◽  
Contact Materials ◽  
Metallic Oxides ◽  
New Type ◽  
Electrical Contact Materials ◽  
Switching Devices

The paper presents some considerations concerning the obtaining and characterisation of some new electrical contact pieces of Ag-SnO2-MeO type, where the MeO is an additive chose from the series of metallic oxides WO3, Bi2O3 and CuO. These have a SnO2 content of 9.5 wt. %, a MeO content of 0.5 wt. %, the balance being Ag. The electrical contact materials were manufactured by powder metallurgy techniques using a new type of powder mixtures obtained from SnO2 and MeO powders which were wet mixed, simultaneously with “in situ” Ag synthesis. These present a very uniform and fine dispersion, which in turn leads to improved functional characteristics of the final electrical contact pieces in comparison to the dry mechanical powders mixtures. The new products were designed for low voltage power engineering switching devices working in air at In = 40, 125 and 200 A.

scholarly journals Properties of Ag-SnO2 Contact Materials for Low-Voltage Electrical Appliances with Different Doped Particle Sizes

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Haitao Wang ◽  
Mei Zhang ◽  
Menglin Yang
Keyword(s):  
Particle Size ◽  
Low Voltage ◽  
Electrical Contact ◽  
Powder Metallurgy Method ◽  
Particle Sizes ◽  
Contact Materials ◽  
Additive Particle ◽  
Surface Morphologies ◽  
The Relationship ◽  
Scanning Electron

In this paper, the relationship between additive particle size and properties of Ag-SnO2 contact materials was studied. La2O3 and Fe2O3 were selected as additives for contact materials, and the proportion of additives were determined by wettability experiment results; Ag-SnO2 contact materials were successfully fabricated by the powder metallurgy method, and the physical and electrical contact properties of Ag-SnO2 contact materials with five additive particle sizes were investigated. The results show the influence of additives on the properties of Ag-SnO2 contact materials are disparate, the contact resistance and arc energy are smaller and more stable when the additive particle size is about 500 nm. For further proving this conclusion, the arc-eroded surface morphologies of the doped AgSnO2 contact materials were investigated by scanning electron microscopy (SEM), which indicated that the properties of two kinds of Ag-SnO2 contact materials could be improved significantly by selecting appropriate additive particle size.

Ignition of a hydrogen–air mixture by low voltage electrical contact arcs

2017 ◽  
Vol 186 ◽  
pp. 236-246 ◽  
Author(s):  
Rajiv Shekhar ◽  
Lorenz R. Boeck ◽  
Carsten Uber ◽  
Udo Gerlach
Keyword(s):  
Low Voltage ◽  
Electrical Contact

scholarly journals Numerical Simulation of the Temperature and Stress Field Evolution Applied to the Field Assisted Sintering Technique

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
J. B. Allen ◽  
C. Walter
Keyword(s):  
Low Voltage ◽  
Complete Solution ◽  
Electrical Contact ◽  
Element Model ◽  
Mechanical Analysis ◽  
Contact Forces ◽  
Uniaxial Pressure ◽  
Experimental Conditions ◽  
Powder Consolidation ◽  
Field Assisted Sintering

The field assisted sintering technique (FAST) is a high-amperage, low-voltage, powder consolidation technique that employs pulsed direct current and uniaxial pressure. Over the past several years, FAST has been successfully used to produce a variety of different materials including metals, composites, and ceramics. In this paper we present a transient finite element model of aluminum oxide sintering that incorporates a coupled electrical, thermal, and mechanical analysis that closely resembles the procedures used in physical experiments. Within this context, we outline the governing equations that pertain to a balanced energy equation and include the effects of thermal and electrical contact forces, radiation, and Joule heating. We couple this with the relevant equations pertaining to mechanical displacements and prescribe the necessary initial and boundary conditions for a complete solution. As part of our transient analysis, we also present our implementation of a proportional integral derivative controller, which (similar to actual experimental conditions) affords the use of a predetermined heating rate conditioned upon a variable voltage. Finally, we discuss implications relating to the temperature and stress fields and suggest possible avenues for improvement.

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