Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total reflection x‐ray fluorescence, atomic force microscopy, and Auger electron spectroscopy

1993 ◽  
Vol 11 (4) ◽  
pp. 1692-1695 ◽  
Author(s):  
Rama I. Hegde ◽  
Philip J. Tobin ◽  
Robert W. Fiordalice ◽  
Edward O. Travis
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Total Reflection ◽  
Tin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Non-Vacuum Deposition of Buffer Layer for YBCO Superconductor Oxide Films

2005 ◽  
Vol 868 ◽  
Author(s):  
Raghu Bhattacharya ◽  
Sovannary Phok ◽  
Priscila Spagnol ◽  
Tapas Chaudhuri
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ybco Superconductor ◽  
Vacuum Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pole Figures ◽  
Better Than

AbstractNonvacuum electrodeposition was used to prepare biaxially textured CeO2 and Sm-doped CeO2 coatings on Ni-W substrates. The samples were characterized by X-ray diffraction (including Θ/2Θ, pole figures, omega scans, and phi scans), atomic force microscopy, and Auger electron spectroscopy (AES). Pole-figure scans show that electrodeposited CeO2 and Sm-doped CeO2 on textured Ni-W (3 at.%) is cube textured. Full-width at half-maximum values of thew scan andf scan of the electrodeposited layers were better than those of the Ni-W base substrates, indicating improved biaxial texturing of the electrodeposited layers. AES analysis of the YBCO/CeO2/YSZ/ED-CeO2/Ni-W revealed that Ni interdiffusion was completely stopped at the first electrodeposited CeO2 layer.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

2006 ◽  
Vol 527-529 ◽  
pp. 67-70 ◽  
Author(s):  
Govindhan Dhanaraj ◽  
Yi Chen ◽  
Michael Dudley ◽  
Hui Zhang
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Bulk Crystals ◽  
Hydrogen Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

Bulk crystals and epitaxial layers of 6H SiC have been grown and their surface morphologies have been investigated. Seeded sublimation has been employed to obtain bulk 6H SiC crystals whereas a silicon tetrachloride-propane based chemical vapor deposition (CVD) was used for growing epitaxial layers. The hot-zones were designed using numerical simulation. Growth rates up to 200 μm/hr could be achieved in the CVD process. A new growth-assisted hydrogen etching was developed to reveal the distribution of the micropipes present in the substrate. Morphological features were studied using Nomarski, atomic force microscopy (AFM), and scanning electron microscopy (SEM), and the structural quality was evaluated using synchrotron X-ray topography.

The Use of Tris(Trimethylsilyl)Arsine to Deposit GaAs by OMCVD

1990 ◽  
Vol 204 ◽  
Author(s):  
Alan D. Berry ◽  
Andrew P. Purdy ◽  
Richard L. Wells ◽  
James W. Pasterczyk ◽  
James D. Johansen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Low Pressures

ABSTRACTChemical vapor deposition experiments using (Me3Si)3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi-conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500°C and low pressures.

scholarly journals Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition

2012 ◽  
Vol 3 ◽  
pp. 6-9 ◽  
Author(s):  
Ananta R. Acharya ◽  
Brian D. Thoms
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical

The compositional, structural and optical characterizations of In1-xGaxN epilayers grown by high pressure chemical vapor deposition have been carried out using Auger electron spectroscopy, x-ray diffraction and optical transmission spectroscopy. Auger electron spectroscopy revealed 14% gallium and 86% indium composition of the total metal contents in the In1-xGaxN epilayers. X-ray diffraction pattern showed three prominent peaks centered at 31.4?, 32.86? and 34.5? which are assigned to In1-xGaxN (0002), In (101) and GaN (0002) Bragg reflexes respectively. These results indicate no macroscopic observable phase separation in the analyzed In1-xGaxN sample. The optical transmission spectroscopy and the Beer-Lambert’s law quatified the absorption band edge to be 1.6 eV for the analyzed In1-xGaxN epilayers.The Himalayan PhysicsVol. 3, No. 32012Page: 6-9

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

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