Chemical Mechanical Polishing Slurry for Tungsten in ULSI With Large Particle Size Colloidal Silica Nano-Abrasive

2005 ◽  
Author(s):  
Kailiang Zhang ◽  
Zhitang Song ◽  
Songlin Feng
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Zeta Potential ◽  
Chemical Mechanical Polishing ◽  
Large Particle ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Large Particle Size

Silica sol nano-abrasives with large particle are prepared and characterized by TEM, PCS and Zeta potential in this paper. Results show that the silica sol nano-abrasives about 100nm are of higher stability (Zeta potential: −65mV) and narrow distribution of particle size. And then alkali CMP slurries for tungsten containing self-made silica sol nano-abrasives are prepared and applied. CMP results show that the removal rate has been improved to 367nm/min and the RMS of surface roughness has been reduced from 4.4nm to 0.80nm. In sum, one kind of alkali slurry containing 100nm silica sol for tungsten CMP is studied.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Effect of Different Abrasives on Chemical Mechanical Polishing for Magnesia Alumina Spinel

2020 ◽  
Vol 866 ◽  
pp. 115-124
Author(s):  
Zhan Kui Wang ◽  
Ming Hua Pang ◽  
Jian Xiu Su ◽  
Jian Guo Yao
Keyword(s):  
Particle Size ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Particle Size Analyzer ◽  
Scanning Electron ◽  
Shape And Size

In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP.

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives

2008 ◽  
Vol 594 ◽  
pp. 181-186
Author(s):  
Jhy Cherng Tsai ◽  
Jin Fong Kao
Keyword(s):  
Citric Acid ◽  
Size Effect ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Al2o3 Powder ◽  
Abrasive Size

In this paper, experiments are designed and conducted to investigate the effects of abrasive size for Chemical-Mechanical Polishing (CMP) of copper film under different additives in HNO3-based polishing slurries. Alumina modified colloidal silica 100S (φ26nm), 200S (φ40nm) and Al2O3 (φ90nm), are used as polishing abrasives in this study. Experiments showed the following results. (1) With citric acid as an additive to slurry, the removal rate (RR) of the CMP process increases with abrasive size. Surface quality, however, becomes worse at the same time. (2) With benzotriazole (BTA) as an additive, RR of the slurry with Al2O3 powder is slightly higher but it does not increase with the abrasive size in general. Surface quality tends to be worse at the same time though it is not as strong as that in the slurry with citric acid as the additive. (3) The size effect of abrasive on RR with citric acid as additive is stronger than that with BTA.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

The Influence of Groundwater on the Stability of Silica Colloids

2009 ◽  
Vol 1193 ◽  
Author(s):  
Pirkko Holtta ◽  
Mari Lahtinen ◽  
Martti Hakanen ◽  
Jukka Lehto ◽  
Piia Juhola
Keyword(s):  
Particle Size ◽  
Zeta Potential ◽  
Particle Size Distribution ◽  
Size Distribution ◽  
Colloidal Silica ◽  
Silica Sol ◽  
Low Salinity ◽  
Silica Concentration ◽  
Silica Colloids ◽  
The Stability

AbstractNon-cementitious grouts have been tested in Olkiluoto for the sealing of fractures with the small hydraulic apertures. A promising non-cementitious inorganic grout material for sealing the fractures with the apertures less than 0.05 mm is commercial colloidal silica called silica sol. The potential relevance of colloid-mediated radionuclide transport is highly dependent on their stability in different geochemical environments. The objective of this work was to follow stability of silica sol colloids in low salinity Allard and saline OLSO reference groundwater (pH 7–11) and in deionized milliQ water. Stability of silica sol colloids was followed by measuring particle size distribution, zeta potential, colloidal and reactive silica concentrations. The particle size distributions were determined applying the dynamic light scattering (DLS) method and zeta potential based on dynamic electrophoretic mobility. The colloidal silica concentration was calculated from DLS measurements applying a calibration using a standard series of silica sol. Dissolved reactive silica concentration was determined using the molybdate blue (MoO4) method.These results confirmed that the stability of silica colloids dependent significantly on groundwater salinity. In deionized water, particle size distribution and zeta potential was rather stable except the most diluted solution. In low salinity Allard, particle size distribution was rather constant and the mean particle diameter remained less than 100 nm. High negative zeta potential values indicated the existence of stable silica colloids. In saline OLSO, particle size distribution was wide from a nanometer scale to thousands of nanometers. The disappearance of large particles, decrease in colloidal particle concentration and zeta potential near zero suggest flocculation or coagulation. Under prevailing saline groundwater conditions in Olkiluoto silica colloids released from silica sol are expected to be instable but the possible influence of low salinity glacial melt water has to be considered.

Principle and Experiment of Ultrasonic Subtle Atomization in CMP

2011 ◽  
Vol 279 ◽  
pp. 287-290 ◽  
Author(s):  
Xiao Peng Liu ◽  
Xiao Chun Chen ◽  
Qing Zhong Li
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental System ◽  
Mechanical Polishing

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

scholarly journals Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO2 Film

2022 ◽  
Author(s):  
Fan Xu ◽  
Weilei Wang ◽  
Aoxue Xu ◽  
Daohuan Feng ◽  
Weili Liu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Ph Value ◽  
Removal Rate ◽  
Mechanical Action ◽  
Sio2 Film ◽  
Mechanical Polishing ◽  
Chemical Action ◽  
Effect Of Particle Size

Abstract This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.

Sign in / Sign up

Export Citation Format

Share Document