High Speed Digital Receivers for Electronic Warfare Applications

2006 ◽  
Author(s):  
Mike Groden ◽  
Lamberto Raffaelli
Keyword(s):  
High Speed ◽  
Electronic Warfare ◽  
Digital Receivers

Discrete Electronic Warfare Signal Processing using Compressed Sensing Based on Random Modulator Pre-Integrator

2015 ◽  
Vol 65 (6) ◽  
pp. 472 ◽  
Author(s):  
M. Sreenivasa Rao ◽  
Chandan C. Mishra ◽  
K. Krishna Naik ◽  
K. Maheshwara Reddy
Keyword(s):  
Signal Processing ◽  
Input Signal ◽  
High Speed ◽  
Traditional Approach ◽  
Ultra Wideband ◽  
Radar Signal ◽  
Electromagnetic Spectrum ◽  
Electronic Warfare ◽  
High Speed Adc ◽  
Detection Of Signals

Electronic warfare receiver works in the wide electromagnetic spectrum in dense radar signal environment. Current trends in radar systems are ultra wideband and low probability of intercept radar technology. Detection of signals from various radar stations is a concern. Performance and probability of intercept are mainly dependent on high speed ADC technology. The sampling and reconstruction functions have to be optimized to capture incoming signals at the receiver to extract characteristics of the radar signal. The compressive sampling of the input signal with orthonormal base vectors, projecting the basis in the union of subspaces and recovery through convex optimisation techniques is the current traditional approach. Modern trends in signal processing suggest the random modulator pre-integrator (RMPI), which sample the input signal at information rate non-adaptively and recovery by the processing of discrete and finite vectors. Analysis of RMPI theory, application to EW receiver, simulation and recovery of EW receiver signals are discussed.

HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY

2003 ◽  
Vol 13 (01) ◽  
pp. 221-237
Author(s):  
KARL E. FRITZ ◽  
BARBARA A. RANDALL ◽  
GREGG J. FOKKEN ◽  
MICHAEL J. DEGERSTROM ◽  
MICHAEL J. LORSUNG ◽  
...  
Keyword(s):  
Low Power ◽  
Analog Circuits ◽  
Integrated Circuit ◽  
Silicon Germanium ◽  
High Speed ◽  
Digital Signal ◽  
Electronic Warfare ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Military Systems

Under the auspices of Defense Advanced Research Project Agency's Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, the Mayo Foundation Special Purpose Processor Development Group is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being studied include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology, simulations and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS 5HP (50 GHz fT HBTs with 0.5 μm CMOS) and 7HP (120 GHz fT HBTs with 0.18 μm CMOS) technologies will be presented.

A review of radar signals in terms of Doppler tolerance, time-sidelobe level, and immunity against jamming

2018 ◽  
Vol 10 (10) ◽  
pp. 1134-1142 ◽  
Author(s):  
Samer Baher Safa Hanbali
Keyword(s):  
High Speed ◽  
Pulse Compression ◽  
Power Transmission ◽  
Short Pulse ◽  
Radar Signal ◽  
Sidelobe Level ◽  
Compression Technique ◽  
Electronic Warfare ◽  
Tolerance Time ◽  
Radar Signals

AbstractPulse compression technique allows a radar to achieve the resolution of a short pulse and the energy of a long pulse simultaneously, without the requirement of high-power transmission. Therefore, pulse compression radars have a low probability of intercept capability. The common types of pulse compression signals are frequency modulated waveforms and phase-coded waveforms, which have different properties. The optimum radar signal should have good immunity against deceptive jamming, good Doppler tolerance to detect high-speed targets, and low time-sidelobe level to detect weak targets nearby the strong ones. This paper reviews the current research in the commonly used radar signals, and presents their pros and cons, and compares between them in terms of Doppler tolerance, time-sidelobe level, as well as immunity against jamming in order to provide a reference for the researchers in the field of radar systems and electronic warfare.

High-Speed Comparator Design for RF-to-Digital Receivers

2020 ◽  
Author(s):  
Ahmed Sakr ◽  
Aziza I. Hussein ◽  
Ghazal A. Fahmy ◽  
Mahmoud A. Abdelghany
Keyword(s):  
High Speed ◽  
Digital Receivers

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Scanning x-ray fluorescence microscopy and principal component analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1752-1753
Author(s):  
Brian Cross
Keyword(s):  
Principal Component Analysis ◽  
Fluorescence Microscopy ◽  
Spatial Resolution ◽  
High Speed ◽  
Image Acquisition ◽  
Principal Component ◽  
Fluorescence Microscope ◽  
Acquisition Rate ◽  
X Ray ◽  
Speed Up

A relatively new entry, in the field of microscopy, is the Scanning X-Ray Fluorescence Microscope (SXRFM). Using this type of instrument (e.g. Kevex Omicron X-ray Microprobe), one can obtain multiple elemental x-ray images, from the analysis of materials which show heterogeneity. The SXRFM obtains images by collimating an x-ray beam (e.g. 100 μm diameter), and then scanning the sample with a high-speed x-y stage. To speed up the image acquisition, data is acquired "on-the-fly" by slew-scanning the stage along the x-axis, like a TV or SEM scan. To reduce the overhead from "fly-back," the images can be acquired by bi-directional scanning of the x-axis. This results in very little overhead with the re-positioning of the sample stage. The image acquisition rate is dominated by the x-ray acquisition rate. Therefore, the total x-ray image acquisition rate, using the SXRFM, is very comparable to an SEM. Although the x-ray spatial resolution of the SXRFM is worse than an SEM (say 100 vs. 2 μm), there are several other advantages.

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