P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

2012 ◽  
Vol 557-559 ◽  
pp. 1984-1987
Author(s):  
Hui Qun Zhu ◽  
Yu Ming Li ◽  
Jun Long Li ◽  
Ling Sun
Keyword(s):  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Phosphorus Concentration ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Measurement Results ◽  
Doped Zno ◽  
P Type

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017 cm-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

Properties of ZnO/Diamond Film Heterojunction

2010 ◽  
Vol 663-665 ◽  
pp. 1209-1212
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Boron Doped ◽  
Doped Zno ◽  
Hall Effect Measurement System ◽  
P Type ◽  
Hot Filament

High quality boron-doped p-type freestanding diamond (FSD) films with smooth nucleation surface were prepared by hot filament chemical vapor deposition (HFCVD) method. The effects of B/C ratios on the electrical properties of FSD films were investigated by Hall effect measurement system. N-type Al-doped ZnO films were prepared on p-type FSD films by radio-frequency (RF) magnetron sputtering method to fabricate heterojunction. The I-V characteristic of the heterojunction was examined. The results showed a rectifying behavior of this structure.

P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn3N2:Al PRECURSORS

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO
Keyword(s):  
Thermal Oxidation ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Different Temperatures ◽  
Chemical States ◽  
Temperature Window ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

Properties of Li-Doped ZnO Films Deposited on Diamond Films

2013 ◽  
Vol 544 ◽  
pp. 234-237
Author(s):  
Mei Ai Lin ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Bing Ren ◽  
...  
Keyword(s):  
Diamond Films ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Reactive Gas

Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

Growth of ZnS Films and Application in Heterojunction

2011 ◽  
Vol 287-290 ◽  
pp. 2140-2143 ◽  
Author(s):  
Jian Huang ◽  
Lin Jun Wang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Si Substrates ◽  
Current Voltage ◽  
P Type ◽  
Zns Films

ZnS films were prepared by radio-frequency (RF) magnetron sputtering method. The effects of substrate temperature and annealing treatment on the properties of ZnS films were studied. The ZnS films were characterized by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The results showed that the higher substrate temperature and post-deposition annealing treatment was helpful in improving the crystalline quality of the films, and the film had an n-type conductivity. N-type ZnS films were also deposited on p-type single-crystalline silicon (Si) substrates to fabricate ZnS/ Si heterojunction. The current-voltage (I-V) characteristic of the heterojunction was examined, which showed a rectifying behavior with turn-on voltage of about 2V.

Effects of Substrate Pre-deposition Annealing and Deposition Parameters on the Properties of RF Sputter-deposited ZnO Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
T. N. Oder ◽  
M. McMaster ◽  
A. Smith ◽  
N. Velpukonda ◽  
D. Sternagle
Keyword(s):  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Ultra High Purity ◽  
Luminescence Peak ◽  
Sputter Deposited ◽  
P Type

ABSTRACTZinc Oxide thin films were deposited on sapphire substrates by radio frequency (RF) magnetron sputtering from an ultra-high purity ZnO solid target. The ZnO films were deposited on sapphire substrates heated in oxygen and/or in vacuum prior to deposition. Additional parameters investigated included the substrate temperature varied from 25 °C to 600 °C, the deposition gas pressure varied from 5 mTorr to 40 mTorr and the gas flow rate varied from 5 to 30 standard cubic centimeter per minute (sccm). The resulting films were annealed using a rapid thermal processor in N2 gas at 900 °C for 5 min. Analyses carried out using photoluminescence spectroscopy (PL) and X-ray diffraction (XRD) measurements indicate that films deposited at 300 °C using Ar:O2 (1:1) had the best optical and microstructure qualities. Pre-heating the sapphire substrate in oxygen prior to deposition was found to create a smoother sapphire surface, and this produced a ZnO film with greatly improved qualities. This film had a luminescence peak at 3.362 eV with a full-width-half maximum (FWHM) value of 15.3 meV when measured at 11 K. The XRD 2θ-scans had peaks at 34.4° with the best FWHM value of only 0.10°. Production of high quality ZnO materials is a necessary step towards realizing highly conductive p-type doped ZnO materials which is currently a major goal in research efforts on ZnO.

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