scholarly journals Silicon-Based Light Sources for Silicon Integrated Circuits

2008 ◽  
Vol 2008 ◽  
pp. 1-12 ◽  
Author(s):  
L. Pavesi
Keyword(s):  
Integrated Circuits ◽  
Silicon Nanocrystals ◽  
Light Sources ◽  
Bulk Silicon ◽  
Light Emitters ◽  
The Past ◽  
Silicon Integrated Circuits ◽  
Silicon Based ◽  
Physical Reasons ◽  
Near Future

Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

scholarly journals Role of Lidar Technology in Future NASA Space Missions

2008 ◽  
Vol 1076 ◽  
Author(s):  
Farzin Amzajerdian
Keyword(s):  
Space Vehicles ◽  
Light Sources ◽  
Precise Data ◽  
The Past ◽  
Solar System Bodies ◽  
Remote Sensing Techniques ◽  
Near Future ◽  
Topography Data ◽  
Laser Remote Sensing

ABSTRACTThe past success of lidar instruments in space combined with potentials of laser remote sensing techniques in improving measurements traditionally performed by other instrument technologies and in enabling new measurements have expanded the role of lidar technology in future NASA missions. Compared with passive optical and active radar/microwave instruments, lidar systems produce substantially more accurate and precise data without reliance on natural light sources and with much greater spatial resolution. NASA pursues lidar technology not only as science instruments, providing atmospherics and surface topography data of Earth and other solar system bodies, but also as viable guidance and navigation sensors for space vehicles. This paper summarizes the current NASA lidar missions and describes the lidar systems being considered for deployment in space in the near future.

scholarly journals High and Low Dielectric Constant Materials

1999 ◽  
Vol 8 (2) ◽  
pp. 26-30
Author(s):  
Rajenda Singh ◽  
Richard K. Ulrich
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
A Value ◽  
Silicon Integrated Circuits ◽  
Low Dielectric Constant Materials ◽  
High Dielectric ◽  
Silicon Based

Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).

Chip-Scale Quantum Emitters

2021 ◽  
Vol 3 (4) ◽  
pp. 615-642
Author(s):  
Morteza Sasani Ghamsari
Keyword(s):  
Integrated Circuits ◽  
Recent Progress ◽  
2D Materials ◽  
Photonic Integrated Circuits ◽  
Light Sources ◽  
Practical Application ◽  
Quantum Technology ◽  
Silicon Based ◽  
Quantum Photonics ◽  
Quantum Emitters

Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development of chip-scale quantum emitters. It seems that the next step towards the practical application of quantum emitters is to generate position-controlled quantum light sources. Among developed processes, it can be recognized that droplet–epitaxial QD growth has a promising future for the preparation of chip-scale quantum emitters.

scholarly journals Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

2021 ◽  
Vol 9 ◽  
Author(s):  
Yize Su ◽  
Chenhao Wang ◽  
Zijian Hong ◽  
Wei Sun
Keyword(s):  
Silicon Nanocrystals ◽  
Recent Progress ◽  
Luminescent Properties ◽  
High Availability ◽  
Synthetic Methods ◽  
Processing Conditions ◽  
Bulk Silicon ◽  
Precise Control ◽  
The Past ◽  
Effects Of Temperature

In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.

Automated Detection of Pin Defects on Counterfeit Microelectronics

2018 ◽  
Author(s):  
Pallabi Ghosh ◽  
Domenic Forte ◽  
Damon L. Woodard ◽  
Rajat Subhra Chakraborty
Keyword(s):  
Integrated Circuits ◽  
Depth Map ◽  
Optical Microscope ◽  
Automated Detection ◽  
Detection Methods ◽  
Global Supply Chains ◽  
Subject Matter Experts ◽  
Security Breaches ◽  
The Past ◽  
Skilled Subject

Abstract Counterfeit electronics constitute a fast-growing threat to global supply chains as well as national security. With rapid globalization, the supply chain is growing more and more complex with components coming from a diverse set of suppliers. Counterfeiters are taking advantage of this complexity and replacing original parts with fake ones. Moreover, counterfeit integrated circuits (ICs) may contain circuit modifications that cause security breaches. Out of all types of counterfeit ICs, recycled and remarked ICs are the most common. Over the past few years, a plethora of counterfeit IC detection methods have been created; however, most of these methods are manual and require highly-skilled subject matter experts (SME). In this paper, an automated bent and corroded pin detection methodology using image processing is proposed to identify recycled ICs. Here, depth map of images acquired using an optical microscope are used to detect bent pins, and segmented side view pin images are used to detect corroded pins.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

1998 ◽  
Author(s):  
D.S. Patrick ◽  
L.C. Wagner ◽  
P.T. Nguyen
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Yield Enhancement ◽  
Production Test ◽  
Final Test ◽  
Critical Design ◽  
The Past ◽  
Product Engineering ◽  
Time Savings ◽  
Analysis Design

Abstract Failure isolation and debug of CMOS integrated circuits over the past several years has become increasingly difficult to perform on standard failure analysis functional testers. Due to the increase in pin counts, clock speeds, increased complexity and the large number of power supply pins on current ICS, smaller and less equipped testers are often unable to test these newer devices. To reduce the time of analysis and improve the failure isolation capabilities for failing ICS, failure isolation is now performed using the same production testers used in product development, multiprobe and final test. With these production testers, the test hardware, program and pattern sets are already available and ready for use. By using a special interface that docks the production test head to failure isolation equipment such as the emission microscope, liquid crystal station and E-Beam prober, the analyst can quickly and easily isolate the faillure on an IC. This also enables engineers in design, product engineering and the waferfab yield enhancement groups to utilize this equipment to quickly solve critical design and yield issues. Significant cycle time savings have been achieved with the migration to this method of electrical stimulation for failure isolation.

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