Displacement effects induced by high energy protons in semiconductor electronic devices

2002 ◽  
Author(s):  
J. Buisson ◽  
R. Gaillard ◽  
J.-C. Jaureguy ◽  
G. Poirault
Keyword(s):  
Electronic Devices ◽  
High Energy ◽  
Semiconductor Electronic ◽  
Displacement Effects

scholarly journals Two-dimensional inorganic molecular crystals

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Wei Han ◽  
Pu Huang ◽  
Liang Li ◽  
Fakun Wang ◽  
Peng Luo ◽  
...  
Keyword(s):  
Organic Molecules ◽  
Electronic Devices ◽  
Molecular Crystals ◽  
High Energy ◽  
Two Dimensional ◽  
Β Phase ◽  
Α Phase ◽  
Growth Plane ◽  
Transmission Electron

Abstract Two-dimensional molecular crystals, consisting of zero-dimensional molecules, are very appealing due to their novel physical properties. However, they are mostly limited to organic molecules. The synthesis of inorganic version of two-dimensional molecular crystals is still a challenge due to the difficulties in controlling the crystal phase and growth plane. Here, we design a passivator-assisted vapor deposition method for the growth of two-dimensional Sb2O3 inorganic molecular crystals as thin as monolayer. The passivator can prevent the heterophase nucleation and suppress the growth of low-energy planes, and enable the molecule-by-molecule lateral growth along high-energy planes. Using Raman spectroscopy and in situ transmission electron microscopy, we show that the insulating α-phase of Sb2O3 flakes can be transformed into semiconducting β-phase under heat and electron-beam irradiation. Our findings can be extended to the controlled growth of other two-dimensional inorganic molecular crystals and open up opportunities for potential molecular electronic devices.

scholarly journals Protective Effect of the Aqueous Extract of Deschampsia antarctica (EDAFENCE®) on Skin Cells against Blue Light Emitted from Digital Devices

2020 ◽  
Vol 21 (3) ◽  
pp. 988 ◽  
Author(s):  
Silvia Lorrio ◽  
Azahara Rodríguez-Luna ◽  
Pablo Delgado-Wicke ◽  
Marta Mascaraque ◽  
María Gallego ◽  
...  
Keyword(s):  
Oxidative Stress ◽  
Signaling Pathway ◽  
Blue Light ◽  
Aqueous Extract ◽  
Electronic Devices ◽  
High Energy ◽  
Dermal Fibroblasts ◽  
Light Irradiation ◽  
Deschampsia Antarctica ◽  
Pathway Activation

Skin is being increasingly exposed to artificial blue light due to the extensive use of electronic devices. This, together with recent observations reporting that blue light—also known as high-energy visible light—can exert cytotoxic effects associated with oxidative stress and promote hyperpigmentation, has sparked interest in blue light and its potential harmful effects on skin. The photoprotective properties of new extracts of different botanicals with antioxidant activity are therefore being studied. Deschampsia antarctica (Edafence®, EDA), a natural aqueous extract, has shown keratinocyte and fibroblast cell protection effects against ultraviolet radiation and dioxin toxicity. In this regard, we studied the protective capacity of EDA against the deleterious effects of artificial blue light irradiation in human dermal fibroblasts (HDF) and melanocytes. We analyzed the impact of EDA on viability, cell morphology, oxidative stress, melanogenic signaling pathway activation and hyperpigmentation in HDF and melanocytes subjected to artificial blue light irradiation. Our results show that EDA protects against cell damage caused by artificial blue light, decreasing oxidative stress, melanogenic signaling pathway activation and hyperpigmentation caused by blue light irradiation. All these findings suggest that EDA might help prevent skin damage produced by artificial blue light exposure from screen of electronic devices.

