Temperature dependence of Linearity and RF Performance metrics in DMG GaSb-Si Nanowire TFET

2021 ◽  
Author(s):  
Ritwik Sharma ◽  
Dharmendra Singh Yadav
Keyword(s):  
Temperature Dependence ◽  
Performance Metrics ◽  
Si Nanowire ◽  
Rf Performance

NUMERICAL INVESTIGATION ON THE TEMPERATURE DEPENDENCE OF THE CYLINDRICAL-GATE-ALL-AROUND Si-NW-FET

2011 ◽  
Vol 25 (29) ◽  
pp. 2269-2278 ◽  
Author(s):  
SEYED ALI SEDIGH-ZYIABARI ◽  
KAMYAR SAGHAFI ◽  
RAHIM FAEZ ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI
Keyword(s):  
Temperature Dependence ◽  
Numerical Investigation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Energy Band Structure ◽  
Linear Functions ◽  
Effect Of Temperature ◽  
Si Nanowire ◽  
Effect Transistor

We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor ( Si -NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K ). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220–140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and various VGS, we show that the temperature sensitivity of the drain current defined as the slope of the IDS - T plot, for a given VGS, is independent of the temperature and increases with VGS in a quadratic manner [- 150 × (VGS - 0.50)2 + 8.5 (nA/K)]. Ultimately, the dependence of the transistor delay time on temperature will be presented.

Temperature Dependence of Si Nanowire Morphology

2001 ◽  
Vol 13 (5) ◽  
pp. 317-320 ◽  
Author(s):  
H. Y. Peng ◽  
Z. W. Pan ◽  
L. Xu ◽  
X. H. Fan ◽  
N. Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Si Nanowire

Impact of gate to source/drain alignment on the static and RF performance of junctionless Si nanowire n-MOSFETs

2020 ◽  
Vol 169 ◽  
pp. 107817
Author(s):  
Qinghua Han ◽  
Mingshan Liu ◽  
Babak Kazemi Esfeh ◽  
Jin Hee Bae ◽  
Jean-Pierre Raskin ◽  
...  
Keyword(s):  
Si Nanowire ◽  
Rf Performance

Temperature impact on linearity and analog/RF performance metrics of a novel charge plasma tunnel FET

2021 ◽  
Vol 127 (4) ◽  
Author(s):  
Nitish Parmar ◽  
Prabhat Singh ◽  
Dip Prakash Samajdar ◽  
Dharmendra Singh Yadav
Keyword(s):  
Performance Metrics ◽  
Charge Plasma ◽  
Tunnel Fet ◽  
Temperature Impact ◽  
Rf Performance

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

2007 ◽  
Vol 54 (6) ◽  
pp. 1288-1294 ◽  
Author(s):  
Runsheng Wang ◽  
Jing Zhuge ◽  
Ru Huang ◽  
Yu Tian ◽  
Han Xiao ◽  
...  
Keyword(s):  
Process Variation ◽  
Si Nanowire ◽  
Nanowire Mosfets ◽  
Rf Performance ◽  
The Impact

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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