Fabrication and characterization of Yb-doped Y2O3 powders and thin films

2020 ◽  
Vol 111 (7) ◽  
pp. 559-566
Author(s):  
Elif Emil Kaya ◽  
Fatma Ünal ◽  
Kürşat Kazmanlıa ◽  
Sebahattin Gürmena
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Dopant Concentration ◽  
Sol Gel ◽  
Lattice Parameter ◽  
Electron Beam Evaporation ◽  
Glass Substrates ◽  
Corning Glass ◽  
Peak Broadening ◽  
Evaporation Technique

Abstract Yttrium oxide (Y2O3) and ytterbium (Yb)-doped Y2O3 particles were synthesized via the sol-gel method from the aqueous solution of their nitrate salts. The synthesized powders were then deposited on Corning glass substrates using an electron beam evaporation technique to examine the growth morphology of the thin films. The effect of the Yb dopant concentration on the microstructure and morphology of the Y2O3 powders and thin films was investigated using various characterization techniques. The synthesized powders and fabricated thin films have body-centered cubic structures with space group Ia-3. Based on the X-ray peak broadening, crystallite size and lattice parameters were evaluated with the Williamsom-Hall and Cohen-Wagner methods. The lattice parameter and crystallite size decrease with increasing Yb concentration. The intensities of the Raman peaks decrease due to microstructural disorder caused by the increase in the Yb dopant concentration. The band gap values of the powders also decrease depending on the dopant concentration, similar to the lattice parameter and crystallite size. While the synthesized powders have a sponge-like morphology, they exhibit different morphological structures depending on the dopant concentration when converted into thin films.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

Effect of Crystallite Size on the Optical and Structural Properties of Gadolinium-Doped Zinc Oxide

2016 ◽  
Vol 1133 ◽  
pp. 414-418 ◽  
Author(s):  
Nurul Fadzilah Ab Rasid ◽  
Siti Nooraya Mohd Tawil ◽  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Diluted Magnetic Semiconductor ◽  
Sol Gel ◽  
Magnetic Semiconductor ◽  
Band Gap Energy ◽  
Optical Investigation ◽  
Glass Substrates ◽  
Coating Method ◽  
Diluted Magnetic

Rare earth Gd-doped ZnO thin films were prepared by a simple sol-gel spin coating method in order to search for a new functional diluted magnetic semiconductor for potential application in spintronics. The thin films were deposited onto glass substrates with zinc acetate dehydrate, monoethanolamine and 2-methoxyethanol as a starting material, stabilizer and solvent, respectively. The dopant percentage was increased up to 8%. Optical investigation showed that the crystallinity of the thin films was changing due to the increase of the Gd concentrations and optical band gap energy (Eg) value was estimated to be around 3.12 ~ 3.28 eV using Tauc's model. The crystallite size determined from XRD spectra and the results was found that the value is in the range of 14.42 ~ 21.98 nm.

Preparation and Characterization of Tungsten Trioxide (WO3) Thin Films

2013 ◽  
Vol 678 ◽  
pp. 32-36 ◽  
Author(s):  
Raveendran Lavanya ◽  
Gandhimathinathan Saroja ◽  
Veerapandy Vasu
Keyword(s):  
Thin Films ◽  
Electron Beam Evaporation ◽  
Glass Substrates ◽  
Heat Treated ◽  
Electron Beam Evaporation Technique ◽  
Different Temperatures ◽  
Evaporation Technique ◽  
Crystalline Nature ◽  
Wo3 Thin Films

The thin films of WO3were prepared on cleaned microscopic glass substrates by the electron beam evaporation technique. The films were coated at room temperature using pure WO3pellets as source. The prepared films were further post heat treated at different temperatures (100°C to 350°C) for about 1hr in air. The optical properties of WO3 thin films were studied in detail. The increase in the density of the film as the annealing temperature increases have been confirmed by the transmittance spectra. The film annealed at 250°C shows a strong photoluminescence peak. The peak intensity is found to be less for all other temperature. The observed results were discussed in terms of crystalline nature of WO3.