Silicon Material Growth for Nuclear Radiation Detectors

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen
Keyword(s):  
Electronic Devices ◽  
Base Material ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors ◽  
X Ray ◽  
Nuclear Radiation Detectors

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.

scholarly journals Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

2008 ◽  
Vol 25 (9) ◽  
pp. 3378-3380 ◽  
Author(s):  
Xiong Guang-Cheng ◽  
Chen Yuan-Sha ◽  
Chen Li-Ping ◽  
Lian Gui-Jun
Keyword(s):  
Electronic Devices ◽  
Hetero Structure ◽  
Semiconductor Electronic

Performance of electronic devices submitted to X-rays and high energy proton beams

2012 ◽  
Vol 273 ◽  
pp. 135-138 ◽  
Author(s):  
M.A.G. Silveira ◽  
K.H. Cirne ◽  
R.B.B. Santos ◽  
S.P. Gimenez ◽  
N.H. Medina ◽  
...  
Keyword(s):  
Electronic Devices ◽  
High Energy ◽  
X Rays ◽  
High Energy Proton ◽  
Proton Beams ◽  
Energy Proton

Current Development of Key Materials for Low Temperature Fuel Cells

2017 ◽  
Vol 727 ◽  
pp. 670-677 ◽  
Author(s):  
Jun Zhang ◽  
Ying Li Zhu ◽  
Gang Qi ◽  
Jian Yu Li
Keyword(s):  
Fuel Cells ◽  
Low Temperature ◽  
Electrode Materials ◽  
Electronic Devices ◽  
High Energy ◽  
High Energy Density ◽  
Current Status ◽  
Environment Friendly ◽  
Energy Conversion Systems ◽  
Low Temperature Fuel Cells

Low temperature fuel cells are promising environment-friendly energy conversion systems with high energy density and efficiency to be used as components of electronic devices for stationary and portable applications. In this paper, the key materials of the three types low temperature fuel cells are introduced, and the most recent advances related to the key materials and their character are reviewed. The current status of materials for electrolyte, catalyst and electrode materials is focused on.

Synthesize CCTO Using Different Mixing Media

2016 ◽  
Vol 840 ◽  
pp. 87-90 ◽  
Author(s):  
Rosyaini Afindi Zaman ◽  
Mohamad Johari Abu ◽  
Saniah Abdul Karim ◽  
Julie Juliewatty Mohamed ◽  
Mohd Fadzil Ain ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Electronic Devices ◽  
Sol Gel ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Dielectric Ceramic ◽  
Wide Range ◽  
High Dielectric

In recent years, there has been an increasing interest on high dielectric constant that have significant applications in electronic devices. Dielectric materials have many technological applications such as capacitors, resonators and filters. High dielectric ceramic capacitors based perovskite oxides are necessary for modern electronic devices and are found to be suitable for a wide range of applications. Subramanian et al. discovered the high dielectric constant of CaCu3Ti4O12 (CCTO) ~ 10,000 at room temperature. CCTO has the cubic perovskite crystal structure and high dielectric constant of ~ 104 up to 105 at radio frequency and good temperature stability over a wide temperature range [1,2]. These properties were desired for various microelectronic applications. With the high dielectric constant, the material can store more charge and the values make CCTO an attractive material for ultra-high energy density capacitors. However, this properties can be accomplished if single phase of CCTO is formed. Many research have been done recently on the synthesis of the cubic perovskite CCTO and many techniques are working such as sol-gel route [3], combustion techniques [4], molten salt process [5] and etc., but this technique is difficult and complex process during sample preparation.

Ballistic Heat Transfer Modelling in Semiconductor Electronic Devices: A Modified Fourier-Based Approach

2010 ◽  
Author(s):  
Aydin Nabovati ◽  
Daniel P. Sellan ◽  
Cristina H. Amon
Keyword(s):  
Electronic Devices ◽  
Mean Free Path ◽  
Characteristic Size ◽  
Fourier Law ◽  
Transport Models ◽  
Size Dependent ◽  
Semiconductor Electronic ◽  
Ballistic Heat Transfer ◽  
The Mean ◽  
Boltzmann Method

It is well known that continuum-based thermal transport models, such as the Fourier law, fail when the characteristic size of a system becomes comparable to the mean free path of carriers that transport thermal energy. The current work uses the lattice Boltzmann method to develop two modifications to the Fourier heat equation so that it can capture sub-continuum effects. The two modifications are: (i) a size-dependent thermal conductivity and (ii) a size-dependent temperature jump at the system boundaries.

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