High-performance low-power magnetic tunnel junction based non-volatile flip-flop

2014 ◽  
Author(s):  
Taehui Na ◽  
Kyungho Ryu ◽  
Jisu Kim ◽  
Seong-Ook Jung ◽  
Jung Pill Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Tunnel Junction ◽  
High Performance ◽  
Magnetic Tunnel Junction ◽  
Flip Flop

CHALLENGE OF MTJ-BASED NONVOLATILE LOGIC-IN-MEMORY ARCHITECTURE FOR DARK-SILICON LOGIC LSI

SPIN ◽  
2013 ◽  
Vol 03 (04) ◽  
pp. 1340014 ◽  
Author(s):  
TAKAHIRO HANYU
Keyword(s):  
Low Power ◽  
Performance Improvement ◽  
Tunnel Junction ◽  
High Performance ◽  
Magnetic Tunnel Junction ◽  
Memory Architecture ◽  
Dark Silicon ◽  
Ultra Low Power ◽  
Power Wall ◽  
Low Power Logic

This paper presents an architecture-level approach, called nonvolatile logic-in-memory (NV-LIM) architecture, to solving performance-wall and power-wall problems in the present CMOS-only-based logic-LSI (Large-Scaled Integration) processors. The use of magnetic tunnel junction devices combined with a CMOS-gate style makes it possible to achieve a high-performance and ultra-low-power logic LSI. Some concrete examples using the proposed method allow you to achieve the desired performance improvement compared to a corresponding CMOS-only-based realization.

A Reliable, Low Power and Nonvolatile MTJ-Based Flip-Flop for Advanced Nanoelectronics

2018 ◽  
Vol 27 (13) ◽  
pp. 1850205 ◽  
Author(s):  
Ramin Rajaei
Keyword(s):  
Low Power ◽  
Integrated Circuit ◽  
High Performance ◽  
Radiation Effects ◽  
Large Scale ◽  
Vlsi Design ◽  
Magnetic Tunnel Junction ◽  
Cmos Technology ◽  
Flip Flop ◽  
Reliability Challenge

Very large-scale integrated circuit (VLSI) design faces many challenges with today’s nanometer CMOS technology, including leakage current and reliability issues. Magnetic tunnel junction (MTJ) hybrid with CMOS transistors can offer many advantages for future VLSI design such as high performance, low power consumption, easy integration with CMOS and also nonvolatility. However, MTJ-based logic circuits suffer from a reliability challenge that is the read disturbance issue. This paper proposes a new nonvolatile magnetic flip-flop (MFF) that offers a disturbance-free sensing and a low power write operation over the previous MFFs. This magnetic-based logic circuit is based on the previous two-in-one (TIO) MTJ cell that presents the aforementioned attributes. Radiation-induced single event upset, as another reliability challenge, is also taken into consideration for the MFFs and another MFF robust against radiation effects is suggested and evaluated.

scholarly journals Low Power based Dynamic TSPC D flip flop for High Performance Applications

2020 ◽  
Vol 9 (8) ◽  
pp. 758-762
Keyword(s):  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Memory Cell ◽  
Research Center ◽  
Short Channel ◽  
Flip Flop ◽  
Force Application ◽  
Effect Transistor

D flip-flop is viewed as the most basic memory cell in by far most of computerized circuits, which brings it broad usage, particularly under current conditions where high-thickness pipeline innovation is as often as possible utilized in advanced coordinated circuits and flip-flop modules are key segments. As a constant research center, various sorts of zero flip-flops have been concocted and explored, and the ongoing exploration pattern has gone to rapid low-control execution, which can be come down to low power-defer item. To actualize superior VLSI, picking the most proper D flip-flop has clearly become an incredibly huge part in the structure stream. The quick headway in semiconductor innovation made it practicable to coordinate entire electronic framework on a solitary chip. CMOS innovation is the most doable semiconductor innovation yet it neglects to proceed according to desires past and at 32nm innovation hub because of the short channel impacts. GNRFET is Graphene Nano Ribbon Field Effect Transistor, it is seen that GNRFET is a promising substitute for low force application for its better grasp over the channel. In this paper, an audit on Dynamic Flip Flop and GNRFET is introduced. The power is improved in the proposed circuit for the D flip flop TSPC.

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

scholarly journals A Glitch-Free Novel DET-FF in 22 nm CMOS for Low-Power Application

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Sumitra Singar ◽  
N. K. Joshi ◽  
P. K. Ghosh
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Performance ◽  
Vlsi Design ◽  
Total System ◽  
Clock Frequency ◽  
Flip Flop ◽  
Digital Vlsi ◽  
Feedback Structure ◽  
Power Application

Dual edge triggered (DET) techniques are most liked choice for the researchers in the field of digital VLSI design because of its high-performance and low-power consumption standard. Dual edge triggered techniques give the similar throughput at half of the clock frequency as compared to the single edge triggered (SET) techniques. Dual edge triggered techniques can reduce the 50% power consumption and increase the total system power savings. The low-power glitch-free novel dual edge triggered flip-flop (DET-FF) design is proposed in this paper. Still now, existing DET-FF designs are constructed by using either C-element circuit or 1P-2N structure or 2P-1N structure, but the proposed novel design is designed by using the combination of C-element circuit and 2P-1N structure. In this design, if any glitch affects one of the structures, then it is nullified by the other structure. To control the input loading, the two circuits are merged to share the transistors connected to the input. In the proposed design, we have used an internal dual feedback structure. The proposed design reduces the delay and power consumption and increases the speed and efficiency of the system.

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