scholarly journals Investigation of Phonon Vibrational Modes in Ga, Al, Fe, Co, Ni, and Zn Doped (110)-Oriented PBCO Thin Films

2020 ◽  
Vol 2020 ◽  
pp. 1-8
Author(s):  
Hom Kandel ◽  
Milko Iliev ◽  
Nathan Arndt ◽  
Tar-Pin Chen

We performed Raman scattering measurements and a comprehensive study of different types of Raman modes associated with phonon vibrations on pure and Ga, Al, Fe, Co, Ni, and Zn doped (110)-oriented PrBa2Cu3O7 (PBCO) thin films to identify the substitution of Cu (1) or Cu (2) ions in PBCO lattice. In Raman spectrum of (110)–oriented PBCO thin film, we observed four prominent Ag type Raman modes at ∼130 cm−1, ∼150 cm−1, ∼440 cm−1, and ∼520 cm−1 corresponding to Ba, Cu (2), O (2)–O (3) in-phase, and O (4) apical oxygen vibration along c-axis, respectively. The Raman mode of pure PBCO at ∼520 cm−1 softened on Ga, Al, Fe, and Co doped PBCO thin films while it remained unaffected on Zn and Ni doped PBCO thin films. We explain these results in the context of their correlation with Cu (1)–O (4) and Cu (2)–O (4) bond lengths. In addition, we observed a new Raman mode near 610 cm−1 in the Raman spectra of Ga, Al, Fe, and Co doped PBCO thin films, an infrared (IR) active mode that became Raman active when the symmetry was broken at the Cu-O chain site after the partial substitution of Cu (1) ion. Moreover, the “O (2)–O (3) in-phase Raman mode” near 440 cm−1 remained unaffected in Fe, Co, Ga, and Al doped PBCO thin films but softened in Zn and Ni doped PBCO thin films. Based on these results, we argue that Ga, Al, Fe, and Co ions replace Cu (1) ion at the Cu-O chain site, break the crystal symmetry, and produce disorder locally, whereas Zn and Ni ions replace Cu (2) ion at the CuO2 plane of the PBCO lattice structure.

2019 ◽  
Vol 220 ◽  
pp. 01002
Author(s):  
S.M. Arakelian ◽  
A.O. Kucherik ◽  
T.A. Khudaberganov ◽  
D.N. Bukharov

Nanocluster structures can be easily modified in necessary direction and by controlled way in femtonanophotonics experiments. The variation of the key topology parameters can result in new type of the quantum correlation states/size effect for charged particles. In our earlier experiments we studied laser-induced topological nanoclusters structures of different types in thin films with unique phenomena in electrophysics and optics (see [1-3]). A simple 2-steps mechanism for enhancement of quantum behavior (e.g. in electroconductivity) exists for different conditions. First, when inelastic length linelastic > acluster we have no incoherent electron-phonon (e-ph) scattering, i.e. the coherent process takes place. Second, when de Broglie wave length λdB ≡ ℓcoh < Λ, (acluster – cluster size , Λ – spatial period of nanoparticle distribution) the coherent tunneling without loss occurs, and a long-range order with interference of the states takes place in the medium due to lattice structure.


2018 ◽  
Vol 56 (1A) ◽  
pp. 93
Author(s):  
Anh Thanh Tuan Pham

In this study, gallium and hydrogen co-doped ZnO (HGZO) thin films were investigated. The films were deposited by sputtering from Ga-doped ZnO (GZO) ceramic target in hydrogen and argon plasma. The as-deposited HGZO films possess enhanced electron mobility of 48.6 cm2/Vs as compared to that of 39.4 cm2/Vs of GZO films, sputtered from the same target. Because of insignificant variation in crystallinity, this improvement is attributed to roles of hydrogen in crystalline lattice structure of the films. X-ray photoelectron spectroscopy (XPS) is employed as an essential technique for quantitative analyses and chemical binding states of films constituent elements. The roles of hydrogen are clarified through the binding states of Zn 2p, O 1s and Ga 3d. Obtained results suggest that the films are deposited more effectively in hydrogen plasma. Some point defects such as oxygen vacancies (VO), dangling bonds can be passivated in form of H+VOHO and O–H bonds. As a result, the reduction of scattering centers is indicated as a reason for the mobility improvement of the HGZO films.


Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2008 ◽  
Author(s):  
Xiaomei Guo ◽  
Kewen Kevin. Li ◽  
Xuesheng Chen ◽  
Yingyin Kevin. Zou ◽  
Hua Jiang

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO

2021 ◽  
pp. 118082
Author(s):  
Hai Ma ◽  
Xiaodan Wang ◽  
Feifei Chen ◽  
Jiafan Chen ◽  
Xionghui Zeng ◽  
...  

Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.


2001 ◽  
Vol 688 ◽  
Author(s):  
Rasmi R. Das ◽  
W. Pérez ◽  
P. Bhattacharya ◽  
Ram. S. Katiyar

AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.


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