Alternating Over-Current Characteristics of HTSC Tape Using DFT

2006 ◽  
Vol 16 (2) ◽  
pp. 1063-1066 ◽  
Author(s):  
S.-H. Lim ◽  
S.-W. Yim ◽  
S.-D. Hwang ◽  
H.-S. Choi ◽  
B.-S. Han
Author(s):  
А.Б. Салтыков ◽  
С.В. Грачев

Редукционистский подход в медицине рассматривает живые системы в качестве закрытых (замкнутых) образований, функции которых полностью детерминированы свойствами соответствующих материальных компонентов. Каждое нарушение функции объясняется предшествующими изменениями структур, реализующих эту функцию. Из этого следует, что любая патология структурно-функциональна по своей сути, а понятие «функциональные заболевания» - принципиально ошибочно из-за искажения причинно-следственных отношений. По мере прогресса медицины ожидается открытие собственно первичных структурных маркеров «функциональных» заболеваний, что будет иметь решающее значение для их ранней диагностики и патогенетического лечения (ориентированного прежде всего, на устранение первичного звена расстройств). Вместе с тем, в медицине существует более общий холистический (функционально ориентированный) подход, формирующий иной стереотип клинического мышления. В этих рамках любая патология объясняется недостаточностью адаптивных функций организма в изменившихся условиях существования. Обычно сложный характер функциональных взаимодействий делает невозможным их описание на основе текущих характеристик материальных компонентов системы, особенно при воздействии на организм внешних патогенных факторов. Именно внешние воздействия способны инициировать первичный дефицит адаптивных механизмов с заведомо вторичными структурными изменениями, что позволяет перестать рассматривать «функциональные болезни» как принципиально ошибочное понятие. Первичный дефицит функций наиболее нагляден при информационной патологии, идеальная природа которой не сводится к соответствующим материальным носителям. Все это ставит под сомнение возможность обнаружения собственно первичных структурных маркеров некоторых заболеваний, особенно если в их основе лежит информационная патология (невроз, нервная анорексия, психическая аменорея, морская болезнь, некоторые формы фантомных болей и др.). Reductionist approach in medicine considers living systems as closed (closed) formations whose functions are completely determined by the properties of the corresponding material components. Each disturbance of the function is explained by previous changes in the structures that realize this function. From this it follows that any pathology is structurally functional in its essence, and the concept of «functional diseases» is fundamentally erroneous because of the distortion of cause-effect relationships. As medicine progresses, the actual primary structural markers of «functional» diseases are expected to be discovered, which will be crucial for their early diagnosis and pathogenetic treatment (primarily aimed at eliminating the primary link of disorders). At the same time, in medicine there is a more general holistic (functionally oriented) approach, forming a different stereotype of clinical thinking. Within this framework, any pathology is due to the lack of adaptive functions of the organism in the changed conditions of existence. Usually the complex nature of functional interactions makes it impossible to describe them on the basis of the current characteristics of the material components of the system, especially when external pathogenic factors influence the organism. It is external actions that can initiate a primary deficit of adaptive mechanisms with known secondary structural changes, which allows us to stop treating «functional diseases» as a fundamentally wrong concept. The primary deficit of functions is most evident in information pathology, the ideal nature of which is not reduced to the corresponding material carriers. All this calls into question the possibility of detecting the primary structural markers of certain diseases, especially if they are based on information pathology (neurosis, anorexia nervosa, mental amenorrhea, seasickness, some forms of phantom pains, etc.).


Author(s):  
E. Widener ◽  
S. Tatti ◽  
P. Schani ◽  
S. Crown ◽  
B. Dunnigan ◽  
...  

Abstract A new 0.5 um 1 Megabit SRAM which employed a double metal, triple poly CMOS process with Tungsten plug metal to poly /silicon contacts was introduced. During burn-in of this product, high currents, apparently due to electrical overstress, were experienced. Electrical analysis showed abnormal supply current characteristics at high voltages. Failure analysis identified the sites of the high currents of the bum-in rejects and discovered cracks in the glue layer prior to Tungsten deposition as the root cause of the failure. The glue layer cracks allowed a reaction with the poly/silicon, causing opens at the bottom of contacts. These floating nodes caused high currents and often latch-up during burn-in. Designed experiments in the wafer fab identified an improved glue layer process, which has been implemented. The new process shows improvement in burn in performance as well as outgoing product quality.


Brazil constitutes a globally vital but troubled economy. It accounts for the largest GDP in Latin America and ranks among the world’s largest exporters of critical commodities including iron ore, soya, coffee, and beef. In recent years Brazil’s global economic importance has been magnified by a surge in both outward and inward foreign direct investment. This has served to further internationalize what has been historically a relatively closed economy. The purpose of this Handbook is to offer real insight into the Brazil’s economic development in contemporary context, understanding its most salient characteristics and analyzing its structural features across various dimensions. At a more granular level, this volume accomplishes the following tasks. First, it provides an understanding of the economy’s evolution over time and the connection of its current characteristics to this evolution. Second, it analyzes Brazil’s broader place in the global economy, and considers the ways in which this role has changed, and is likely to change, over coming years. Third, reflecting contemporary concerns, the volume offers an understanding, not only of how one of the world’s key economies has developed and transformed itself, but also of the ways in which this process has yet to be completed. The volume thus analyzes the current challenges facing the Brazilian economy and the kinds of issues that need to be tackled for these to be addressed.


1984 ◽  
Vol 20 (2) ◽  
pp. 63 ◽  
Author(s):  
N.A. Olsson ◽  
N.K. Dutta ◽  
W.T. Tsang ◽  
R.A. Logan

2020 ◽  
Vol 14 (5) ◽  
pp. 252-255
Author(s):  
Kulandai Velu Ramanathan ◽  
Balakrishnan Shankar ◽  
Shantikumar V. Nair ◽  
Mariyappan Shanmugam

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.


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