scholarly journals New Concept of Differential Effective Mobility in MOS Transistors

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
K. Bennamane ◽  
G. Ghibaudo
Keyword(s):  
Electric Field ◽  
Field Model ◽  
Drain Current ◽  
Local Electric Field ◽  
Mos Transistors ◽  
Field Approach ◽  
Inversion Charge ◽  
Effective Mobility ◽  
Effective Electric Field

A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.

Local electric field factors by a combined charge-transfer and point–dipole interaction model

RSC Advances ◽  
2015 ◽  
Vol 5 (40) ◽  
pp. 31594-31605 ◽  
Author(s):  
Nazanin Davari ◽  
Shokouh Haghdani ◽  
Per-Olof Åstrand ◽  
George C. Schatz
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Force Field ◽  
Linear Response ◽  
Field Model ◽  
Interaction Model ◽  
Dipole Interaction ◽  
Interaction Force ◽  
Local Electric Field ◽  
Point Dipole

A model for the local electric field as a linear response to a frequency-dependent external electric field is presented based on a combined charge-transfer and point–dipole interaction force-field model.

scholarly journals Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection

2003 ◽  
Vol 26 (4) ◽  
pp. 197-204
Author(s):  
R. Marrakh ◽  
A. Bouhdada
Keyword(s):  
Electric Field ◽  
Drain Current ◽  
Carrier Injection ◽  
Mos Transistors ◽  
Hot Carriers ◽  
Mos Transistor ◽  
Hot Carrier ◽  
Mos Structure ◽  
Hot Carrier Injection ◽  
Lightly Doped Drain

The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modeling of the drain current in relation to defects due to the hot-carrier injection allows us to investigate the I–V characteristics and the transconductance of devices. Consequently, we can know the amount of the device degradation caused by these defects in order to find technological solutions to optimize reliability.

Measurement of the effective electric field radius on Digital ion trap spectrometer

The Analyst ◽  
2021 ◽  
Author(s):  
Fuxing Xu ◽  
Weimin Wang ◽  
Bingjun Qian ◽  
Liuyu Jin ◽  
Chuanfan Ding
Keyword(s):  
Electric Field ◽  
Signal Intensity ◽  
Ion Trap ◽  
Great Influence ◽  
Mass Range ◽  
Ion Trapping ◽  
Fundamental Parameter ◽  
Digital Ion Trap ◽  
Effective Electric Field

The effective electric field radius is a fundamental parameter of ion trap which has great influence on ion trapping capability, signal intensity, mass range and some other properties of ion...

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

Synergistic effects of nonmetal co-doping with sulfur in anatase TiO2: a DFT + U study

2015 ◽  
Vol 17 (5) ◽  
pp. 3426-3434 ◽  
Author(s):  
Qing-Lu Liu ◽  
Zong-Yan Zhao ◽  
Qing-Ju Liu
Keyword(s):  
Electric Field ◽  
Synergistic Effects ◽  
Anatase Tio2 ◽  
Local Electric Field ◽  
Energy Bands ◽  
Deep Impurity ◽  
Co Doping

S + NM co-doping could induce a stronger local electric field and eliminate the deep impurity energy bands of S mono-doped TiO2.

High Aspect Ratio Tilted Gratings Through Local Electric Field Modulation in Plasma Etching

2021 ◽  
Author(s):  
Zhitian Shi ◽  
Konstantins Jefimovs ◽  
Antonino La Magna ◽  
Marco Stampanoni ◽  
Lucia Romano
Keyword(s):  
Aspect Ratio ◽  
Electric Field ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Local Electric Field ◽  
Field Modulation
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