Effects of Prestrain Applied to a Polyethylene Terephthalate Substrate Before the Coating of Al-Doped ZnO Film on Film Quality, Electrical Properties, and Pop-In Behavior During Nanoindentation

2012 ◽  
Vol 21 (5) ◽  
pp. 1059-1070 ◽  
Author(s):  
Tse-Chang Li ◽  
Chang-Fu Han ◽  
Bo-Hsiung Wu ◽  
Po-Tsung Hsieh ◽  
Jen-Fin Lin
Keyword(s):  
Electrical Properties ◽  
Polyethylene Terephthalate ◽  
Zno Film ◽  
Doped Zno ◽  
Polyethylene Terephthalate Substrate

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

Pretreatment of Polyethylene Terephthalate Substrate for the Growth of Ga-Doped ZnO Thin Film

2011 ◽  
Vol 11 (2) ◽  
pp. 1617-1620 ◽  
Author(s):  
D. W. Kim ◽  
J.-H. Kang ◽  
Y. S. Lim ◽  
M.-H. Lee ◽  
W.-S. Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyethylene Terephthalate ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Polyethylene Terephthalate Substrate

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

2012 ◽  
Vol 1494 ◽  
pp. 133-138 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Zno Film ◽  
Al Content ◽  
Heavily Doped ◽  
Doped Zno

ABSTRACTIn this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

2015 ◽  
Vol 1120-1121 ◽  
pp. 429-434 ◽  
Author(s):  
Dan Dan Wang ◽  
Qing Qing Fang ◽  
Jing Jing Yang
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Electric Transport ◽  
Zno Film ◽  
Doped Zno

The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility,ν, and resistivity,ρ, after doped Cu. It can be found that theνdecreased from to and theρincreased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.

Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films

2006 ◽  
Vol 301 ◽  
pp. 71-74 ◽  
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Dai Nezaki ◽  
Mitsuhiro Okamoto ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Linear Behavior ◽  
Doped Zno ◽  
Er Doped

Er-doped ZnO thin films which emitted intense infrared light in the vicinity of 1.5 μm were investigated from points of view of the microstructure and electrical properties. The result of X-ray diffraction (XRD) pattern revealed that the crystal lattice of ZnO was apparently expanded by doping of Er ions. Electrical resistance in the direction of thickness of Er-doped ZnO film showed linear behavior, which was resemble to that of undoped ZnO film. Infrared light emission phenomenon of the film was related to the chemical / physical state of Er ions in ZnO matrix.

Sign in / Sign up

Export Citation Format

Share Document