Low-Frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs

2009 ◽  
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Stack ◽  
Cap Layer ◽  
The Impact

Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs

2019 ◽  
Vol 25 (7) ◽  
pp. 237-245 ◽  
Author(s):  
Eddy R. Simoen ◽  
Amal Akheyar ◽  
Erika Rohr ◽  
Abdelkarim Mercha ◽  
C. Claeys
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Stack ◽  
Cap Layer ◽  
The Impact

Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Ceiling Construction Low-Frequency Noise Issues

2013 ◽  
Vol 649 ◽  
pp. 277-280
Author(s):  
Petra Berková ◽  
Pavel Berka
Keyword(s):  
Spectral Analysis ◽  
Low Frequency ◽  
Sound Insulation ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Frequency Tone ◽  
The Impact ◽  
40 Hz

Through the use of a spectral analysis of the source of noise – person’s movement over the ceiling construction – it was found out that in this kind of noise distinctive low-frequency tone components occur (31,5 - 40 Hz) which is beyond the evaluation area of the impact sound insulation of the ceiling construction, s. [2], [3].

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