scholarly journals Wideband power amplifier based on Wilkinson power divider for s-band satellite communications

2019 ◽  
Vol 8 (4) ◽  
pp. 1531-1536
Author(s):  
Mussa Mabrok ◽  
Zahriladha Zakaria ◽  
Tole Sutikno ◽  
Ammar Alhegazi
Keyword(s):  
Power Amplifier ◽  
Return Loss ◽  
Satellite Communication ◽  
Satellite Communications ◽  
Wireless Networking ◽  
Power Divider ◽  
Design System ◽  
Class A ◽  
Wilkinson Power Divider ◽  
Radar Satellite

This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)-10dB, gain (S21)10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.

scholarly journals A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

2018 ◽  
Vol 8 (5) ◽  
pp. 3882
Author(s):  
Amine Rachakh ◽  
Larbi El Abdellaoui ◽  
Jamal Zbitou ◽  
Ahmed Errkik ◽  
Abdelali Tajmouati ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Return Loss ◽  
Maximum Output Power ◽  
Maximum Power ◽  
Design System ◽  
Stability Factor ◽  
Maximum Output ◽  
Power Gain ◽  
Microstrip Technology

Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.

scholarly journals Modelling of Butter worth low pass Stepped Impedance Microstrip line Filter

2020 ◽  
Vol 8 (5) ◽  
pp. 1225-1229
Keyword(s):  
Communication Systems ◽  
Return Loss ◽  
Satellite Communication ◽  
Microwave Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Microwave Application ◽  
Low Pass ◽  
Radar Satellite ◽  
Low Pass Filters

This paper presents the design of a class of highly selective micro strip low pass filters. The proposed structure is considered for Stepped Impedance Low Pass Butterworth filter of order n=3 and n=5 with cut-off frequency 1.2 GHz and passband ripple of 3.01db [1]. The substrate FR4 having a dielectric constant 4.4 is considered for calculating the physical length of the micro strip low pass filter. The designing equation are solved using MATLAB Software and the results are analysed and compared using IE3D Simulator. The microwave filter is a building block that provides frequency selectivity in various microwave application like mobile, radar, satellite communication systems. The simulated results show the insertion loss and return loss of about -6.65 dB & - 55.49dB for N=3 and -7.23dB &-16.01 dB for N=5.Simulation has also been done for VSWR.

scholarly journals Wide band multi stage eight way Wilkinson power divider for defense applications

2018 ◽  
Vol 7 (3) ◽  
pp. 1304
Author(s):  
M Siva Charan ◽  
A Rajasekhar ◽  
K V. Venkateswara Rao ◽  
Ch Lakshmi Prasanna ◽  
Praveen Vummadisetty. Naidu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Microstrip Line ◽  
Return Loss ◽  
Wide Band ◽  
Simulation Software ◽  
Power Divider ◽  
Multi Stage ◽  
Wilkinson Power Divider ◽  
Equal Power ◽  
Good Agreement

In this paper, a compact 8 way microstrip line Wilkinson Power Divider (WPD) is designed and proposed. The equal power divider con-sists of multiple multi-section WPD’s with isolation resistors. By utilizing the multi-sections concept, a remarkably increase in the band-width is observed. In the design process, RT 5880 substrate is used with the thickness of 0.8 mm and dielectric constant of 2.2 and loss tangent of 0.0004. The simulated results such as return loss, insertion loss and isolation are plotted by using ADS simulation software and obtained results show good agreement. 

scholarly journals A Novel Analytical Design Technique for a Wideband Wilkinson Power Divider Using Dual-Band Topology

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6330
Author(s):  
Asif I. Omi ◽  
Rakibul Islam ◽  
Mohammad A. Maktoomi ◽  
Christine Zakzewski ◽  
Praveen Sekhar
Keyword(s):  
Transmission Lines ◽  
Return Loss ◽  
Power Divider ◽  
Dual Band ◽  
Design Technique ◽  
Fractional Bandwidth ◽  
Coupled Line ◽  
Analytical Design ◽  
Resonance Frequencies ◽  
Wilkinson Power Divider

In this paper, a novel analytical design technique is presented to implement a coupled-line wideband Wilkinson power divider (WPD). The configuration of the WPD is comprised of three distinct coupled-line and three isolation resistors. A comprehensive theoretical analysis is conducted to arrive at a set of completely new and rigorous design equations utilizing the dual-band behavior of commensurate transmission lines. Further, the corresponding S-parameters equations are also derived, which determine the wideband capability of the proposed WPD. To validate the proposed design concept, a prototype working at the resonance frequencies of 0.9 GHz and 1.8 GHz is designed and fabricated using 60 mils thick Rogers’ RO4003C substrate. The measured result of the fabricated prototype exhibits an excellent input return loss > 16.4 dB, output return loss > 15 dB, insertion loss < 3.30 dB and a remarkable isolation > 22 dB within the band and with a 15 dB and 10 dB references provide a fractional bandwidth of 110% and 141%, respectively.

