scholarly journals Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

Author(s):  
Cyril Bellegarde ◽  
Houssein El Dirani ◽  
Xavier Letartre ◽  
Camille Petit-Etienne ◽  
Christelle Monat ◽  
...  
Eng ◽  
2021 ◽  
Vol 2 (4) ◽  
pp. 531-543
Author(s):  
Dimitris Uzunidis ◽  
Fotini Apostolopoulou ◽  
Gerasimos Pagiatakis ◽  
Alexandros Stavdas

Optical multi-band (OMB) systems exploit the low-loss spectrum of the single mode fiber (SMF) and are key enablers to increase the transportation capacity and node connectivity of already deployed systems. The realization of OMB systems is mainly based on the technological advances on the component and system level, and for this purpose, a broad gamut of various structural elements, such as transceivers, amplifiers, filters, etc. have been commercialized already or are close to commercialization. This wide range of options, which aid in unlocking the concurrent transmission in all amplification bands, is reviewed here for the first time, whilst their pros and cons as well as their limitations are discussed. Furthermore, the needs for additional components in order to fully exploit the ≈390 nm low-loss wavelength range of SMF, which spans from 1260 to 1650 nm, are highlighted. Finally, based on a physical layer formalism, which incorporates the impact of the most important physical layer constraints for an OMB system, the attainable capacity and transparent reach of each amplification band are quantified.


2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Chang Kyun Ha ◽  
Kee Hwan Nam ◽  
Myeong Soo Kang

AbstractOptical nanotapers fabricated by tapering optical fibers have attracted considerable interest as an ultimate platform for high-efficiency light-matter interactions. While previously demonstrated applications relied exclusively on the low-loss transmission of only the fundamental mode, the implementation of multimode tapers that adiabatically transmit several modes has remained very challenging, hindering their use in various emerging applications in multimode nonlinear optics and quantum optics. Here, we report the realization of multimode submicron tapers that permit the simultaneous adiabatic transmission of multiple higher-order modes including the LP02 mode, through introducing deep wet-etching of conventional fiber before fiber tapering. Furthermore, as a critical application, we demonstrate fundamental-to-fundamental all-fiber third-harmonic generation with high conversion efficiencies. Our work paves the way for ultrahigh-efficiency multimode nonlinear and quantum optics, facilitating nonclassical light generation in the multimode regime, multimode soliton interactions and photonic quantum gates, and manipulation of the evanescent-field-induced optical trapping potentials of atoms and nanoparticles.


2020 ◽  
Author(s):  
Chang Kyun Ha ◽  
Kee Hwan Nam ◽  
Myeong Soo Kang

Abstract Silica nanofibers fabricated by tapering optical fibers have attracted considerable interest as an ultimate platform for high-efficiency light-matter interactions. While previously demonstrated applications relied exclusively on the low-loss transmission of only the fundamental mode, the implementation of multimode tapers that adiabatically transmit several modes has remained very challenging, hindering their use in various emerging applications in multimode nonlinear optics and quantum optics. Here, we report the first realization of multimode submicron tapers that permit the simultaneous adiabatic transmission of multiple higher-order modes including the LP02 mode, through introducing deep wet-etching of conventional fiber before fiber tapering. Furthermore, as a critical application, we demonstrate "fundamental-to-fundamental" all-fiber third-harmonic generation with high conversion efficiencies. Our work paves the way for ultrahigh-efficiency multimode nonlinear and quantum optics, facilitating nonclassical light generation in the multimode regime, multimode soliton interactions and photonic quantum gates, and manipulation of the evanescent-field-induced optical trapping potentials of atoms and nanoparticles.


2015 ◽  
Vol 3 (5) ◽  
Author(s):  
A. Borrielli ◽  
A. Pontin ◽  
F. S. Cataliotti ◽  
L. Marconi ◽  
F. Marin ◽  
...  
Keyword(s):  

2013 ◽  
Vol 23 (8) ◽  
pp. 085010 ◽  
Author(s):  
E Serra ◽  
A Bagolini ◽  
A Borrielli ◽  
M Boscardin ◽  
F S Cataliotti ◽  
...  
Keyword(s):  

Author(s):  
David C. Joy ◽  
Dennis M. Maher

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.


Author(s):  
Oliver C. Wells

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.


Author(s):  
C P Scott ◽  
A J Craven ◽  
C J Gilmore ◽  
A W Bowen

The normal method of background subtraction in quantitative EELS analysis involves fitting an expression of the form I=AE-r to an energy window preceding the edge of interest; E is energy loss, A and r are fitting parameters. The calculated fit is then extrapolated under the edge, allowing the required signal to be extracted. In the case where the characteristic energy loss is small (E < 100eV), the background does not approximate to this simple form. One cause of this is multiple scattering. Even if the effects of multiple scattering are removed by deconvolution, it is not clear that the background from the recovered single scattering distribution follows this simple form, and, in any case, deconvolution can introduce artefacts.The above difficulties are particularly severe in the case of Al-Li alloys, where the Li K edge at ~52eV overlaps the Al L2,3 edge at ~72eV, and sharp plasmon peaks occur at intervals of ~15eV in the low loss region. An alternative background fitting technique, based on the work of Zanchi et al, has been tested on spectra taken from pure Al films, with a view to extending the analysis to Al-Li alloys.


Author(s):  
Daniel UGARTE

Small particles exhibit chemical and physical behaviors substantially different from bulk materials. This is due to the fact that boundary conditions can induce specific constraints on the observed properties. As an example, energy loss experiments carried out in an analytical electron microscope, constitute a powerful technique to investigate the excitation of collective surface modes (plasmons), which are modified in a limited size medium. In this work a STEM VG HB501 has been used to study the low energy loss spectrum (1-40 eV) of silicon spherical particles [1], and the spatial localization of the different modes has been analyzed through digitally acquired energy filtered images. This material and its oxides have been extensively studied and are very well characterized, because of their applications in microelectronics. These particles are thus ideal objects to test the validity of theories developed up to now.Typical EELS spectra in the low loss region are shown in fig. 2 and energy filtered images for the main spectral features in fig. 3.


Author(s):  
Rudolf Oldenbourg

The recent renaissance of the light microsope is fueled in part by technological advances in components on the periphery of the microscope, such as the laser as illumination source, electronic image recording (video), computer assisted image analysis and the biochemistry of fluorescent dyes for labeling specimens. After great progress in these peripheral parts, it seems timely to examine the optics itself and ask how progress in the periphery facilitates the use of new optical components and of new optical designs inside the microscope. Some results of this fruitful reflection are presented in this symposium.We have considered the polarized light microscope, and developed a design that replaces the traditional compensator, typically a birefringent crystal plate, with a precision universal compensator made of two liquid crystal variable retarders. A video camera and digital image processing system provide fast measurements of specimen anisotropy (retardance magnitude and azimuth) at ALL POINTS of the image forming the field of view. The images document fine structural and molecular organization within a thin optical section of the specimen.


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