Effects of Corner Frequency on Bandwidth and Resonance Amplitude in Designing PZT Thin-Film Actuators: An Experimental Demonstration

2005 ◽  
Author(s):  
Chia-Che Wu ◽  
Cheng-Chun Lee ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Lead Zirconate Titanate ◽  
Corner Frequency ◽  
Frequency Bandwidth ◽  
Resonance Amplitude ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Wide Range ◽  
Silicon Beam

In the last decade, Lead Zirconate Titanate Oxide (PZT) thin-film actuators have received increasing attention because of their high frequency bandwidth, large actuation strength, fast response, and small size. The PZT film thickness is usually less than several microns as opposed to hundreds of microns for bulk PZT patches that are commercially available. As a result, PZT thin-film actuators pose unique vibration issues that do not appear in actuators with bulk PZT. Two major issues affecting actuator performance are the frequency bandwidth and the resonance amplitude. As an electromechanical device, a PZT thin-film actuator’s bandwidth and resonance amplitude depend not only on the lowest natural frequency ωn of the actuator’s mechanical structure but also on the corner frequency ωc of the actuator’s RC-circuit. For PZT thin-film actuators, the small film thickness implies large film capacitance C and small ωc. When the size of the actuator decreases, frequency ωn increases dramatically. As a result, improper design of PZT thin-film actuators could lead to ωc ≪ ωn substantially reducing the actuator bandwidth and the resonance amplitude. This paper is to demonstrate this phenomenon through calibrated experiments. In the experiments, frequency response functions of a fixed-fixed silicon beam with a 1-μm thick PZT film are measured through use of a laser Doppler vibrometer and a spectrum analyzer. The silicon beam has multiple electrodes with a wide range of resistance R and corner frequency ωc. The experimental results confirm that the actuator bandwidth and resonance amplitude are substantially reduced when ωc ≪ ωn.

The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

1991 ◽  
Vol 243 ◽  
Author(s):  
Vinay Chikarmane ◽  
Jiyoung Kim ◽  
C. Sudhama ◽  
Jack Lee ◽  
Al Tasch ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transformation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Initial Increase ◽  
Transformation Kinetics ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Phase Transformation Kinetics ◽  
Pzt Thin Film

AbstractThe Pt-Lead Zirconate Titanate (PZT) thin film interface plays a key role in determining the electrical properties and phase transformation kinetics of Pt-PZT-Pt thin film capacitor structures. The results of the electrical and material properties of PZT (65/35) films that vary in thickness between 500 Å to 4000 Å deposited by DC-magnetron sputtering under identical deposition conditions, and subjected to the same post-deposition thermal processing conditions shows that the Pt-PZT interface dominates thin film properties at low thicknesses (≦ 2000 Å). The charge storage density (Qc') and maximum polarization (Pmax) shows an anomalous variation with thickness, showing an initial increase followed by a drastic decrease as the film thickness is scaled down to 500Å. Significant interdiffusion at the PZT film-Pt electrode retards the pyrochlore-to-perovskite phase transformation nucleation and growth rate in PZT films of thickness 2000Å and lower. Gate polarity dependence of the time-tobreakdown and the degradation field is observed for all PZT film thicknesses (including 4000Å). This indicates that the ferroelectric film-electrode interface has an important role to play in determining the electrical reliability properties even in the 4000Å thick PZT film, although Qc' and Pmax are not adversely affected at these thicknesses.

Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

2001 ◽  
Vol 16 (10) ◽  
pp. 3005-3008 ◽  
Author(s):  
F. Ayguavives ◽  
B. Agius ◽  
B. EaKim ◽  
I. Vickridge
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Low Leakage ◽  
Pzt Film ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Current Densities

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

Actuation Enhancement of PZT Thin-Film Membrane Actuators via Stress Relief Grooves

2008 ◽  
Author(s):  
Cheng-Chun Lee ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Finite Element ◽  
Film Thickness ◽  
Stress Relief ◽  
Design Parameters ◽  
Finite Element Analyses ◽  
Membrane Area ◽  
Aspect Ratios ◽  
Pzt Film ◽  
Pzt Thin Film

Lead Zirconate Titanate Oxide (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. A common design is PZT membrane microactuator, whose actuation portion takes a form of a thin diaphragm driven by a PZT thin film. To maximize actuation displacements, finite element analyses are conducted to identify critical design parameters of the PZT film. In the simulation, a constant driving electric field is maintained and boundary conditions of the PZT film are varied. The finite element analyses lead to two important results. First, the actuator displacement increases as the PZT film thickness increases, but saturates at a critical PZT film thickness. Second, when stress relief grooves are introduced and the PZT film surrounding the membrane area is removed, the actuator displacement increases substantially by at least a factor of 5.

