Innovative fault isolation analysis technique to identify failure mechanism on recovering device failure

2016 ◽  
Author(s):  
Izhar Helmi Ahmad ◽  
Anton Van Alferez ◽  
Yusnani Muhamad Yusof
Keyword(s):  
Failure Mechanism ◽  
Fault Isolation ◽  
Device Failure ◽  
Analysis Technique

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Case Study Failure Analysis of an Ultra-High Vacuum Enclosure Made of a Silicon Chip and Borosilicate Glass for the Cold Atom Laboratory

2017 ◽  
Author(s):  
Gil Garteiz ◽  
Javeck Verdugo ◽  
David Aveline ◽  
Eric Williams ◽  
Arvid Croonquist ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Borosilicate Glass ◽  
High Vacuum ◽  
Cold Atom ◽  
Fault Isolation ◽  
Ultra High Vacuum ◽  
Liquid Bath

Abstract In this paper, a failure analysis case study on a custom-built vacuum enclosure is presented. The enclosure’s unique construction and project requirement to preserve the maximum number of units for potential future use in space necessitated a fluorocarbon liquid bath for fault isolation and meticulous sample preparation to preserve the failure mechanism during failure analysis.

Advanced CMOS Device Fault Isolation Using Frequency Mapping on Passive Structures

2013 ◽  
Author(s):  
S.H. Goh ◽  
B.L. Yeoh ◽  
G.F. You ◽  
W.H. Hung ◽  
Jeffrey Lam ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Device Failure ◽  
Functional Failure ◽  
Technology Node ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Scan Chains

Abstract Backside frequency mapping on modulating active in transistors is well established for defect localization on broken scan chains. Recent experiments have proven the existence of frequency signals from passive structures modulations. In this paper, we demonstrate the effectiveness of this technique on a 65 nm technology node device failure. A resistive leaky path leading to a functional failure which, otherwise cannot be isolated using dynamic emission microscopy, is localized in this work to guide follow on failure analysis.

Fault Isolation of Large Nets Using Bridging Fault Analysis

2004 ◽  
Author(s):  
George Ontko
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Fault Analysis ◽  
Fault Isolation ◽  
Bridging Faults ◽  
Bridging Fault

Abstract Bridging faults are a common failure mechanism in integrated circuits and scan-based diagnosis does a good job of isolating these defects. Diagnosis, however, can sometimes result in large search areas. Typically, these areas are caused by long repeater nets. When this happens, physical failure analysis will become difficult or impossible. This paper concerns itself with using a bridging fault analysis as a means of reducing these large search areas.

Innovative Application of a Passive Device Failure Analysis Technique to a JFET

1998 ◽  
Author(s):  
J.J. Erickson ◽  
M.J. Ditz
Keyword(s):  
Failure Analysis ◽  
Bonding Pressure ◽  
Device Failure ◽  
Passive Device ◽  
Exact Location ◽  
Copper Electroplating ◽  
Analysis Technique ◽  
Bond Wire ◽  
Tantalum Capacitor

Abstract A technique normally used for the analysis of tantalum capacitor failures was successfully applied to a JFET. The JFET had a short from the source to the gate. The short was located at the source bond pad and had resulted from a combination of the use of too large a bond wire and excessive bonding pressure. The exact location of the site of the short was successfully determined by using a copper electroplating technique typically used for locating shorts or leakage sites on the tantalum slug of a tantalum capacitor.

Verification of DLS Data by LVP in Case of Marginal Failure

2016 ◽  
Author(s):  
Keonil Kim ◽  
Sungjin Kim ◽  
Kunjae Lee ◽  
Kyeongju Jin ◽  
Yunwoo Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Fault Location ◽  
Photon Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
The Real ◽  
Defect Isolation ◽  
The Relationship ◽  
Non Destructive

Abstract In most of the non-destructive electrical fault isolation cases, techniques such as DLS, Photon Emission, LIT, OBIRCH indicate a fault location directly. But relying on just one of these techniques for marginal failure mechanism is not enough for better fault localization. When Failure Analysis (FA) engineers encounter high NDF (No Defect Found) rates, by using only one of the techniques, they may need to consider the relationship between the responded locations by different techniques and fail phenomenon for better defect isolation. This paper talks about how a responded DLS location does not always indicate a fault location and how LVP data collected using DLS location can pin point the real defect location.

Single Device Characterization by Nano-probing to Identify Failure Root Cause

2005 ◽  
Author(s):  
Chao-Chi Wu ◽  
Jon C. Lee ◽  
Jung-Hsiang Chuang ◽  
Tsung-Te Li
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Failure Mechanism ◽  
Fault Isolation ◽  
Device Characterization ◽  
Nano Technology ◽  
Analysis Techniques ◽  
Root Cause ◽  
Visual Defects ◽  
Lower Success Rate

Abstract In general failure analysis cases, a less invasive fault isolation approach can be utilized to resolve a visual root cause defect. In the case of nano technology, visual defects are not readily resolved, due to an increase in non-visible defects. The nonvisible defects result in a lower success rate since conventional FA methods/tools are not efficient in identifying the failure root cause. For the advanced nanometer process, this phenomenon is becoming more common; therefore the utilization of advanced techniques are required to get more evidence to resolve the failure mechanism. The use of nanoprobe technology enables advanced device characterization h order to obtain more clues to the possible failure mechanism before utilizing the traditional physical failure analysis techniques.

Practicality of Single Microscope Failure Analysis for Fault Isolation, Analysis, and Advanced TEM Sample Preparation by the Integration EBAC and EDS on FIBSEM

2017 ◽  
Author(s):  
John Lindsay ◽  
James Sagar ◽  
James Holland ◽  
Jenny Goulden
Keyword(s):  
Chemical Analysis ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Fault Identification ◽  
X Rays ◽  
Multiple Systems ◽  
Device Failure ◽  
X Ray ◽  
Analysis Workflow ◽  
Complete Failure

Abstract Device failure analysis typically requires multiple systems for fault identification, preparation and analysis. In this paper we discuss the practicalities and limits of using a single FIBSEM system for a complete failure analysis workflow. The theoretical requirements of using a nanomanipulator for both lamella lift out and electrical testing are discussed and the current capabilities of windowless X-rays detectors for chemical analysis demonstrated. When the required resolution for failure analysis exceed the limits of a FIBSEM and TEM is required, the combination of the nanomanipulator and X-ray detector for advanced lift out and thickness controlled thinning techniques are demonstrated to prepare exceptional quality lamellae.

Application of Electro Optical Terahertz Pulse Reflectometry for Fault Localization and Defect Analysis

2017 ◽  
Author(s):  
Yi-Sheng Lin ◽  
Yu-Hsiang Hsiao ◽  
Shu-Hua Lee
Keyword(s):  
Failure Analysis ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Defect Analysis ◽  
Wafer Level ◽  
Terahertz Pulse ◽  
Electrical Failure ◽  
Analysis Technique ◽  
Destructive Analysis ◽  
Non Destructive

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR) is an E-FA (Electrical Failure Analysis) technique in the semiconductor industry for non-destructive electrical fault isolation for shorts, leakages and opens. This paper introduces the capability and presents several case studies identifying the physical location of defects where EOTPR is useful as a non-destructive analysis technique. In this paper, the methodology and application of EOTPR on open and short failure isolations in advanced 2.5D IC and wafer level packages (WLP) have been presented. The experimental results of P-FA (Physical Failure Analysis) verify the accuracy of the EOTPR system in determining the distance to defect.

Sign in / Sign up

Export Citation Format

Share Document