scholarly journals Electrical transport properties of focused ion beam lithography Au contacts on PbTiO3 nanorods

2019 ◽  
Vol 09 (04) ◽  
pp. 1950028
Author(s):  
Jian Wang ◽  
Bin Chen ◽  
Heming Deng ◽  
Xiaojun Zhang ◽  
Xiaoguang Li ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Thermal Activation ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Localized States ◽  
Electrical Transport Properties ◽  
Temperature Dependent ◽  
Ion Beam Lithography

PbTiO3 nanorods with tetragonal phase were synthesized by hydrothermal method and heat treatment, and temperature-dependent electrical transport properties of individual PbTiO3 nanorod were investigated. The results show that the conductivities of PbTiO3 nanorods are gradually enhanced with temperature increasing from 77.4 to 295[Formula: see text]K, and exhibit the typical nonlinear I–V characteristics. The barrier height between Au electrode and nanorod is reduced from 0.137 to 0.088[Formula: see text]eV with increasing bias from 0.2 to 1[Formula: see text]V. The corresponding values of thermal activation energies are 0.172 and 0.06[Formula: see text]eV below the conduction band for 180–295 and 77.4–180[Formula: see text]K, respectively. This semiconductor-like behavior may result from the larger number of surface defects or localized states in the amorphorized PbTiO3.

Focused ion beam fabrication and magneto-electrical transport properties of La0.67Ca0.33MnO3 nanobridge

2014 ◽  
Vol 115 (3) ◽  
pp. 791-795 ◽  
Author(s):  
Y. J. Li ◽  
D. Y. Dong ◽  
S. L. Wang ◽  
Z. P. Wu ◽  
C. Cui ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Transport Properties

Rapid Nanomanufacturing of Metallic Break Junctions Using Focused Ion Beam Scratching and Electromigration

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Waseem Asghar ◽  
Priyanka P. Ramachandran ◽  
Adegbenro Adewumi ◽  
Mohammud R. Noor ◽  
Samir M. Iqbal
Keyword(s):  
Molecular Electronics ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Yield ◽  
Electrical Transport Properties ◽  
Metal Line ◽  
Break Junctions ◽  
Current Voltage ◽  
Before And After

Break junctions provide a direct way to interrogate electrical transport properties of molecules, in pursuit of molecular electronics devices. A number of approaches are used for the fabrication of break junctions, including optical/e-beam lithography, electromigration, mechanical control of suspended conductive electrodes/strips, and electrochemical deposition of conductive material and nanowires. All approaches either require serial and slow e-beam writing of nanoscale gaps or suffer from low-yield of nanogap electrode devices. Here, we report the use of focused ion beam (FIB) to “scratch” and remove a thin layer of gold from 3 μm wide lines. The scratch results in thinning of the metal line and subsequent current-driven electromigration results into nanogaps at precise locations with high yield of devices. Combining FIB scratching with electromigration provides an elegant approach of creating nanoscale break junctions at an exact location and with a very narrow distribution of the nanogap sizes. Current-voltage measurements are done using a probe station before and after FIB scratch, and after the breaks were formed. Most of the gaps fall within 200–300 nm range and show negligible conductivity. The approach provides a novel, rapid, and high-throughput manufacturing approach of break junction fabrication that can be used for molecular sensing.

CHARACTERIZATION OF Bi2Te3 THIN FILMS FOR APPLICATION IN MICRO-THERMO ELECTRIC COOLERS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4063-4068 ◽  
Author(s):  
SEUNG WOO HAN ◽  
MD ANWARUL HASAN ◽  
KI-HO CHO ◽  
HAK JOO LEE ◽  
DONG-HO KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Electrical Transport ◽  
Ion Beam ◽  
Test Method ◽  
Nanoindentation Test ◽  
Electrical Transport Properties ◽  
Thermo Electric

In this study we have characterized the mechanical and electrical properties of Bi 2 Te 3 thin films prepared by co-sputtering method. The film structure and morphology were revealed using the X-ray diffraction and scanning electron microscopy (SEM). Thickness of the deposited films was measured using SEM observation after FIB (Focused Ion Beam) milling, and the surface roughness of the films was analyzed using AFM (atomic force microscopy). Electrical transport properties were measured with a Hall effect measurement system, while the mechanical properties were evaluated using nanoindentation test method. Results showed that Bi 2 Te 3 thin films have amorphous structure at lower film thicknesses, but as the thickness increases the structure becomes polycrystalline. Surface roughness and crystal size of the films increased with increase in substrate temperature. Films showed higher elastic modulus and hardness values compared to those of the bulk Bi 2 Te 3 alloy. The electrical transport properties of the films were also affected by the substrate temperature.

Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

Carbon ◽  
2015 ◽  
Vol 93 ◽  
pp. 384-392 ◽  
Author(s):  
Xiao-Wen Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Cheng Zhang ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Temperature Dependent

scholarly journals The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6113
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Localized States ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Hot Filament ◽  
Si Wafer

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

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