A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

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Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-94-83 ◽

1987 ◽

Vol 94 ◽

Cited By ~ 10

Author(s):

S. B. Ogale ◽

M. Thomsen ◽

A. Madhukar

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Surface Reconstruction ◽

Molecular Beam ◽

Ion Beam ◽

Growth Front ◽

Kinetic Rates ◽

Kinetics Of ◽

Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1991292 ◽

1991 ◽

Vol 02 (C2) ◽

pp. C2-787-C2-794

Author(s):

R. KIRCHER ◽

M. FURUNO ◽

J. MUROTA ◽

S. ONO

Keyword(s):

Low Temperature ◽

Silicon Films ◽

Low Temperature Epitaxy

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Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

MRS Proceedings ◽

10.1557/proc-74-45 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 3

Author(s):

B. R. Appleton ◽

R. A. Zuhr ◽

T. S. Noggle ◽

N. Herbots ◽

S. J. Pennycook

Keyword(s):

Low Temperature ◽

Ion Beam ◽

Low Energy ◽

Ion Scattering ◽

Cross Sectional ◽

Ion Beam Deposition ◽

Epitaxial Deposition ◽

Ion Damage ◽

Low Temperature Epitaxy ◽

Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

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Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

Electronics ◽

10.3390/electronics9111858 ◽

2020 ◽

Vol 9 (11) ◽

pp. 1858

Author(s):

Matthew Whiteside ◽

Subramaniam Arulkumaran ◽

Yilmaz Dikme ◽

Abhinay Sandupatla ◽

Geok Ing Ng

Keyword(s):

Low Temperature ◽

Gate Dielectric ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Interface State ◽

State Density ◽

High Electron ◽

Gate Leakage ◽

Annealing Effects ◽

Low Temperature Epitaxy

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (IDmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (gmmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in gmmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (ID) collapse. The increase of gmmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of ID collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 1011 cm−2eV−1) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application.

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