Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

SINGLE CRYSTALLINE a-AXIS ZnO THIN FILMS DEPOSITED BY SOL-GEL METHOD FOR OPTOELECTRONIC DEVICES

2008 ◽  
Vol 22 (09) ◽  
pp. 685-692 ◽  
Author(s):  
M. P. BHOLE ◽  
D. S. PATIL
Keyword(s):  
Sol Gel ◽  
Optoelectronic Devices ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zno Film ◽  
Single Crystalline ◽  
Coating Method ◽  
Absorbance Spectra

Undoped a-axis oriented single crystalline zinc oxide ( ZnO ) films were deposited by sol-gel dip-coating method. The films were characterized by X-ray diffraction (XRD) and ultraviolet visible (UV-VIS) absorbance spectra. The films of ZnO were deposited on amorphous microscopic glass substrate at various temperatures. The XRD showed that the ZnO film was crystallized with a hexagonal structure with a strong orientation in the (100) plane, which is exactly along the a-axis and beneficial for the development of optoelectronic devices. The optical band gap energy found for this a-axis oriented ZnO film was 3.30 eV through UV-VIS absorbance spectra. The Fourier Transform Infrared Spectroscopy (FTIR) analysis was carried out by taking the IR absorbance spectra for ZnO film deposited on the silicon substrate at 450°C. It showed that the strong Zn – O stretching bond is present in the deposited film.

Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

2007 ◽  
Vol 22 (10) ◽  
pp. 2668-2675 ◽  
Author(s):  
Z.W. Liu ◽  
S.W. Yeo ◽  
C.K. Ong
Keyword(s):  
Hole Concentration ◽  
Film Structure ◽  
Zno Films ◽  
Zno Film ◽  
Annealing Conditions ◽  
Zinc Nitride ◽  
Alternative Approach ◽  
Oxidative Annealing ◽  
P Type ◽  
Type Conduction

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021–1022 cm−3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm−3, whereas the p-type ZnO:N films had hole concentrations of 1014–1016 cm−3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm−3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source.

P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

2012 ◽  
Vol 557-559 ◽  
pp. 1984-1987
Author(s):  
Hui Qun Zhu ◽  
Yu Ming Li ◽  
Jun Long Li ◽  
Ling Sun
Keyword(s):  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Phosphorus Concentration ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Measurement Results ◽  
Doped Zno ◽  
P Type

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017 cm-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn3N2:Al PRECURSORS

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO
Keyword(s):  
Thermal Oxidation ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Different Temperatures ◽  
Chemical States ◽  
Temperature Window ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

The Structural and Surface Morphology of Annealed ZnO Films

2014 ◽  
Vol 903 ◽  
pp. 73-77
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Rosli Hussin ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Zuhairi Ibrahim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Coating Method ◽  
Afm Micrographs ◽  
Dip Coating Method

ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.

scholarly journals (0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

2016 ◽  
Vol 34 (3) ◽  
pp. 555-563 ◽  
Author(s):  
Dongyun Guo ◽  
Yang Ju ◽  
Chengju Fu ◽  
Zhixiong Huang ◽  
Lianmeng Zhang
Keyword(s):  
Thin Films ◽  
Mechanical Stress ◽  
Spin Coating ◽  
Zinc Acetate ◽  
Sol Gel ◽  
Boiling Temperature ◽  
Zno Thin Films ◽  
Oriented Growth ◽  
Gel Method ◽  
Coating Method

AbstractZinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0) substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2) preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylamino)ethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2)-oriented ZnO thin films were formed by adjusting the baking temperature.

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

Structural and Photoluminescent Properties of Li-Doped ZnO Film Prepared by Sol-Gel Technique

2010 ◽  
Vol 663-665 ◽  
pp. 397-400 ◽  
Author(s):  
Peng Fei Cheng ◽  
Sheng Tao Li ◽  
Han Chen Liu ◽  
Li Xun Song ◽  
Bin Gao ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Sol Gel ◽  
Treatment Temperature ◽  
Zno Films ◽  
Zno Film ◽  
Substitutional Defect ◽  
Different Temperatures ◽  
Abnormal Phenomenon ◽  
Doped Zno ◽  
Li Content

The effect of an impurity as a donor or an acceptor in ZnO film is determined by its distribution in ZnO lattice. In this paper the distribution of Li is investigated by X-ray diffraction (XRD) and photoluminescence (PL). It is found that Li-doped ZnO films own different dependence on heat treatment temperature by contrast with pure ZnO films. For Li-doped ZnO films, although the crystallinity is promoted after heat treatment at 500oC, it is impeded effectively after heat treatment at 600oC. The abnormal phenomenon implies that Li preferential inhabits at Zn-sublattice to form a substitutional defect as an acceptor unless Li content exceeds its solubility in Zn-sublattice. The change of the PL spectra of pure ZnO films after heat treatment at different temperatures reveals that the PL peak at 650nm origins from interstitial defects. Moreover, with the increase of Li content, the intensity of the peak at 650nm decreases firstly and then increases again. This interesting changing trend further reveals that superfluous Li will enter into the octahedral interspaces as donors. As a conclusion it is proposed that it is difficult to obtain high conductive p-ZnO by monodoping of Li.

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