Blue Shift in Ultraviolet Absorption Spectra of Oxygen Doped Titanium Nitride Thin Films

2020 ◽  
Author(s):  
Manosi Roy ◽  
Dhananjay Kumar
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Titanium Nitride ◽  
Quantum Confinement Effect ◽  
Blue Shift ◽  
Laser Pulses ◽  
Visible Absorption ◽  
Tin Films ◽  
X Ray ◽  
Deposition Parameters

Abstract The objective of this study is to investigate the effect of film thickness on the bandgap of oxygen (O2)-doped titanium nitride (TiN) thin films. To accomplish this, high-quality two-dimensional O2-doped TiN films have been prepared on single-crystal sapphire substrates using a pulsed laser deposition method. The film thicknesses were varied from 3 to 100 nm by varying the number of laser pulses, while other deposition parameters are kept constant. X-ray diffraction (XRD) patterns have shown that the films grow in (111) orientation on the sapphire substrate. The increase in the intensity of the XRD (111) peak also demonstrates a better orientational alignment of the TiN films with substrate as the film thickness increases. The x-ray rocking curve has been used to measure the full width half maxima (FWHM) for each film. The FWHM values has been found to vary from 0.07 to 0.2° as the film thickness decreases. This is taken to indicate that the grain size decreases with a decrease in film thickness. Ultraviolet visible spectroscopy measurements in the wavelength range (200–800 nm) have been performed as well, which indicates an increase in the bandgap of O2-doped TiN films with a decrease in film thickness. The decrease in the film thickness leads to a blue shift of the peak in the ultraviolet-visible absorption (UV-A) region; this blueshift is accompanied by an increase in the bandgap of O2-doped TiN from 3.2 to 3.8 eV. The change in the bandgap due to a change in film thickness has been explained using the quantum confinement effect.

Characterizing process semiconductor thin films with a confocal micro X-ray fluorescence microscope

2006 ◽  
Vol 21 (2) ◽  
pp. 145-147 ◽  
Author(s):  
Chris M. Sparks ◽  
Elizabeth P. Hastings ◽  
George J. Havrilla ◽  
Michael Beckstead
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Titanium Nitride ◽  
Depth Profile ◽  
Gate Dielectric ◽  
Hafnium Silicate ◽  
X Ray ◽  
Dielectric Substrates ◽  
Semiconductor Thin Films

The versatility of confocal micro X-ray fluorescence (MXRF) in analyzing thin films on semiconductor wafers is demonstrated. Unlike conventional MXRF, confocal MXRF can depth profile sample layers and reduce spectral background. Nondestructive quantification of the silicon dioxide concentration in hafnium silicate thin films is an example of one application demonstrating the advantage of confocal MXRF. Additionally, the growth of titanium nitride films on various high-k gate dielectric substrates was analyzed with confocal MXRF due to its ability to detect sub-nm film thickness changes.

Mechanical testing and microstructural characterisation of TiN thin films

1997 ◽  
Vol 505 ◽  
Author(s):  
A. Karimi ◽  
O. R. Shojaei ◽  
J. L. Martin
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Titanium Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Bulge Test ◽  
Tin Films ◽  
Deposition Parameters

ABSTRACTMechanical properties of titanium nitride (TiNx) thin films have been investigated using the bulge test and the depth sensing nanoindentation measurements. The bulge test was performed on the square free standing membranes made by means of standard micromachining of silicon wafers, while the nanoindentation was conducted on the films adhered to their supporting substrate. Thin layeres of titanium nitride (t = 300 – 1000 nm) were deposited in a r. f. magnetron sputtering system on the Si(100) wafers containing a layer of low stress LPCVD silicon nitride (SiNy). The bulge test was first conducted on the silicon nitride film to determine its proper residual stress and Young's modulus. Then, the composite membrane made of TiNx together with underlying silicon nitride was bulged and the related load-displacement variation was measured. Finally, using a simple rule of mixture formula the elastic mechanical properties of TiNx coatings were calculated. Both the Young's modulus and residual stress showed increasing values with negative bias voltage and nitrogen to titanium ratio, but the substrate temperature between 50–570°C was found less significant as compared to the other parameters. Nanoindentation data extracted from dynamically loading-unloading of TiN films converged to the bulge test measurements for compact coatings, but diverged from the bulge test data for porous coatings. Scanning electron microscopy observation of the cross sectioned specimens showed that TiN films first grow by formation of the nanocrystallites of size mostly between 10 – 15 nm. These nanocrystallites give rise to the columnar morphology beyond a thickness of 50–100 nm. The columns change their aspect with deposition parameters, but remain nearly perpendicular to the film surface. Relationship between microstructural evolution of columns and mechanical properties of coatings are discussed in terms of deposition parameters.

GLANCING INCIDENCE X-RAY STUDIES OF TITANIUM NITRIDE THIN FILMS USING A NEW MULTIPURPOSE LABORATORY SPECTROMETER

1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
X Ray

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode

2021 ◽  
Vol 28 (6) ◽  
Author(s):  
Noritake Isomura ◽  
Keiichiro Oh-ishi ◽  
Naoko Takahashi ◽  
Satoru Kosaka
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Absorption Spectroscopy ◽  
Electron Spectroscopy ◽  
Practical Method ◽  
Decay Length ◽  
Total Electron ◽  
X Ray ◽  
Logarithmic Equation ◽  
X Ray Absorption

Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.

High Accuracy Analysis of BPSG Thin Films on Silicon Wafers by X-Ray Wafer Analyzer

1993 ◽  
Vol 37 ◽  
pp. 229-234 ◽  
Author(s):  
H. Kohno ◽  
T. Arai ◽  
Y. Araki ◽  
R. Wilson
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Semiconductor Industry ◽  
High Accuracy ◽  
Metallic Alloys ◽  
Accuracy Analysis ◽  
Accurate Analysis ◽  
X Ray ◽  
The Past ◽  
Boron Doped

The wafer analyzer has been used to fulfil many applications needs in the semiconductor industry. The prominent features of the XRF method for the semiconductor industry are:analysis of many types of films, e.g., oxides, silicides and metallic alloys, and simultaneous analysis of film thickness and compositions.In the past, the analysis results of BPSG (Boron-doped Phospho-Silicate Glass) films, with thicknesses greater than 4000 Å, were reported. With the recent increased demand for larger scale and higher quality semiconductor devices (larger than 64 Mbit), more accurate analysis with high precision has been required.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

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