High-speed spectrometer based on a silicon CCD-array matrix for transient changes measuring in optical radiation spectra

2021 ◽  
Author(s):  
T. I. Minibaev ◽  
D. S. Ukolov ◽  
R. K. Mozhaev ◽  
A. Yu. Nikiforov
Keyword(s):  
High Speed ◽  
Optical Radiation ◽  
Radiation Spectra ◽  
Ccd Array

scholarly journals Optoelectronic rotary connector for data transmission

2020 ◽  
Vol 69 (2) ◽  
pp. 117-127
Author(s):  
Tadeusz Drozd ◽  
Marcin Jakubaszek ◽  
Marek Zygmunt ◽  
Roman Niedzielski
Keyword(s):  
Data Transmission ◽  
High Speed ◽  
Optical Radiation ◽  
Optical Data ◽  
Transmission Modes ◽  
Long Life ◽  
Mechanical Components ◽  
Technical Solutions

Many technical solutions require the transmission of data between rotating parts. The article presents a data transmission solution based on an optoelectronic rotary connector. The optoelectronic connector is characterised by high speed of data transmission and long life of the mechanical components, with the choice of synchronous and asynchronous data transmission modes. Keywords: optoelectronic rotary connector, optical data transmission, detection of optical radiation

Multiport-Readout Frame-Transfer 5 Megapixel CCD Digital System for IVEM Applications

1999 ◽  
Vol 5 (S2) ◽  
pp. 364-365
Author(s):  
G.Y. Fan ◽  
S. Peltier ◽  
S. Lamont ◽  
S.J. Young ◽  
Dana G. Dunkelberger ◽  
...  
Keyword(s):  
High Speed ◽  
Imaging System ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Ccd Sensor ◽  
Ccd Array ◽  
Current Implementation ◽  
Control Electronics ◽  
On Chip ◽  
And Control

A multiport-readout, frame-transfer charge coupled device (CCD) digital imaging system has been successfully constructed and tested for intermediate-high voltage electron microscopy (IVEM) applications up to 400 keV. The system employs a back-thinned CCD, made by MIT Lincoln laboratories, that comprises 2560 × 1960 pixels and a pixel size of 24 μm × 24 μm. With a frame transfer design, the imager fills nearly the entire usable area of a 100 mm-diameter silicon wafer (FIG. 1). In the current implementation, four of the eight on-chip readout ports are utilized in parallel each operating at a pixel rate of 1 or 2 MHz so that the entire CCD array can be read out in as short as ∼0.6 seconds. The frame-transfer readout functions as an electronic shutter which permits the rapid transfer of charges in the active pixels to four light-shielded buffers (FIG. 1) where the charges are readout and digitized while the active area of the CCD is integrating the next frame. At 2 MHz, charge transfer of 980 CCD rows will be completed in under 0.5 ms, which is much shorter than a typical exposure time of a few seconds. The camera head (FIG.2) and control electronics for CCD sensor were packaged by Photometries (Tuscon, Arizona). Two MaxVideo 200 image processing boards from Datacube (Peabody, MA) are used for high speed online imaging processing. The CCD sensor is electronically cooled to ∼ −40°C during operation.

EELS parallel detection using 2-dimensional CCD array

1988 ◽  
Vol 46 ◽  
pp. 662-663
Author(s):  
N.J. Zaluzec ◽  
M. G. Strauss
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
High Speed ◽  
Imaging System ◽  
Ccd Camera ◽  
Electron Spectrometer ◽  
Camera System ◽  
Ccd Array ◽  
Photodiode Arrays ◽  
Electron Energy Loss

Conventional parallel detectors for Electron Energy Loss Spectroscopy (EELS) have been mainly based upon systems using linear photodiode arrays in a conjugate image plane of an electron spectrometer. We have developed a unique two dimensional charge coupled device (CCD) camera system which can be used as a detector for EEL spectroscopy and imaging, utilizing high sensitivity, high resolution CCD's, which are typically used in medial or astronomic imaging.The present detector system is based upon a Tektronics TK512M 512 x 512 pixel CCD array, (figure 1) which is optically coupled to a YAG:Ce single crystal scintillator. This CCD imaging system views an electron energy loss spectrum which is magnified by a quadrupole doublet lens attached to a Gatan 607 electron spectrometer on a Philips EM420 TEM as is illustrated in figure 2. The CCD controller, detector head electronics and electron optics were developed at Argonne specifically for high speed data acquisition and allow the recording of complete spectra in as short a time as 10 μsec or approximately 103 times faster than the typical 1024 pixel photodiode arrays’ thus allowing the potential for time resolved spectroscopy.

DGV’s Accuracy Dependence Upon Laser Beam Intensity Profile

2009 ◽  
Author(s):  
Gerald L. Morrison ◽  
Saikishan Suryanarayanan
Keyword(s):  
Light Intensity ◽  
Laser Beam ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Frequency ◽  
Intensity Profile ◽  
Laser Beam Intensity ◽  
Doppler Shifts ◽  
Ccd Array ◽  
Spatially Varying

A Doppler Global Velocimeter (DGV) system was designed for use in high speed rotating equipment at the Turbomachinery Laboratory. Due to the rapidly varying periodic nature of flows inside turbines, compressors, and pumps, it is desirable to use a pulsed laser as the light source. An ND-YAG laser was selected for use based upon the 9 ns pulse duration and the ability for the laser to operate with a 15 MHz light bandwidth which is tunable to the absorption line filter used in the DGV system. However, when applied to the system it was discovered the DGV system did not work properly. The output of a line CCD array used to monitor the laser frequency was closely scrutinized. The light intensity across the laser beam was not Gaussian in nature but contained a very large amount of “noise”. Since the DGV system measures light intensity variations to infer Doppler shifts and hence velocity distributions, the rapidly spatially varying light intensity across the laser beam was suspected as the cause of the system’s inaccuracy. An analysis to quantify how the laser beam light intensity profile noise affects a DGV system accuracy is performed and possible remedies are suggested.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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