Characterizing process semiconductor thin films with a confocal micro X-ray fluorescence microscope

2006 ◽  
Vol 21 (2) ◽  
pp. 145-147 ◽  
Author(s):  
Chris M. Sparks ◽  
Elizabeth P. Hastings ◽  
George J. Havrilla ◽  
Michael Beckstead

The versatility of confocal micro X-ray fluorescence (MXRF) in analyzing thin films on semiconductor wafers is demonstrated. Unlike conventional MXRF, confocal MXRF can depth profile sample layers and reduce spectral background. Nondestructive quantification of the silicon dioxide concentration in hafnium silicate thin films is an example of one application demonstrating the advantage of confocal MXRF. Additionally, the growth of titanium nitride films on various high-k gate dielectric substrates was analyzed with confocal MXRF due to its ability to detect sub-nm film thickness changes.

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Claudia Cancellieri ◽  
Daniel Ariosa ◽  
Aleksandr V. Druzhinin ◽  
Yeliz Unutulmazsoy ◽  
Antonia Neels ◽  
...  

Thin films generally contain depth-dependent residual stress gradients, which influence their functional properties and stability in harsh environments. An understanding of these stress gradients and their influence is crucial for many applications. Standard methods for thin-film stress determination only provide average strain values, thus disregarding possible variation in strain/stress across the film thickness. This work introduces a new method to derive depth-dependent strain profiles in thin films with thicknesses in the submicrometre range by laboratory-based in-plane grazing X-ray diffraction, as applied to magnetron-sputtering-grown polycrystalline Cu thin films with different thicknesses. By performing in-plane grazing diffraction analysis at different incidence angles, the in-plane lattice constant depth profile of the thin film can be resolved through a dedicated robust data processing procedure. Owing to the underlying intrinsic difficulties related to the inverse Laplace transform of discrete experimental data sets, four complementary procedures are presented to reliably extract the strain depth profile of the films from the diffraction data. Surprisingly, the strain depth profile is not monotonic and possesses a complex shape: highly compressive close to the substrate interface, more tensile within the film and relaxed close to the film surface. The same strain profile is obtained by the four different data evaluation methods, confirming the validity of the derived depth-dependent strain profiles as a function of the film thickness. Comparison of the obtained results with the average in-plane stresses independently derived by the standard stress analysis method in the out-of-plane diffraction geometry validates the solidity of the proposed method.


Author(s):  
Manosi Roy ◽  
Dhananjay Kumar

Abstract The objective of this study is to investigate the effect of film thickness on the bandgap of oxygen (O2)-doped titanium nitride (TiN) thin films. To accomplish this, high-quality two-dimensional O2-doped TiN films have been prepared on single-crystal sapphire substrates using a pulsed laser deposition method. The film thicknesses were varied from 3 to 100 nm by varying the number of laser pulses, while other deposition parameters are kept constant. X-ray diffraction (XRD) patterns have shown that the films grow in (111) orientation on the sapphire substrate. The increase in the intensity of the XRD (111) peak also demonstrates a better orientational alignment of the TiN films with substrate as the film thickness increases. The x-ray rocking curve has been used to measure the full width half maxima (FWHM) for each film. The FWHM values has been found to vary from 0.07 to 0.2° as the film thickness decreases. This is taken to indicate that the grain size decreases with a decrease in film thickness. Ultraviolet visible spectroscopy measurements in the wavelength range (200–800 nm) have been performed as well, which indicates an increase in the bandgap of O2-doped TiN films with a decrease in film thickness. The decrease in the film thickness leads to a blue shift of the peak in the ultraviolet-visible absorption (UV-A) region; this blueshift is accompanied by an increase in the bandgap of O2-doped TiN from 3.2 to 3.8 eV. The change in the bandgap due to a change in film thickness has been explained using the quantum confinement effect.


1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


2021 ◽  
Vol 28 (6) ◽  
Author(s):  
Noritake Isomura ◽  
Keiichiro Oh-ishi ◽  
Naoko Takahashi ◽  
Satoru Kosaka

Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.


1993 ◽  
Vol 37 ◽  
pp. 229-234 ◽  
Author(s):  
H. Kohno ◽  
T. Arai ◽  
Y. Araki ◽  
R. Wilson

The wafer analyzer has been used to fulfil many applications needs in the semiconductor industry. The prominent features of the XRF method for the semiconductor industry are:analysis of many types of films, e.g., oxides, silicides and metallic alloys, and simultaneous analysis of film thickness and compositions.In the past, the analysis results of BPSG (Boron-doped Phospho-Silicate Glass) films, with thicknesses greater than 4000 Å, were reported. With the recent increased demand for larger scale and higher quality semiconductor devices (larger than 64 Mbit), more accurate analysis with high precision has been required.


2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.


1993 ◽  
Vol 07 (27) ◽  
pp. 1741-1746
Author(s):  
S.F. XU ◽  
Y.J. TIAN ◽  
H.B. LÜ ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  

We have successfully fabricated high-quality YBa 2 Cu 3 O 7−x (YBCO) thin films grown on sapphire with epitaxial Yttria-Stabilized ZrO 2 (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction and Auger depth profile were used to characterize these thin films. The values of zero-resistance temperature Tco and critical current density J c (at 77 K) of c-axis oriented YBCO thin film with 500 Å-YSZ buffer layer were 91 K and 2.2×106 A/cm 2, respectively. The Auger depth profile showed that no obvious diffusion occurred between the buffer layer and the YBCO film. The influence of substrate temperature and thickness of buffer layer has been investigated.


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