Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

1994 ◽  
Author(s):  
G. W. Vogl ◽  
K. H. Monz ◽  
Quang D. Nguyen ◽  
Michael Huter ◽  
Eduard P. Rille ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Dc Magnetron Sputtering ◽  
Ion Plating

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

scholarly journals Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1063
Author(s):  
Badis Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Fiber Texture ◽  
Dc Magnetron Sputtering ◽  
Sem Images ◽  
Aln Film ◽  
Aln Buffer

This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

Characterization of the Piezoelectric Response of Aluminum Nitride Grown by dc Magnetron Sputtering for Applications in Thin-Film Resonators

1996 ◽  
Vol 444 ◽  
Author(s):  
Rajan S. Naik ◽  
Joseph J. Lutsky ◽  
Rafael Reif ◽  
Charles G. Sodini
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Parameter Extraction ◽  
Bulk Acoustic Wave ◽  
Piezoelectric Response ◽  
Device Performance ◽  
Coupling Coefficients ◽  
Dc Magnetron Sputtering ◽  
Device Structure

AbstractAluminum nitride is a promising material for use in thin-film bulk acoustic wave resonators for applications in RF bandpass filters. This paper discusses the requirements needed for a dc magnetron sputtering system to grow piezoelectrically active films with x-ray diffraction rocking curves of 3.3° on silicon substrates, 5° on aluminum substrates and oxygen concentrations of l at.%. For applications in integrated resonators, a materials characterization is insufficient in predicting the subsequent device performance. A simple acoustic device structure which allows a quick measurement of the device performance is used to extract maximum effective coupling coefficients keff2 of 0.009% at 3.4GHz and 0.002% at 2.4GHz for two different films with rocking curves of 5.7° and 9.0° respectively. This parameter extraction technique may be used to make relative comparisons between films grown under different deposition conditions.

High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering

2008 ◽  
Vol 8 (9) ◽  
pp. 4557-4560 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Dae-Yong Moon ◽  
Sang-Ho Lee ◽  
Chang-Oh Jeong ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Chemical Properties ◽  
High Mobility ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
Channel Layer

Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure
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