Stabilized Linear Operation of CMOS Power Transistors for Si-RF Transceiver Integration

Author(s):  
Kazuhide Abe ◽  
Tadahiro Sasaki ◽  
Kazuhiko Itaya
Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1563
Author(s):  
Jae Kwon Ha ◽  
Chang Kyun Noh ◽  
Jin Seop Lee ◽  
Ho Jin Kang ◽  
Yu Min Kim ◽  
...  

In this work, a multi-mode radar transceiver supporting pulse, FMCW and CW modes was designed as an integrated circuit. The radars mainly detect the targets move by using the Doppler frequency which is significantly affected by flicker noise of the receiver from several Hz to several kHz. Due to this flicker noise, the long-range detection performance of the radars is greatly reduced, and the accuracy of range to the target and velocity is also deteriorated. Therefore, we propose a transmitter that suppresses LO leakage in consideration of long-range detection, target distance, velocity, and noise figure. We also propose a receiver structure that suppresses DC offset due to image signal and LO leakage. The design was conducted with TSMC 65 nm CMOS process, and the designed and fabricated circuit consumes a current of 265 mA at 1.2 V supply voltage. The proposed transmitter confirms the LO leakage suppression of 37 dB at 24 GHz. The proposed receiver improves the noise figure by about 20 dB at 100 Hz by applying a double conversion architecture and an image rejection, and it illustrates a DC rejection of 30 dB. Afterwards, the operation of the pulse, FMCW, and CW modes of the designed radar in integrated circuit was confirmed through experiment using a test PCB.


Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2316
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Karen Geens ◽  
Shuzhen You ◽  
...  

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.


Physica B+C ◽  
1985 ◽  
Vol 129 (1-3) ◽  
pp. 337-341
Author(s):  
Wolf-Dieter Nowak ◽  
Heinrich Schlangenotto

2016 ◽  
Vol 49 (39) ◽  
pp. 393001 ◽  
Author(s):  
Zenji Yatabe ◽  
Joel T Asubar ◽  
Tamotsu Hashizume

2013 ◽  
Vol 427-429 ◽  
pp. 1268-1271
Author(s):  
Xue Wen He ◽  
Ying Fei Sheng ◽  
Kuan Gang Fan ◽  
Le Ping Zheng ◽  
Qing Mei Cao

In view of the existing flaws of traditional manual observations, a new type of tailing reservoir safety monitoring and warning system based on ZigBee and LabVIEW was designed. The system chose SoC chip CC2530 as the RF transceiver and designed the low-power wireless sensor networks nodes to collect and process the data of tailing reservoir. It chose ZigBee 2007 as the network communication protocol, and uploaded the data to PC by RS232 serial port. The monitoring and warning interface of PC was completed with LabVIEW. The testing results show that the data transmission of the network is stable and the system is suitable for real-time monitoring and warning of the tungsten tailing reservoir.


Author(s):  
M.I. Castro Simas ◽  
M.S. Piedade
Keyword(s):  

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