QUANTUM THEORY OF THE SEEBECK COEFFICIENT IN METALS

2000 ◽  
Vol 14 (21) ◽  
pp. 2231-2240 ◽  
Author(s):  
S. FUJITA ◽  
H.-C. HO ◽  
Y. OKAMURA
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Theory ◽  
Seebeck Coefficient ◽  
Carrier Density ◽  
Noble Metals ◽  
Einstein Relation ◽  
Charge Carrier Density ◽  
Thermal Emf ◽  
Different Temperatures ◽  
New Formula

Based on the idea that different temperatures generate different carrier densities and the resulting diffusion causes the thermal emf, a new formula for the Seebeck coefficient S is obtained: [Formula: see text], where q, n, εF, [Formula: see text]. and [Formula: see text]. are respectively charge, carrier density, Fermi energy, density of states at ∊F and volume. Ohmic and Seebeck currents are fundamentally different in nature. This difference can cause significantly different transport behaviors. For a multi-carrier metal the Einstein relation between the conductivity and the diffusion coefficient does not hold in general. Seebeck (S) and Hall (RH) coefficients in noble metals have opposite signs. This is shown to arise from the Fermi surface having "necks" at the Brillouin boundary.

THEORY OF THE SEEBECK COEFFICIENT IN ALKALI AND NOBLE METALS

1999 ◽  
Vol 13 (20) ◽  
pp. 689-694 ◽  
Author(s):  
SHIGEJI FUJITA ◽  
HUNG-CHEUK HO ◽  
SALVADOR GODOY
Keyword(s):  
Energy Density ◽  
Charge Carrier ◽  
Fermi Surface ◽  
Seebeck Coefficient ◽  
Carrier Density ◽  
Noble Metals ◽  
Alkali Metals ◽  
Charge Carrier Density ◽  
Different Shapes ◽  
New Formula

A new formula for the Seebeck coefficient S is obtained: [Formula: see text], where q, n, ε F , [Formula: see text] and [Formula: see text] are, respectively, charge, carrier density, Fermi energy, density of states at ε F and volume. Seebeck (S) and Hall (R H ) coefficients in alkali metals are both negative while these coefficients in noble metals have opposite signs. This difference is shown to arise from the different shapes of the Fermi surface.

scholarly journals Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055005 ◽  
Author(s):  
Johannes Boy ◽  
Martin Handwerg ◽  
Rüdiger Mitdank ◽  
Zbigniew Galazka ◽  
Saskia F. Fischer
Keyword(s):  
Charge Carrier ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Carrier Density ◽  
Charge Carrier Density

Topology knots and hierarchy problem

2019 ◽  
Author(s):  
Vitaly Kuyukov
Keyword(s):  
Quantum Theory ◽  
String Theory ◽  
Quantum Gravity ◽  
Dimensional Space ◽  
Space Time ◽  
Elementary Particles ◽  
Hierarchy Problem ◽  
Topological Quantum ◽  
Dimensional Space Time ◽  
New Formula

Many approaches to quantum gravity consider the revision of the space-time geometry and the structure of elementary particles. One of the main candidates is string theory. It is possible that this theory will be able to describe the problem of hierarchy, provided that there is an appropriate Calabi-Yau geometry. In this paper we will proceed from the traditional view on the structure of elementary particles in the usual four-dimensional space-time. The only condition is that quarks and leptons should have a common emerging structure. When a new formula for the mass of the hierarchy is obtained, this structure arises from topological quantum theory and a suitable choice of dimensional units.

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

scholarly journals Zn2+ Ion Surface Enrichment in Doped Iron Oxide Nanoparticles Leads to Charge Carrier Density Enhancement

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 16328-16337 ◽  
Author(s):  
Stanley Bram ◽  
Matthew N. Gordon ◽  
Michael A. Carbonell ◽  
Maren Pink ◽  
Barry D. Stein ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Charge Carrier ◽  
Iron Oxide Nanoparticles ◽  
Carrier Density ◽  
Oxide Nanoparticles ◽  
Charge Carrier Density ◽  
Surface Enrichment ◽  
Density Enhancement

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals A Temperature Variation of Debye-Waller Factor for Alkali and Noble Metals

1983 ◽  
Vol 38 (5) ◽  
pp. 503-508 ◽  
Author(s):  
A. R. Jani ◽  
V. B. Gohel
Keyword(s):  
Experimental Data ◽  
Temperature Variation ◽  
Phenomenological Model ◽  
Noble Metals ◽  
Experimental Information ◽  
Waller Factor ◽  
Critical Examination ◽  
Debye Waller Factor ◽  
Different Temperatures ◽  
Experimental Findings

Debye-Waller factors at different temperatures of four alkali and three noble metals have been computed on the basis of a screened shell phenomenological model. The theoretical values are compared with existing experimental data. Particularly for lithium and potassium, most recent experimental information has been included. A critical examination of the results reveals a satis­factory agreement between the theoretical and experimental findings.

Tuning of charge carrier density by deposition pressure in Sb-doped Bi2Se3 thin films

2020 ◽  
Vol 693 ◽  
pp. 137689
Author(s):  
S. Abhirami ◽  
Shilpam Sharma ◽  
E.P. Amaladass ◽  
R. Rajitha ◽  
P. Magudapathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Carrier Density ◽  
Charge Carrier Density ◽  
Deposition Pressure
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