Design of X-Ku Band Wilkinson Power Divider Using Synthetic Quasi-TEM Transmission Line

2014 ◽  
Vol 1044-1045 ◽  
pp. 287-290 ◽  
Author(s):  
Chih Chiang Chen ◽  
Jhen Jie Cin
Keyword(s):  
Transmission Line ◽  
Insertion Loss ◽  
Return Loss ◽  
Power Divider ◽  
Two Dimensional ◽  
Input Output ◽  
Line Structure ◽  
Wilkinson Power Divider ◽  
Conducting Strip ◽  
Ku Band

This work presents a miniaturized X-Ku band Wilkinson power divider (WPD), based on 0.18μm 1P6M CMOS foundry technology. The proposed two-dimensional transmission line, called a complementary-conducting-strip (CCS), replaces the conventional microstrip (MS) line structure. With this CCS structure, the occupying area of this novel divider is about 96 % smaller than that of the conventional MS WPD. The prototype occupies an area of only 345 μm by 360 μm without input/output (I/O) pads. The new WPD has an insertion loss of 4.9 dB, an isolation of 13 dB and a return loss 12 dB between 8 GHz and 18 GHz.

scholarly journals A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 311
Author(s):  
Peisen Cheng ◽  
Quan Wang ◽  
Wei Li ◽  
Yeting Jia ◽  
Zhichao Liu ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Power Divider ◽  
Total Power ◽  
Design System ◽  
Power Added Efficiency ◽  
Matching Networks ◽  
Compact Size ◽  
Doherty Power Amplifier

This paper proposes a broadband asymmetrical monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) using 0.25-μm gallium-nitride process with a compact chip size of 2.37 × 1.86 mm2 for 5G communication. It adopts an unequal Wilkinson’s power divider with a ratio of 2.5:1, where 71.5% of the total power is transferred to the main amplifier for higher gain. Different input matching networks are used to offset phase difference while completing impedance conversion. This design also applies a novel topology to solve the problem of large impedance transformer ratio (ITR) in conventional DPA, and it optimizes the ITR from 4:1 to 2:1 for wider band. Moreover, most of the components of the DPA including power divider and matching networks use lumped inductors and capacitors instead of long transmission line (TL) for a smaller space area. The whole circuit is designed and simulated using Agilent’s advanced design system (ADS). The simulated small-signal gain of DPA is 8–11 dB and the saturation output power is more than 39.5 dBm with 800 MHz band from 4.5 GHz to 5.3 GHz. At 6-dB output power back-off, the DPA demonstrates 38–41.3% power added efficiency (PAE), whereas 44–54% PAE is achieved at saturation power.

scholarly journals Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

2020 ◽  
pp. 166-170
Author(s):  
Syed Mudassir Hussain
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Efficiency ◽  
Satellite Communication ◽  
Design System ◽  
Passive Element ◽  
Power Efficient ◽  
Power Added Efficiency ◽  
High Power Amplifier ◽  
Simulation Results

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

scholarly journals Design of high power amplifier based on wilkinson power combiner for wireless communications

2021 ◽  
Vol 23 (1) ◽  
pp. 330
Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh
Keyword(s):  
Reflection Coefficient ◽  
Power Amplifier ◽  
Mobile Communications ◽  
High Power ◽  
Satellite Communication ◽  
Oxide Semiconductor ◽  
Design System ◽  
Power Combiner ◽  
Power Added Efficiency ◽  
High Power Amplifier

Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson power combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson power combineris used to combine two input powers toproduce 90W of power. Theproposed power amplifier is researched, designed and optimized usingadvanced design system(ADS) software.Experimental results show that thegain is 11.5 dB greater than at 2.45-3.0GHz frequency band and achieving maximum power gain of 13.5dB at 2.65GHz centre frequency; output power increased to 49.3dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)&lt;-10dB, output reflection coefficient (S22)&lt;-15dB. The designed amplifier can be used for4G, 5G mobile communications andS-band satellite communication.

scholarly journals A low profile compact three-way Wilkinson power divider with size reduction

2020 ◽  
Vol 71 (6) ◽  
pp. 419-422
Author(s):  
Ömer Kasar
Keyword(s):  
Circuit Design ◽  
Insertion Loss ◽  
Return Loss ◽  
Size Reduction ◽  
Power Divider ◽  
Center Frequency ◽  
Low Profile ◽  
Measurement Results ◽  
Wilkinson Power Divider ◽  
Curved Structure

AbstractIn this study, a three-way Wilkinson power divider (WPD) was proposed the circuit whose center frequency was selected as 1.9 GHz operates between 0.95-2.95 GHz frequencies and has a bandwidth of approximately 105%. The simulation and measurement results of the designed circuit were well aligned with each other below 10 dB return loss and 13 dB isolation. In addition, 0.4, 0.3 and 1.0 dB insertion loss were obtained in the output ways, respectively. The circuit is made more compact thanks to the curved structure of the output ways. It has been found that the proposed three-way power divider takes about 35% less space than the conventional circuit design.

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