The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter

2020 ◽  
Vol 1004 ◽  
pp. 1045-1053
Author(s):  
Heng Lee ◽  
Chun Kai Liu ◽  
Tao Chih Chang
Keyword(s):  
Ambient Temperature ◽  
Junction Temperature ◽  
System Level ◽  
Switching Frequency ◽  
Power Module ◽  
Ambient Temperatures ◽  
Three Phase ◽  
Type Power ◽  
Three Phase Inverter ◽  
Better Than

This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

scholarly journals Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L

2011 ◽  
Vol 679-680 ◽  
pp. 738-741 ◽  
Author(s):  
Shinji Sato ◽  
Kohei Matsui ◽  
Yusuke Zushi ◽  
Yoshinori Murakami ◽  
Satoshi Tanimoto ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Junction Temperature ◽  
Power Module ◽  
Phase Inverter ◽  
Design Specifications ◽  
Three Phase ◽  
Temperature Operating ◽  
Forced Air ◽  
Three Phase Inverter

A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The inverter can operate steadily at a rated power of 10 kW in a junction temperature range up to 200°C. Output power density of more than 20 kW/L was achieved. The design specifications, the power module fabrication process, the results of a high-temperature operating test and a continuous switching test are described in turn.

Thermal Analysis of EPAS Power Module

2001 ◽  
Author(s):  
Ram Farhi
Keyword(s):  
Thermal Response ◽  
Junction Temperature ◽  
Brushless Dc Motor ◽  
Voltage Measurement ◽  
Power Module ◽  
Brushless Dc ◽  
Fea Model ◽  
Design Changes ◽  
Three Phase ◽  
Three Phase Inverter

Abstract The continuous improvement of robust design for reliability is possible by the implementation of Finite Element Methods (FEM). Thermal response of a chip-and-wire power module was studied to verify and optimize the design. The power module drives a three-phase Brushless DC motor in an Electric Power Assisted Steering (EPAS) system. It has a power output of ∼1.5kW with a peak current of 125A and with thermal efficiency of 86%. The three-phase inverter is built with 12 dies (2 parallel FETs per switch), and it is constructed on an Insulated Metal Substrate (IMS) and copper lead frame. The FEA model was verified experimentally using a Forward Looking Infra Red (FLIR) system and a threshold voltage measurement for the junction temperatures. Experimental and FEA results show the peak junction temperature is less than 130°C and the thermal resistance is 1.2C/W. In addition to design changes and refinement of process prior to fabrication, the FEA approach enabled the study of competing design approaches without sacrificing valuable time.

scholarly journals Influence of PWM Methods on Semiconductor Losses and Thermal Cycling of 15-kVA Three-Phase SiC Inverter for Aircraft Applications

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 620 ◽  
Author(s):  
Bernardo Cougo ◽  
Lenin Morais ◽  
Gilles Segond ◽  
Raphael Riva ◽  
Hoan Tran Duc
Keyword(s):  
Thermal Cycling ◽  
Thermal Stresses ◽  
Pulse Width Modulation ◽  
Junction Temperature ◽  
Phase Inverter ◽  
Instantaneous Power ◽  
Power Modules ◽  
Temperature Swing ◽  
Three Phase ◽  
Three Phase Inverter

This paper presents the influence of different pulse width modulation (PWM) methods on losses and thermal stresses in SiC power modules used in a three-phase inverter. The variation of PWM methods directly impacts instantaneous losses on these semiconductors, consequently resulting in junction temperature swing at the fundamental frequency of the converter’s output current. This thermal cycling can significantly reduce the lifetime of these components. In order to determine semiconductor losses, one needs to characterize SiC devices to calculate the instantaneous power. The characterization methodology of the devices, the calculation of instantaneous power and temperature of SiC dies, and the influence of the different PWM methods are presented. A 15-kVA inverter is built in order to obtain experimental results to confirm the characterization and loss calculation, and we show the best PWM methods to increase efficiency and reliability of the three-phase inverter for specific aircraft applications.

An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA

2011 ◽  
Vol 679-680 ◽  
pp. 531-534 ◽  
Author(s):  
Dethard Peters ◽  
Bernd Thomas ◽  
T. Duetemeyer ◽  
T. Hunger ◽  
R. Sommer
Keyword(s):  
Base Plate ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Pin Diode ◽  
Power Module ◽  
Medium Voltage ◽  
Conduction Loss ◽  
Voltage Drops ◽  
First Results ◽  
Dynamic Loss

The paper describes first results of 6.5 kV SiC PiN diode modules which are designed as neutral point valves for medium-voltage power inverters rated for 1000 A. The power module consists of 4 AlN DCB substrates soldered on an AlSiC base plate. Each DCB is equipped with 20 SiC PiN diodes operating in parallel. The total active area of all 80 diode chips is 5.68 cm². At the rated current of 2 x 500A the forward voltage drops from 4.1 V at room temperature to 3.9 V at an averaged junction temperature of 125°C. The switching experiments show a very low reverse recovery charge of about 30 µC only. The conduction loss is comparable to the corresponding 6.5 kV silicon diode whereas the dynamic loss is marginal with respect to the forward conduction loss if the switching frequency is held below 10 kHz.

High Temperature SiC Power Module Packaging

2009 ◽  
Author(s):  
Brian Rowden ◽  
Alan Mantooth ◽  
Simon Ang ◽  
Alex Lostetter ◽  
Jared Hornberger ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
High Reliability ◽  
Extreme Environments ◽  
Transient Liquid Phase ◽  
Wide Band ◽  
Junction Temperature ◽  
System Level ◽  
Thermal Impedance ◽  
Power Module

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.

Hand-Skin Temperature and Dexterity

1979 ◽  
Vol 23 (1) ◽  
pp. 183-187
Author(s):  
Michael W. Riley ◽  
Denise M. Allison
Keyword(s):  
Ambient Temperature ◽  
Skin Temperature ◽  
Research Study ◽  
Measurement Methods ◽  
Industrial Worker ◽  
Male And Female ◽  
Assembly Task ◽  
Ambient Temperatures ◽  
Better Than ◽  
Female Subjects

This research study examined the dexterity performance of both male and female subjects at ambient temperatures of 35°, 55° and 75°F. Subjects wore typical industrial worker apparel without gloves. Four dexterity measurement methods were used. These were 1) Purdue Pegboard, 2) pencil point tapping, 3) an assembly task, and 4) a fine manipulative task. The subject's performance scores at the various tasks were correlated with the ambient temperature and the hand-skin temperature. Results indicate that females scored better than males on the Purdue Pegboard and a fine manipulative task at all temperatures, while males scored better in pencil point tapping and an assembly task.

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