scholarly journals Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO2 Film

2022 ◽  
Author(s):  
Fan Xu ◽  
Weilei Wang ◽  
Aoxue Xu ◽  
Daohuan Feng ◽  
Weili Liu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Ph Value ◽  
Removal Rate ◽  
Mechanical Action ◽  
Sio2 Film ◽  
Mechanical Polishing ◽  
Chemical Action ◽  
Effect Of Particle Size

Abstract This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.

An Analyzing on Material Removal Mechanism in Chemical Mechanical Polishing of Cu

2009 ◽  
Vol 416 ◽  
pp. 354-359
Author(s):  
Jian Xiu Su ◽  
Yin Xia Zhang ◽  
Xi Qu Chen ◽  
Bin Feng Yang ◽  
Dong Ming Guo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Corrosive Wear ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Chemical Action ◽  
Optimum Velocity

The components of material removal in wafer Chemical mechanical polishing (CMP) was described qualitatively based on theory of corrosive wear. The value of each component was obtained by a series of wafer CMP experiments. According to analyzing the experiment results, some conclusions are obtained as follows. There is an optimum polish velocity in wafer CMP at a certain parameter. Under the optimum velocity, the balance of interaction between the mechanical action and the chemical action is reached and the material removal rate approaches maximum. The wafer CMP is a changeful and dynamic process. It cannot be obtained ideal effect of material removal by increasing the mechanical action or chemical action only. The MRR in wafer CMP mainly depends on the interaction result between the mechanical action and the chemical action and the interaction made by abrasives is a decisive part. These results provide a theoretical guide to further understanding the material removal mechanism in wafer CMP.

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

1999 ◽  
Vol 566 ◽  
Author(s):  
Marc Bielmann ◽  
Uday Mahajan ◽  
Rajiv K. Singh
Keyword(s):  
Particle Size ◽  
Surface Area ◽  
Contact Surface ◽  
Chemical Mechanical Polishing ◽  
Alumina Particle ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Contact Surface Area ◽  
Effect Of Particle Size

Abrasive particle size plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing (CMP) of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing of silica show contradictory conclusions. We have conducted controlled measurements to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 μm to 10 μm diameter have been used in these experiments. The polishing experiments showed that the local roughness of the polished tungsten surfaces was insensitive to alumina particle size. The tungsten removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. The concept developed in our work showing that the removal rate is controlled by the contact surface area between particles and polished surface is in agreement with the different explanations for tungsten removal.

Effect of Different Abrasives on Chemical Mechanical Polishing for Magnesia Alumina Spinel

2020 ◽  
Vol 866 ◽  
pp. 115-124
Author(s):  
Zhan Kui Wang ◽  
Ming Hua Pang ◽  
Jian Xiu Su ◽  
Jian Guo Yao
Keyword(s):  
Particle Size ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Particle Size Analyzer ◽  
Scanning Electron ◽  
Shape And Size

In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP.

Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

2014 ◽  
Vol 1027 ◽  
pp. 213-216
Author(s):  
Su Fang Fu ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Jian Xiu Su
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Chemical Action ◽  
Crystal Substrate ◽  
The Stability ◽  
Polishing Efficiency

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

Study on Chemical Mechanical Polishing Mechanism of LiTaO3 Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 310-314
Author(s):  
Xin Wei ◽  
Hui Yuan ◽  
H.W. Du ◽  
Wei Xiong ◽  
Rui Wei Huang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Acoustic Signals ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Mechanical Loads ◽  
Crystal Wafer

In this paper, the scratching processes by a diamond indentor under the loads linearly increased from zero were studied to assess the mechanical behavior of LiTaO3 crystal wafer. Material removal mechanism of LiTaO3 crystal by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of LiTaO3 wafers. The chemical mechanical polishing (CMP) processes of LiTaO3 wafers were analyzed in detail according to the observation and measurement of the polished surfaces of LiTaO3 wafers with SEM and XRD. The research results show that there exist four regimes along the scratched groove with the increasing of down force in a scratching process of LiTaO3 crystal wafer, and the critical load for each regime is affected by the loading speed and final load, etc. When H2O2 and KOH are added into the polishing slurry, the material of LiTaO3 wafer is removed by chemical reaction and mechanical action sequentially in the CMP processes, and the material removal rate increases while the surface roughness is improved.

Study on Characteristic of Abrasives in Chemical Mechanical Polishing of Silicon Wafer

2010 ◽  
Vol 102-104 ◽  
pp. 658-662 ◽  
Author(s):  
Jian Xiu Su ◽  
Xi Qu Chen ◽  
Jia Xi Du ◽  
Xiu Ying Wan ◽  
Xin Ning
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Test Results ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Chemical Action ◽  
Polishing Pad ◽  
Reliable Basis

In order to understand the material removal mechanism in the process of chemical mechanical polishing (CMP), the states of abrasives in the slurry and on the polishing pad in CMP process have been studied by testing. It was concluded that although the abrasive in the slurry is in the form of agglomeration, but the abrasive on the polishing pad are in approximately uniform layer distribution. The different CMP slurries had been designed for CMP test of MRR. According to analyzing the test results, it was concluded that the mechanical action produced by the abrasive is the main mechanical action in wafer CMP process and the MRR mainly results from the interaction between the mechanical action of the abrasives and the chemical action of slurry. These results will provide a reliable basis for the building of abrasive trajectory model and a theoretical guide to further understanding the material removal mechanism in wafer CMP.

An Effect Contrast for Chemical Mechanical Polishing with Mechanical Polishing for Tungsten Steel

2009 ◽  
Vol 69-70 ◽  
pp. 98-102
Author(s):  
Ke Hua Zhang ◽  
Dong Hui Wen
Keyword(s):  
Residual Stress ◽  
Chemical Mechanical Polishing ◽  
Steel Surface ◽  
Removal Rate ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Chemical Corrosion ◽  
High Dissolution Rate ◽  
Polishing Fluid ◽  
Tungsten Steel

The interaction between the tungsten steel surface and the polishing fluid & abrasive were discussed by AFM, SEM and XRD test in order to compare the chemical performances and mechanical action of the tungsten steel polishing in the paper. The chemical mechanical polishing (CMP) and the mechanical polishing (MP) was employed, respectively. The experiments results indicated that the CMP with a higher the materials removal ratio than by MP. Because a chemical corrosion effect implies that slurries with the highest removal rate have high dissolution rate, and have a lower the residual stress, however the surface took on wrinkling.

Chemical Mechanical Polishing Slurry for Tungsten in ULSI With Large Particle Size Colloidal Silica Nano-Abrasive

2005 ◽  
Author(s):  
Kailiang Zhang ◽  
Zhitang Song ◽  
Songlin Feng
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Zeta Potential ◽  
Chemical Mechanical Polishing ◽  
Large Particle ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Large Particle Size

Silica sol nano-abrasives with large particle are prepared and characterized by TEM, PCS and Zeta potential in this paper. Results show that the silica sol nano-abrasives about 100nm are of higher stability (Zeta potential: −65mV) and narrow distribution of particle size. And then alkali CMP slurries for tungsten containing self-made silica sol nano-abrasives are prepared and applied. CMP results show that the removal rate has been improved to 367nm/min and the RMS of surface roughness has been reduced from 4.4nm to 0.80nm. In sum, one kind of alkali slurry containing 100nm silica sol for tungsten CMP is studied.

Sign in / Sign up

Export Citation Format

Share Document