Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

2006 ◽  
Vol 527-529 ◽  
pp. 67-70 ◽  
Author(s):  
Govindhan Dhanaraj ◽  
Yi Chen ◽  
Michael Dudley ◽  
Hui Zhang
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Bulk Crystals ◽  
Hydrogen Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

Bulk crystals and epitaxial layers of 6H SiC have been grown and their surface morphologies have been investigated. Seeded sublimation has been employed to obtain bulk 6H SiC crystals whereas a silicon tetrachloride-propane based chemical vapor deposition (CVD) was used for growing epitaxial layers. The hot-zones were designed using numerical simulation. Growth rates up to 200 μm/hr could be achieved in the CVD process. A new growth-assisted hydrogen etching was developed to reveal the distribution of the micropipes present in the substrate. Morphological features were studied using Nomarski, atomic force microscopy (AFM), and scanning electron microscopy (SEM), and the structural quality was evaluated using synchrotron X-ray topography.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

The Effects of Friction and Wear on PECVD Diamond Films.

1994 ◽  
Vol 339 ◽  
Author(s):  
M. L. Languell ◽  
J. L. Davidson ◽  
J. J. Wert ◽  
M. A. George ◽  
W. E. Collins ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Friction And Wear ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nasa Lewis Research ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Diameter ◽  
Before And After ◽  
Surface Changes

ABSTRACTThe effects of friction and wear were examined on plasma enhanced chemical vapor deposition (PECVD) diamond films deposited on tungsten substrates. The tribology of diamond on diamond was studied and the changes in surface roughness and the bearing ratio were determined before and after wear. The (111) textured heteroepitaxial films were studied morphologically by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The changes in morphology involved a transition from the large as grown diamond crystallites with a mean diameter of 10 μm to a surface with grains as small as 100 nm. The nature of the wear-modified films will be discussed regarding the possible mechanisms for the surface changes.Work partially supported by NASA Lewis Research Center grant NAG3–1430.

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