Estimating Power Dissipation through Thermal Measurements in Power Circuits

Author(s):  
A. Fodor ◽  
G. Chindris
2021 ◽  
Author(s):  
Durgesh Addala ◽  
Sanjeet Kumar Sinha ◽  
Gadiparthi Mohan Chandu

Abstract DRAM’s are essential for memory-based electronics devices and the usage of RAM is increasing day by day to reach the user's expectation the products are get designed based on low power and portable. Power dissipation is a major issue to solve this issue researchers are focusing on low power circuits and trying to design the circuits with less number of the transistor so that it will consume less amount of power. In this paper, three structures are presently based on MOSFET technology and CNTFET technology. MOSFET model structures are divided into two they are 1.DRAM circuit with Tri-state buffers and 2. DRAM circuit without Tri-state buffers. CNTFET based structure is built with the help of ‘CarbonNanoTube-FET’s and the structure is the same as DRAM without Tri-state buffers. Power analysis, voltage, delay are evaluated with the help of cadence virtuoso and LTspice Tools.


Author(s):  
Vadim Gektin

The paper parametrically assesses the impact of the voids/delamination on the system thermal performance. Analysis are carried out numerically and validated against experimental data (thermal measurements and C-SAM images). Topics covered include the relationship between voids/delamination and TIMs’ and heat spreader’s effective thermal conductivity; sensitivity of the system thermal performance to void/delamination size and location; voids/delamination impact vs. on the chip power dissipation (uniform vs. non-uniform); comparison of TIM1 vs. TIM2 voids impact; and, finally, comparison of voids vs. delamination.


2010 ◽  
Vol E93-C (12) ◽  
pp. 1670-1678 ◽  
Author(s):  
Ehsan ESFANDIARI ◽  
Norman Bin MARIUN ◽  
Mohammad Hamiruce MARHABAN ◽  
Azmi ZAKARIA

2014 ◽  
Vol 4 (3) ◽  
pp. 9-13
Author(s):  
M. Balaji ◽  
◽  
B. Keerthana ◽  
K. Varun ◽  
◽  
...  

2020 ◽  
Vol 10 (4) ◽  
pp. 534-547
Author(s):  
Chiradeep Mukherjee ◽  
Saradindu Panda ◽  
Asish K. Mukhopadhyay ◽  
Bansibadan Maji

Background: The advancement of VLSI in the application of emerging nanotechnology explores quantum-dot cellular automata (QCA) which has got wide acceptance owing to its ultra-high operating speed, extremely low power dissipation with a considerable reduction in feature size. The QCA architectures are emerging as a potential alternative to the conventional complementary metal oxide semiconductor (CMOS) technology. Experimental: Since the register unit has a crucial role in digital data transfer between the electronic devices, such study leading to the design of cost-efficient and highly reliable QCA register is expected to be a prudent area of research. A thorough survey on the existing literature shows that the generic models of Serial-in Serial Out (SISO), Serial-in-Parallel-Out (SIPO), Parallel-In- Serial-Out (PISO) and Parallel-in-Parallel-Out (PIPO) registers are inadequate in terms of design parameters like effective area, delay, O-Cost, Costα, etc. Results: This work introduces a layered T gate for the design of the D flip flop (LTD unit), which can be broadly used in SISO, SIPO, PISO, and PIPO register designs. For detection and reporting of high susceptible errors and defects at the nanoscale, the reliability and defect tolerant analysis of LTD unit are also carried out in this work. The QCA design metrics for the general register layouts using LTD unit is modeled. Conclusion: Moreover, the cost metrics for the proposed LTD layouts are thoroughly studied to check the functional complexity, fabrication difficulty and irreversible power dissipation of QCA register layouts.


Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.


Sign in / Sign up

Export Citation Format

Share Document