Limited Reaction Processing of Silicon: Oxidation and Epitaxy

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Gronet ◽  
J. C. Sturm ◽  
K. E. Williams ◽  
J. F. Gibbons
Keyword(s):  
Silicon Dioxide ◽  
Polycrystalline Silicon ◽  
Electrical Characteristics ◽  
Epitaxial Silicon ◽  
High Quality ◽  
Silicon Oxidation ◽  
Reaction Processing ◽  
Silicon Silicon

ABSTRACTLimited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in – situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions

1998 ◽  
Vol 27 (4) ◽  
pp. 296-299 ◽  
Author(s):  
J. P. Henning ◽  
K. J. Schoen ◽  
M. R. Melloch ◽  
J. M. Woodall ◽  
J. A. Cooper
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Electrical Characteristics ◽  
Silicon Silicon

Electrical Characteristics of Ultra-Thin Multi-Layers of Poly-Si and Silicon Dioxide

1994 ◽  
Vol 358 ◽  
Author(s):  
Kevin K. Chan ◽  
Young H. Lee ◽  
Carol L. Stanis
Keyword(s):  
Dielectric Constant ◽  
Silicon Dioxide ◽  
Polycrystalline Silicon ◽  
Layer Structure ◽  
Tunneling Current ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Effective Dielectric Constant ◽  
Electrical Characteristics ◽  
Polycrystalline Silicon Films

ABSTRACTRough-surface polycrystalline silicon films have been used for fabrication of electrically erasable-programmable read-only-memories (EEPROM). Silicon-Rich Oxides (SRO), also known as semi-insulating polycrystalline silicon (SIPOS), have been recommended for use as electron injectors. The advantage of SRO as injectors is that both the bottom and top surfaces of the film can be used to obtain high field enhancement. An ultra-thin multi-layer structure of silicon and silicon dioxide has been fabricated by low pressure chemical vapor deposition (LPCVD). High resolution TEM shows alternating layers of 50 A thick SiO2 and polycrystalline Si (grain size ∼ 80 A) films were deposited and MOS capacitors using this multilayer dielectric were studied to understand their electrical characteristics. Both I-V and C-V measurements show that the Fowler-Nordheim tunneling current is proportional to the number of polycrystalline layers. The “turn-on” voltage of the tunneling current is determined by the thickness of first SiO2 layer, and the effective dielectric constant varies from 3.9 to 9.1, proportional to the number of poly-Si layers within the multi-layer structure (MLS). For a 350 Å stack (7 layers), the interface trap density, Dit, was 3×1010 traps/cm2, and the effective dielectric constant was roughly 9.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Sign in / Sign up

Export Citation Format

Share Document