Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation

2015 ◽  
Vol 30 (5) ◽  
pp. 2445-2455 ◽  
Author(s):  
Thanh-That Nguyen ◽  
Ashraf Ahmed ◽  
T. V. Thang ◽  
Joung-Hu Park
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Reliability

Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation

2020 ◽  
Vol 1004 ◽  
pp. 770-775
Author(s):  
Rina Tanaka ◽  
Katsutoshi Sugawara ◽  
Yutaka Fukui ◽  
Hideyuki Hatta ◽  
Hidenori Koketsu ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Short Circuit ◽  
Effective Means ◽  
Gate Oxide ◽  
Device Performance ◽  
High Concentration ◽  
Safe Operation ◽  
Major Drawback ◽  
Oxide Reliability ◽  
Conventional Device

Gate oxide reliability of a trench-gate SiC MOSFET can be improved by incorporating a gate protection structure, but the resulting parasitic JFET resistance is one major drawback. For reduction of on-resistance, a new method of localized high-concentration n-type doping in JFET regions (JD) is developed. Utilizing process and device simulation by TCAD, the optimal condition of JD that enables maximum device performance is derived. By fabricating a device with the optimal JD structure, the on-resistance is successfully reduced by 25% compared to a conventional device without JD, while maintaining the withstand voltage and the gate oxide electric field at the same level. As a result, a device exhibiting a specific on-resistance of 1.84 mΩcm2 and a breakdown voltage of 1560 V is obtained. The optimal JD structure maintains the short-circuit safe operation area comparable to that for the structure without JD. Thus, by reducing the JFET resistance while minimizing effects on other characteristics, localized JD is shown to be an effective means of realizing a reliable, low-resistance SiC power device.

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

2018 ◽  
Vol 924 ◽  
pp. 697-702 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Levi Gant ◽  
Blake Powell ◽  
Kasturirangan Rangaswamy ◽  
Kevin Matocha
Keyword(s):  
Room Temperature ◽  
Stress Testing ◽  
Short Circuit ◽  
Gate Oxide ◽  
High Volume ◽  
Inductive Load ◽  
Switching Losses ◽  
Oxide Reliability ◽  
Silicon Cmos

This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at room temperature, increasing to 7.5 mΩ.cm2 at 175 °C. Total switching losses were less than 300μJ (VDD = 800V, ID = 20A). The devices showed excellent gate oxide reliability with VTH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (VGS = 25V) and 2500 hours (VGS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed.

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

The impact of F contamination induced by the process on the gate oxide reliability

1998 ◽  
Vol 38 (2) ◽  
pp. 255-258 ◽  
Author(s):  
G Ghidini ◽  
C Clementi ◽  
D Drera ◽  
F Maugain
Keyword(s):  
Gate Oxide ◽  
Oxide Reliability ◽  
The Impact

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

2016 ◽  
Author(s):  
Toru Hiyoshi ◽  
Kosuke Uchida ◽  
Mitsuhiko Sakai ◽  
Masaki Furumai ◽  
Takashi Tsuno ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Stress Conditions ◽  
Oxide Reliability

Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs

2021 ◽  
Author(s):  
Tianshi Liu ◽  
Shengnan Zhu ◽  
Michael Jin ◽  
Limeng Shi ◽  
Marvin H. White ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Power Mosfets ◽  
Oxide Reliability

Clamping Virtual Supply Voltage of Power-Gated Circuits for Active Leakage Reduction and Gate-Oxide Reliability

2013 ◽  
Vol 21 (3) ◽  
pp. 580-584 ◽  
Author(s):  
Abhishek Sinkar ◽  
Taejoon Park ◽  
Nam Sung Kim
Keyword(s):  
Supply Voltage ◽  
Gate Oxide ◽  
Leakage Reduction ◽  
Oxide Reliability

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging
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