Microstructure Study on Cuprous Oxide Thin Films Deposited on n-Si Substrate via Sol-Gel Spin Coating Technique

2014 ◽  
Vol 803 ◽  
pp. 362-366 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Norainiza Saud ◽  
Haiza Haroon
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Cuprous Oxide ◽  
Sol Gel ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Oxide Thin Films ◽  
Surface Morphologies ◽  
Absorption Technique

Cuprous oxide thin films were prepared by sol-gel method was successfully deposited onto n-Si substrate. Sol solutions were prepared by dissolving copper (II) acetate in isopropyl alcohol. Diethanolamine and glucopone were added into the sol solution to dissolve the copper (II) acetate rapidly to prevent the precipitation of blue copper (II) acetate. Crystalline phases are identified by X-ray diffraction (XRD) and the crystallite size is estimated by using Scherrer’s formula which indicates that the largest crystallite size is 41.84 nm with the lowest lattice parameter 4.25 Å. The optical band gap of the films is determined by optical absorption technique and the surface morphologies of films are analyzed by scanning electron microscopy (SEM). The SEM micrographs show that the particles agglomerate with different shapes and sizes.

Influence of Annealing Temperature on the Properties of Nanostructure ITO Thin Films Prepared by Ion-Assisted Electron Beam Evaporation

2008 ◽  
Vol 55-57 ◽  
pp. 373-376
Author(s):  
Artorn Pokaipisit ◽  
M. Horprathum ◽  
Pichet Limsuwan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Surface Morphology ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Visible Range ◽  
Glass Substrates ◽  
Ito Thin Films

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 oC. At 350 oC, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 W-cm was obtained at a temperature of 350 oC.

High Transmission and Low Resistivity Cadmium Tin Oxide Thin Films Deposited by Sol-Gel

2014 ◽  
Vol 1675 ◽  
pp. 151-156 ◽  
Author(s):  
Carolina. J. Diliegros Godines ◽  
Rebeca Castanedo Pérez ◽  
Gerardo Torres Delgado ◽  
Orlando Zelaya Ángel
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Corning Glass ◽  
Vacuum Atmosphere ◽  
Xrd Patterns ◽  
Quartz Substrates

ABSTRACTTransparent conducting cadmium tin oxide (CTO) thin films were obtained from a mixture of CdO and SnO2 precursor solutions by the dip-coating sol-gel technique. The thin films studied in this work were made with 7 coats (∼200 nm) on corning glass and quartz substrates. Each coating was deposited at a withdrawal speed of 2 cm/min, dried at 100°C for 1 hour and then sintered at 550°C for 1 hour in air. In order to decrease the resistivity values of the films, these were annealed in a vacuum atmosphere and another set of films were annealed in an Ar/CdS atmosphere. The annealing temperatures (Ta) were 450°C, 500°C and 550°C, as well as 600°C and 650°C, when corning glass and quartz substrates were used, respectively. X-Ray diffraction (XRD) patterns of the films annealed in a vacuum showed that there is only the presence of CTO crystals for 450°C≤ Ta ≤ 600°C and CTO+SnO2 crystals for Ta=650°C. The films annealed in Ar/CdS atmosphere were only constituted of CTO crystals independent of the Ta. The minimum resistivity value obtained was ∼4 x 10-4 Ωcm (Rsheet= 20 Ω/□) for the films deposited on quartz and annealed at Ta=600°C under an Ar/CdS atmosphere. The films deposited on quartz showed the higher optical transmission (∼90%) with respect to the films deposited on corning glass substrates (∼85%) in the Uv-vis region. For their optical and electrical characteristics, these films are good candidates as transparent electrodes in solar cells.

Structure and Optical Properties of Nanocrystalline Yttria Doped Ceria Thin Films

1998 ◽  
Vol 12 (15) ◽  
pp. 1573-1583 ◽  
Author(s):  
A. Hartridge ◽  
M. Ghanashyam Krishna ◽  
A. K. Bhattacharya
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Sol Gel ◽  
Doped Ceria ◽  
Optical Losses ◽  
Glass Substrates ◽  
A Value ◽  
Free Region ◽  
Yttria Doped Ceria

Thin films of Ce 1-x Y x O 2-y where x ranges from 0 to 0.5 have been coated onto glass substrates using an inorganic sol–gel approach at low temperature. The lattice parameters from powder diffraction measurements were calculated and shown to be very close to those previously reported. Crystallite size measurements indicated that the films were nanocrystalline, the size decreasing as a function of dopant concentration. The films are transparent in the region 500 to 1500 nm with very low optical losses. The film refractive index is dependent on the dopant concentration and peaks at an yttria concentration of x=0.25 after treatment at 450° C , with a value of 1.79, which on increasing the yttria concentration to x=0.50 decreases to 1.65 in the dispersion free region. The optical band gap is also dependent on the dopant concentration and is in the range 3.2 to 3.0 eV.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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