Morphology Control of Mixed Halide Perovskite for its Application in Low-cost Thin Film Transistor

Author(s):  
Anwesha Choudhury ◽  
Priyanka Dogra ◽  
Biki Teron ◽  
Ritesh Kant Gupta ◽  
Anamika Dey ◽  
...  
Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.


1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.


2012 ◽  
Vol 20 (4) ◽  
pp. 175 ◽  
Author(s):  
Linfeng Lan ◽  
Nana Xiong ◽  
Peng Xiao ◽  
Wen Shi ◽  
Miao Xu ◽  
...  

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.


2020 ◽  
Vol 7 (1) ◽  
Author(s):  
An Hoang-Thuy Nguyen ◽  
Manh-Cuong Nguyen ◽  
Seongyong Cho ◽  
Anh-Duy Nguyen ◽  
Hyewon Kim ◽  
...  

Abstract This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive tactile force sensor. The suspended membrane gate with an air gap as the insulator layer is formed by multiple photolithography steps and photoresist sacrificial layers. The viscosity of the photoresist and the spin speed was used to modify the thickness of the air gap during the coating process. The tactile force was measured by monitoring the drain current of the TFT as the force changed the thickness of the air gap. The sensitivity of the devices was enhanced by an optimal gate size and low Young’s modulus of the gate material. This simple process has the potential for the production of small, versatile, and highly sensitive sensors.


2015 ◽  
Vol 1107 ◽  
pp. 514-519
Author(s):  
Umar Faruk Shuib ◽  
Khairul Anuar Mohamad ◽  
Afishah Alias ◽  
Tamer A. Tabet ◽  
Bablu K. Gosh ◽  
...  

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.


2021 ◽  
Author(s):  
Ya-Wen Lin ◽  
Wei-Hao Lee ◽  
Hsiou-Hsuan Wang ◽  
Ta-Wui Cheng ◽  
Chiao-Ying Chen ◽  
...  

Abstract The preparation of an aluminum-mesoporous humidity controlling material (Al-MHCM) by hydrothermally synthesizing a mixture of thin-film transistor liquid crystal display (TFT-LCD) waste glass and sandblasting (SB) waste was studied; additionally, the remaining residue was completely reused. The synthesized Al-MHCM was analyzed, and its moisture controlling performance along with its pore and surface structure characteristics were determined. In addition, the influence of the hydrothermal synthesis temperature and silicon-to-aluminum molar ratio on the product was also studied. The characteristic analysis results of the product confirm that the product has a typical mesoporous structure, with a specific surface area of up to 1013 m2/g, and the pore size distribution calculated by the BJH method is 3-4 nm with a pore volume of 0.97 cm3/g. The 27Al NMR analysis verifies that all the aluminum atoms of the product are in the form of tetrahedral aluminum (Td-Al) in the mesoporous Al-MHCM framework, which confirms the successful synthesis of Al-containing mesoporous MCM-41 materials. In addition, as the aluminum content increased, the water adsorption/desorption capacity of Al-MHCM also increased. Results show that when the hydrothermal synthesis temperature is 105°C, the product synthesized from a mixture with a silicon-to-aluminum molar ratio of 41.8 exhibits excellent performance (91.45 m3/ m3) in terms of the equilibrium moisture content and moisture adsorption capacity. Al-MHCM, which can be synthesized at a low cost, can be used as a humidity controlling material for adjusting the relative humidity of indoor environmental spaces. Thus, this study provides a novel method for producing Al-MHCM to use as a future humidity-controlling building material.


Author(s):  
Youssef Ahmed Mobarak ◽  
Moamen Atef

<span>The potential impact of high permittivity gate dielectrics on thin film transistors short channel and circuit performance has been studied using <a name="OLE_LINK110"></a><a name="OLE_LINK118"></a>highly accurate analytical models. In addition, the gate-to-channel capacitance and parasitic fringe capacitances have been extracted. The suggested model in this paper has been <a name="OLE_LINK37"></a><a name="OLE_LINK36"></a>increased the surface potential and decreased the <a name="OLE_LINK93"></a><a name="OLE_LINK92"></a>threshold voltage, whenever the conventional silicon dioxide gate dielectric<a name="OLE_LINK290"></a><a name="OLE_LINK280"></a> is replaced by high-K gate dielectric novel nanocomposite PVP/La<sub>2</sub>O<sub>3</sub>K<sub>ox</sub>=25. Also, it has been investigated that a decrease in parasitic outer fringe capacitance and gate-to-channel capacitance, whenever the conventional silicon nitride is replaced by low-K gate sidewall spacer dielectric novel nanocomposite PTFE/SiO<sub>2</sub>K<sub>sp</sub>=2.9. Finally, it has been demonstrated that using low-K gate sidewalls with high-K gate insulators can be decreased the gate fringing field and threshold voltage. In addition, fabrication of nanocomposites from polymers and nano-oxide particles found to have potential candidates for using it in a wide range of applications in low cost due to low process temperature of these nanocomposites materials.</span>


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