Effects of corner frequency on bandwidth and resonance amplitude in designing PZT thin-film actuators

2006 ◽  
Vol 125 (2) ◽  
pp. 178-185 ◽  
Author(s):  
Chia-Che Wu ◽  
Cheng-Chun Lee ◽  
G.Z. Cao ◽  
I.Y. Shen
Keyword(s):  
Thin Film ◽  
Corner Frequency ◽  
Resonance Amplitude ◽  
Pzt Thin Film

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

Plasticity contributions to interface adhesion in thin-film interconnect structures

2000 ◽  
Vol 15 (12) ◽  
pp. 2758-2769 ◽  
Author(s):  
Michael Lane ◽  
Reinhold H. Dauskardt ◽  
Anna Vainchtein ◽  
Huajian Gao
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Fracture Energy ◽  
Fracture Resistance ◽  
Work Of Adhesion ◽  
Interface Fracture ◽  
Cohesive Stress ◽  
Wide Range ◽  
Macroscopic Fracture ◽  
Metal Layers

The effects of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures were explored using experiments and multiscale simulations. Particular attention was given to the relationship between the intrinsic work of adhesion, Go, and the measured macroscopic fracture energy, Gc. Specifically, the TaN/SiO2 interface fracture energy was measured in thin-film Cu/TaN/SiO2 structures in which the Cu layer was varied over a wide range of thickness. A continuum/FEM model with cohesive surface elements was employed to calculate the macroscopic fracture energy of the layered structure. Published yield properties together with a plastic flow model for the metal layers were used to predict the plasticity contribution to interface fracture resistance where the film thickness (0.25–2.5 μm) dominated deformation behavior. For thicker metal layers, a transition region was identified in which the plastic deformation and associated plastic energy contributions to Gc were no longer dominated by the film thickness. The effects of other salient interface parameters including peak cohesive stress and Go are explored.

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Modelling of Partially Wetting Liquid Film Using an Enhanced Thin Film Model for Aero-Engine Bearing Chamber Applications

2020 ◽  
Author(s):  
K. Singh ◽  
M. Sharabi ◽  
R. Jefferson-Loveday ◽  
S. Ambrose ◽  
C. Eastwick ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Film Thickness ◽  
Liquid Film ◽  
Flow Rate ◽  
Operating Conditions ◽  
Film Model ◽  
Thin Film Model ◽  
Wide Range ◽  
Aero Engine

Abstract In the case of aero-engine, thin lubricating film servers dual purpose of lubrication and cooling. Prediction of dry patches or lubricant starved region in bearing or bearing chambers are required for safe operation of these components. In the present work thin liquid film flow is numerically investigated using the framework of the Eulerian thin film model (ETFM) for conditions which exhibit partial wetting phenomenon. This model includes a parameter that requires adjustment to account for the dynamic contact angle. Two different experimental data sets have been used for comparisons against simulations, which cover a wide range of operating conditions including varying the flow rate, inclination angle, contact angle, and liquid-gas surface tension coefficient. A new expression for the model parameter has been proposed and calibrated based on the simulated cases. This is employed to predict film thickness on a bearing chamber which is subjected to a complex multiphase flow. From this study, it is observed that the proposed approach shows good quantitative comparisons of the film thickness of flow down an inclined plate and for the representative bearing chamber. A comparison of model predictions with and without wetting and drying capabilities is also presented on the bearing chamber for shaft speed in the range of 2,500 RPM to 10,000 RPM and flow rate in the range of 0.5 liter per minute (LPM) to 2.5 LPM.

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