Thermal Conductivity of Highly Ordered Amorphous and Crystalline Mesoporous Titania Thin Films

Author(s):  
Thomas Coquil ◽  
Laurent Pilon ◽  
Christian Reitz ◽  
Torsten Brezesinski ◽  
Joseph E. Nemanick ◽  
...  

This paper reports the cross-plane thermal conductivity of amorphous and crystalline templated mesoporous titania thin films synthesized by evaporation-induced self-assembly. Both sol-gel and nanocrystal-based films were considered, with respective average porosities of 30% and 35%. The pore diameter ranged from 7 to 25 nm and film thickness from 60 to 370 nm while the average wall thickness varied from 3 to 25 nm. Nanocrystals in crystalline mesoporous films featured diameters between 9 and 13 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with data reported in the literature for dense titania films with thickness ranging from 95 to 1000 nm. The cross-plane thermal conductivity of the amorphous mesoporous titania thin films did not show strong dependence on pore size, wall thickness, or film thickness. This can be attributed to the high atomic scale disorder of amorphous materials. Heat is thus mainly carried by localized non-propagating vibrational modes. The average thermal conductivity of the amorphous mesoporous titania films was identical to that of the nanocrystal-based films and equal to 0.37 W/m.K. Thermal conductivity of sol-gel crystalline mesoporous titania thin films was significantly larger than that of their amorphous counterparts. It also depended on the organic template used to make the films. The results indicated that the pore size was not an important factor. Instead thermal conductivity depended only on porosity, crystallinity, nanocrystal size and connectivity.

Author(s):  
Thomas Coquil ◽  
Neal Hutchinson ◽  
Laurent Pilon ◽  
Erik Richman ◽  
Sarah Tolbert

This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosity of 25% and 45%, respectively. The pore diameter ranged from 3 to 18 nm and film thickness from 80 to 540 nm while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with data reported in the literature for the silicon substrate and for high quality thermal oxide thin films with thickness ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized non propagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30 ± 0.02 W/mK, while it was 0.20 ± 0.01 W/mK for the hexagonal films. This corresponds to a reduction of 79% and 86% from bulk fused silica at room temperature.


Author(s):  
Jin Fang ◽  
Laurent Pilon ◽  
Chris B. Kang ◽  
Sarah H. Tolbert

This paper reports the cross-plane thermal conductivity of ordered polycrystalline mesoporous silicon thin films between 30 and 320 K. The films were produced by a combination of evaporation induced self-assembly (EISA) of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon was characterized by a combination of 1D X-ray diffraction, 2D small angle X-ray scattering, and direct SEM imaging. The average crystallite size, porosity, and film thickness were about 13–18 nm, 25–35%, and 140–260 nm, respectively. The pores were arranged in a face-centered cubic lattice. Finally, the cross-plane thermal conductivity of the meso-porous silicon thin films was measured using the 3ω method. The measured thermal conductivity was about 3 to 5 orders of magnitude smaller than that of the bulk dense crystalline silicon for the temperature range considered. The effects of temperature and film thickness on the thermal conductivity were investigated.


Author(s):  
Jin Fang ◽  
Laurent Pilon ◽  
Christian Reitz ◽  
Torsten Brezesinski ◽  
E. Joseph Nemanick ◽  
...  

This paper reports, for the first time, the cross-plane thermal conductivity of amorphous and crystalline templated cubic mesoporous titania thin films from 30 to 320 K. Both sol-gel and nanocrystal-based films were synthesized by evaporation-induced self-assembly with porosity of 30% to 35%, respectively. The pore diameter in sol-gel mesoporous films ranged from 14 to 25 nm and film thickness from 120 to 370 nm. Crystalline domains in crystalline mesoporous films were 9 to 13 nm in diameter. The thermal conductivity was measured between 30 and 320 K using the 3ω method. The experimental setup and the associated analysis were first validated by comparing experimental measurements with data reported in the literature for high purity silicon substrate and thermal oxide films over the temperature range considered. The thermal conductivity of sol-gel dense and mesoporous TiO2 films was found to increase with increasing temperature. The thermal conductivity of polycrystalline dense film was strongly dependent on temperature while that of dense amorphous and mesoporous films increased slowly with increasing temperature. The amorphous mesoporous TiO2 films featured very small thermal conductivity due to the fact that heat was mainly transferred by very localized non-propagating vibrational modes. Despite the particles crystallinity, the nanocrystal-based film showed significantly lower thermal conductivity than that of the sol-gel polycrystalline mesoporous thin films due to the strong phonon scattering at the nanocrystal boundaries.


2010 ◽  
Vol 114 (29) ◽  
pp. 12451-12458 ◽  
Author(s):  
Thomas Coquil ◽  
Christian Reitz ◽  
Torsten Brezesinski ◽  
E. Joseph Nemanick ◽  
Sarah H. Tolbert ◽  
...  

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.


Author(s):  
T. M. Correia ◽  
Q. Zhang

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.


2011 ◽  
Vol 61 (2) ◽  
pp. 355-361 ◽  
Author(s):  
P. Karasiński ◽  
E. Gondek ◽  
S. Drewniak ◽  
I. V. Kityk

2019 ◽  
Vol 2019 ◽  
pp. 1-7 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Piya Jitthammapirom ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek

In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.


Sign in / Sign up

Export Citation Format

Share Document