Design and software characterization of finFET based full adders

Adder is the most important arithmetic block that are used in all processors. Most of the logical circuits till today were designed using Metal Oxide Semiconductor Field Effect Transistors (MOSFET’s). In order to reduce chip area, leakage power and to increase switching speed, MOSFET’s were continuously scaled down. Further scaling below 45nm, MOSFET’s suffers from Short Channel Effects (SCE’s) which leads to degraded performance of the device. Here the Performance of 28T and 16T MOSFET based 1-bit full adder cell is characterized and compared with FinFET based 28T and 16T 1-bit full adders at various technology nodes using HSPICE software. Results show that FinFET based full adder design gives better performance in terms of speed, power and reliability compared to MOSFET based full adder designs. Hence FinFET are promising candidates and better replacement for MOSFET.

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Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2667 ◽

2019 ◽

Vol 14 (12) ◽

pp. 1672-1679 ◽

Cited By ~ 1

Author(s):

Ningombam Ajit Kumar ◽

Aheibam Dinamani Singh ◽

Nameirakpam Basanta Singh

Keyword(s):

Surface Potential ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Parabolic Approximation ◽

Short Channel ◽

Channel Characteristic ◽

Channel Effects ◽

And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

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Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6508 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6508-6509 ◽

Cited By ~ 16

Author(s):

M. Jagadesh Kumar ◽

G. Venkateshwar Reddy

Keyword(s):

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Step Potential ◽

Back Gate ◽

Channel Effects

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Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c054 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C054

Author(s):

Kenta Ishimura ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1474422 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1030-1033 ◽

Cited By ~ 1

Author(s):

P. W. Li ◽

W. M. Liao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.200990031 ◽

2009 ◽

Vol 19 (8) ◽

pp. NA-NA ◽

Cited By ~ 1

Author(s):

Colin Reese ◽

Zhenan Bao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Field Effect Mobility ◽

Short Channel ◽

Detailed Characterization ◽

Crystal Field Effect ◽

Channel Effects ◽

Dependent Field

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Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Advances in Technology Innovation ◽

10.46604/aiti.2021.8098 ◽

2021 ◽

Vol 7 (1) ◽

pp. 18-29

Author(s):

Vinod Pralhad Tayade ◽

Swapnil Laxman Lahudkar

Keyword(s):

Low Power ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

20 Nm ◽

Graphene Material

In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

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