IDD scan test method for fault localization technique on CMOS VLSI failure analysis

2010 ◽  
Author(s):  
Farisal Abdullah ◽  
Nafarizal Nayan ◽  
Muhammad Mahadi Abdul Jamil ◽  
Norfauzi Kamsin
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Test Method ◽  
Localization Technique ◽  
Scan Test ◽  
Cmos Vlsi

Case Studies on Application of Electro Optical Probing (EOP) - A Noninvasive Backside Localization Technique in Failure Analysis

2019 ◽  
Author(s):  
Srinath Rajaram ◽  
Rajesh Kabadi ◽  
Eric Barbian
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Case Studies ◽  
Fault Localization ◽  
Localization Technique ◽  
Localize Failure ◽  
Advanced Packaging ◽  
Optical Probing ◽  
Deposition Techniques ◽  
No Sample Preparation

Abstract Given the challenges FA Engineers have in fault localization, top-side analysis is facing a major challenge with today’s advanced packaging and shrinking of die sizes. At wafer and die level it is relatively easy to probe with little or no sample preparation. Greater challenges occur after the die is packaged. The difficulty further lies in non-destructively analyzing the die. Another issue with failure analysis is accurately deprocessing the device for probe pad deposition. Techniques like Electro Optical Probing (EOP) or Laser Voltage Probing (LVP) acquire electrical signals on transistors and create an activity map of the circuitry. In failure analysis, it is applied to localize defects. This paper discusses integrating EOP techniques in traditional FA to localize failure in mixed signal ICs. Three case studies were presented in this paper to establish the technique to be effective, quick and easy to probe non-invasively with minimal backside sample preparation.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

MuSim: Mutation-based Fault Localization Using Test Case Proximity

2021 ◽  
Vol 31 (05) ◽  
pp. 725-744
Author(s):  
Arpita Dutta ◽  
Amit Jha ◽  
Rajib Mall
Keyword(s):  
Fault Localization ◽  
Test Case ◽  
Test Cases ◽  
Similarity Metrics ◽  
Localization Technique ◽  
Evaluation Metric

Fault localization techniques aim to localize faulty statements using the information gathered from both passed and failed test cases. We present a mutation-based fault localization technique called MuSim. MuSim identifies the faulty statement based on its computed proximity to different mutants. We study the performance of MuSim by using four different similarity metrics. To satisfactorily measure the effectiveness of our proposed approach, we present a new evaluation metric called Mut_Score. Based on this metric, on an average, MuSim is 33.21% more effective than existing fault localization techniques such as DStar, Tarantula, Crosstab, Ochiai.

SRAM Bitcell Defect Identification Methodology Using Electrical Failure Analysis Data

2020 ◽  
Author(s):  
Hyungtae Kim ◽  
Geonho Kim ◽  
Yunrong Li ◽  
Jinyong Jeong ◽  
Youngdae Kim
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
New Technology ◽  
Random Access ◽  
Analysis Data ◽  
Test Method ◽  
Design For Test ◽  
Defect Identification ◽  
Electrical Failure ◽  
Efficient Test

Abstract Static Random Access Memory (SRAM) has long been used for a new technology development vehicle because it is sensitive to process defects due to its high density and minimum feature size. In addition, failure location can be accurately predicted because of the highly structured architecture. Thus, fast and accurate Failure Analysis (FA) of the SRAM failure is crucial for the success of new technology learning and development. It is often quite time consuming to identify defects through conventional physical failure analysis techniques. In this paper, we present an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive failure analysis method based on Electrical Failure Analysis (EFA) without destructive analysis. In addition, all the defects in a wafer can be analyzed and improved simultaneously utilizing the proposed defect identification methodology. Some successful case studies are also discussed to demonstrate the efficiency of the proposed defect identification methodology.

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

Design of Accelerated Degradation Test Method and Failure Analysis of Flexible Hybrid Electronic Devices

2020 ◽  
Author(s):  
Alex Davila-Frias ◽  
Val Marinov ◽  
Om Prakash Yadav ◽  
Yuriy Atanasov
Keyword(s):  
Failure Analysis ◽  
Failure Process ◽  
Electronic Devices ◽  
Test Method ◽  
Stress Factors ◽  
Accelerated Degradation ◽  
Failure Data ◽  
Degradation Data ◽  
Accelerated Life ◽  
Temperature And Humidity

Abstract Accelerated life testing (ALT) has been a common choice to study the effects of environmental stresses on flexible hybrid electronics (FHE), a promising technology to produce flexible electronic devices. Nevertheless, accelerated degradation testing (ADT) has proven to be a more effective approach, which does not require failure occurrences, allowing shorter testing times. Since FHE devices are expected to be highly reliable, ADT provides useful information in the form of degradation data for further analysis without actual failure data. In this paper, we present the design and experimental setup of ADT for FHE considering two stress factors simultaneously. We use daisy-chain resistance as a measurable degradation characteristic to periodically monitor the degradation of FHE products under accelerated stress conditions. Two stress factors, temperature and humidity, are considered and ADT was carried out considering four combinations of temperature and humidity simultaneously. Failure analysis was performed on failed units to investigate the failure process and location of the failure. The ADT data was used to fit in the appropriate mathematical degradation model representing the failure process. The data analysis showed faster degradation paths for higher stress combinations. Finally, we present insights and further research opportunities to expand the work.

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