ENERGY DEPOSITION OF RELATIVISTIC ELECTRONS IN SUPER-HOT PLASMA

2007 ◽  
Vol 21 (27) ◽  
pp. 1855-1862 ◽  
Author(s):  
TONG-CHENG WU ◽  
XUAN ZHANG ◽  
WEI-KE AN
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Energy Deposition ◽  
Plasma Oscillation ◽  
Lorentz Factor ◽  
Relativistic Electrons ◽  
Exact Relation ◽  
Loss Mechanism ◽  
Electron Collisions ◽  
Thermonuclear Fuel

The intense ultrashort laser interacting with the thermonuclear fuel may produce a relativistic plasma and MeV electron beam, how to fix the Lorentz factors of the particles in the plasma and model the energy deposition of MeV electron beams are important subjects. In this letter, we demonstrate the exact relation between the average Lorentz factor and the temperature of the system; and then obtained the relativistic modified formula for the energy loss of the relativistic electron-beam due to binary electron-electron collisions. Another important energy loss mechanism, the excitation of Langmuir collective plasma oscillation, is also treated within the relativistic framework. Hence, we re-examine theoretically the possibility of igniting hot spots in the super-compressed DT target and the answer is that the fast ignitor scenario is able to yield thermonuclear ignition in the target.

scholarly journals The influence of a thermal plasma on synchrotron radiation

1988 ◽  
Vol 6 (3) ◽  
pp. 421-436 ◽  
Author(s):  
A. Crusius
Keyword(s):  
Synchrotron Radiation ◽  
Energy Loss ◽  
Total Energy ◽  
Thermal Plasma ◽  
Large Scale ◽  
Lorentz Factor ◽  
Physical Parameters ◽  
Relativistic Electrons ◽  
Physical Conditions ◽  
Analytical Expressions

The synchrotron emission from relativistic electrons in a thermal plasma with large-scale random magnetic fields is considered. In this case, the spectral synchrotron power of a single electron can be given in closed form allowing exact analytical expressions for the synchrotron emissivity, absorption coefficient, intensity and total energy loss of particles to be derived. The influence of various physical parameters such as gas density, magnetic field strength, particle's Lorentz factor on the resulting emissivities, intensities and energy loss is discussed in detail. Below the Razin– Tsytovich frequency vR = 20 Hz (ne/l cm−3) (B/l Gauss)−1, the spectral appearance of synchrotron radiation both in the optically thin and thick case is quite different than the vacuum behaviour. Since in the quasar broad line regions, vR is of the order 1011 Hz the suppression of synchrotron radiation may explain why most quasars are radio quiet. Likewise, the necessary physical conditions for the occurrence of synchrotron masering in the optically thick case are given. We obtain optical depth |τ|>1 for compact nonthermal sources. The total energy loss of a single particle is shown to be exponentially reduced at Lorentz factors less than γR = 2·1. 10−3 (ne/1 cm−3)½ (B/1 Gauss)−1.

scholarly journals Interaction physics of the fast ignitor concept

1997 ◽  
Vol 15 (4) ◽  
pp. 557-564 ◽  
Author(s):  
C. Deutsch ◽  
H. Furukawa ◽  
K. Mima ◽  
M. Murakami ◽  
K. Nishihara
Keyword(s):  
Energy Loss ◽  
Penetration Depth ◽  
Hot Spots ◽  
Ultrafast Lasers ◽  
Langmuir Wave ◽  
Relativistic Electrons ◽  
Wave Excitation ◽  
Fast Ignitor ◽  
Binary Collisions ◽  
Thermonuclear Fuel

The interaction of relativistic electrons produced by ultrafast lasers and focussing them on strongly precompressed thermonuclear fuel is analytically modelled. Energy loss to target electrons is treated through binary collisions and Langmuir wave excitation. The overall penetration depth is determined by quasielastic and multiple scattering on target ions. Thus, it appears possible to ignite efficient hot spots in a target with density larger than 300 g/cc.

Probing the Chemistry and Spectroscopy of Radiation-Sensitive Polymers by Parallel-Detection EELS

1990 ◽  
Vol 48 (2) ◽  
pp. 34-35
Author(s):  
E. G. Rightor ◽  
G. P. Young
Keyword(s):  
Electron Beam ◽  
Bisphenol A ◽  
Energy Loss ◽  
Parallel Detection ◽  
Commercial Grade ◽  
Incident Electron Beam ◽  
Ptfe Sample ◽  
Spectroscopic Information ◽  
Edge Features ◽  
Electron Energy Loss

Investigation of neat polymers by TEM is often thwarted by their sensitivity to the incident electron beam, which also limits the usefulness of chemical and spectroscopic information available by electron energy loss spectroscopy (EELS) for these materials. However, parallel-detection EELS systems allow reduced radiation damage, due to their far greater efficiency, thereby promoting their use to obtain this information for polymers. This is evident in qualitative identification of beam sensitive components in polymer blends and detailed investigations of near-edge features of homopolymers.Spectra were obtained for a poly(bisphenol-A carbonate) (BPAC) blend containing poly(tetrafluoroethylene) (PTFE) using a parallel-EELS and a serial-EELS (Gatan 666, 607) for comparison. A series of homopolymers was also examined using parallel-EELS on a JEOL 2000FX TEM employing a LaB6 filament at 100 kV. Pure homopolymers were obtained from Scientific Polymer Products. The PTFE sample was commercial grade. Polymers were microtomed on a Reichert-Jung Ultracut E and placed on holey carbon grids.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

3d Reconstruction of Sub-Nm Beam Profiles in STEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 344-345
Author(s):  
G. Möbus ◽  
R.E. Dunin-Borkowski ◽  
C.J.D. Hethėrington ◽  
J.L. Hutchison
Keyword(s):  
Electron Beam ◽  
Chemical Analysis ◽  
Energy Loss ◽  
Intensity Distribution ◽  
Dark Field ◽  
Beam Forming ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

Introduction:Atomically resolved chemical analysis using techniques such as electron energy loss spectroscopy and annular dark field imaging relies on the ability to form a well-characterised sub-nm electron beam in a FEGTEM/STEM [1-2]. to understand EELS+EDX-signal formation upon propagation of a sub-nm beam through materials we first have to assess precisely the beam intensity distribution in vacuum and find conditions for the best obtainable resolution.Experimental Details:Modern TEM/STEM instruments combine features of both imaging and scanning technology. The beam forming capability approaches closely that for dedicated STEMs, while CCD recording devices allow us to measure the beam profile by direct imaging at magnifications up to 1.5 M. The recording of a “z-section” series through the 3D intensity distribution of the cross-over can therefore be realised by recording of a “condenser focal series”.

Arsenic Implant Activation and Redistribution in P-Type Silicon Induced by Pulsed Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Barbierf ◽  
M. Baghdadi ◽  
A. Laugier ◽  
A. Cachard
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Beam Energy ◽  
Energy Deposition ◽  
Liquid Silicon ◽  
Electron Beam Energy ◽  
Pulsed Electron Beam ◽  
Highly Active ◽  
P Type ◽  
Fluence Range

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.

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