STRUCTURE EVOLUTION AND ELECTRIC PROPERTIES OF TaN FILMS DEPOSITED ON Al2O3-BASED CERAMIC AND GLASS SUBSTRATES BY MAGNETRON REACTIVE SPUTTERING

2014 ◽  
Vol 21 (02) ◽  
pp. 1450028 ◽  
Author(s):  
YAN MING ZHOU ◽  
YANG ZHAO MA ◽  
ZHONG XIE ◽  
MING ZHI HE

Structure evolution and electric properties of tantalum nitride ( TaN ) films deposited on Al 2 O 3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N 2-to- Ar flow ratio. The TaN thin films on Al 2 O 3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta 2 N grains to TaN , and exhibits high defect density, sheet resistance and negative TCR as the N 2-to- Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta 2 N grains to TaN and Ta 3 N 5 phases with the increase of N 2-to- Ar flow ratio. These results indicate that the N 2-to- Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al 2 O 3-based ceramic and the samples on glass substrates.

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 452
Author(s):  
Mara Camaiti ◽  
Villiam Bortolotti ◽  
Yijian Cao ◽  
Alessandra Papacchini ◽  
Antonella Salvini ◽  
...  

The protection of stone cultural assets is related to the transformation of the surface characteristic from hydrophilic to hydrophobic/superhydrophobic through the application of a coating. The suitability of a coating depends not only on its capability to dramatically change the surface wettability, but also on other parameters such as the modification of kinetics of water absorption, the permanence of vapor diffusivity, the resistance of the coating to aging and the low volatile organic compound emissions during its application. In this work, an oligo(ethylensuccinamide) containing low molecular pendant perfluoropolyether segments (SC2-PFPE) and soluble in environmentally friendly solvents was tested as a protective agent for historic stone artifacts. Magnetic resonance imaging and relaxometry were employed to evaluate the effects of the surface wettability change, to follow the water diffusion inside the rock and to study the porous structure evolution after the application of SC2-PFPE. A sun-like irradiation test was used to investigate the photo-stability of the product. The results demonstrate that the highly photo-stable SC2-PFPE minimizes the surface wettability of the stone by modifying the water sorptivity without significantly affecting its porous structure and vapor diffusivity. The improved performance of SC2-PFPE in comparison to other traditional coatings makes it a potential candidate as an advanced coating for stone cultural heritage protection.


2009 ◽  
Vol 55 (3(1)) ◽  
pp. 1149-1152 ◽  
Author(s):  
DongHo Kim ◽  
ChulMin Kim ◽  
EunHong Kim ◽  
YoungChul Shin ◽  
TaeGeun Kim ◽  
...  

2020 ◽  
Vol 850 ◽  
pp. 267-272 ◽  
Author(s):  
Regina Burve ◽  
Vera Serga ◽  
Aija Krūmiņa ◽  
Raimons Poplausks

Due to its magnetic, electrical, absorption, and emission properties, nanoscale gadolinium oxide is widely used in various fields. In this research, nanocrystalline Gd2O3 powders and films on glass substrates have been produced by the extraction-pyrolytic method. X-ray diffraction analysis revealed the formation of single phase Gd2O3 with cubic crystal structure and the mean crystallite size from 9 to 25 nm in all produced materials. The morphology of samples has been characterized by scanning electron microscopy and transmission electron microscopy.


2012 ◽  
Vol 1426 ◽  
pp. 251-256 ◽  
Author(s):  
Bonne Eggleston ◽  
Sergey Varlamov ◽  
Jialiang Huang ◽  
Rhett Evans ◽  
Jonathon Dore ◽  
...  

ABSTRACTA new method to form high quality crystalline silicon thin films on cheap glass substrates is developed using a single pass of a line-focus cw diode laser in air. The laser process results in the formation of large high-quality crystals as they grow laterally in the scan direction – seeded by the previously crystallised region. Grains 10 μm in thickness, up to millimetres in length and hundreds of microns in width have been grown with virtually zero detectable intragrain defects. Another mode is found which results in much smaller crystals grown by partial melting. The dominant grain boundaries identified are Σ3 <111> 60° twins. Hall mobilities as high as 470 cm2/Vs have been recorded. A diffused emitter is used to create a p-n junction at the rear of the films which produces open-circuit voltages as high as 539 mV.


2001 ◽  
Vol 668 ◽  
Author(s):  
Ralf Hunger ◽  
Kakuya Iwata ◽  
Paul Fons ◽  
Akimasa Yamada ◽  
Koji Matsubara ◽  
...  

ABSTRACTZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10−4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10−4Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.


2007 ◽  
Vol 138 (2) ◽  
pp. 139-143 ◽  
Author(s):  
C.J. Tavares ◽  
J. Vieira ◽  
L. Rebouta ◽  
G. Hungerford ◽  
P. Coutinho ◽  
...  

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