Elevated Temperature Operation of 4H-SiC Nanoribbon Field Effect Transistors

2015 ◽  
Vol 15 (10) ◽  
pp. 7551-7554 ◽  
Author(s):  
Min Seok Kang ◽  
Susanna Yu ◽  
Sang Mo Koo
Keyword(s):  
Elevated Temperature ◽  
Plasma Etching ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Top Down ◽  
Channel Mobility ◽  
Channel Thickness ◽  
Effective Channel

We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various channel thickness (tch) of 100∼500 nm by a “top–down” approach, using a lithography and plasma etching process. We studied the dependence of the device transfer characteristics on the channel geometry. This demonstrated that fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on characteristics, and have a threshold voltage of −12 V, and a maximum transconductance value of 8.8 mS, which shows improved drain current degradation of the SiC nanoribbon FETs with tch =100 nm at elevated temperature. This can be attributed to the improved heat dissipation, enhanced channel mobility, and together with widening of effective channel thickness depletion induced.

Sub-threshold-like charge transport in organic field effect transistor: A study on effective channel thickness

2015 ◽  
Vol 29 (28) ◽  
pp. 1550172
Author(s):  
A. K. Kavala ◽  
A. K. Mukherjee
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thermionic Emission ◽  
Drain Current ◽  
Channel Length ◽  
Hole Injection ◽  
Emission Model ◽  
Short Channel ◽  
Channel Thickness ◽  
Effective Channel

A short channel organic field effect transistors (OFET) based on Pentacene, having channel length in the range of sub-micrometer, has been numerically modelled for low values of drain voltage. The output characteristics show a nonlinear concave increase of drain current for all values of gate voltages. This anomalous current-voltage behavior, which resembles sub-threshold characteristics of silicon FETs, shows a good match with earlier experimental reports on OFET at low drain voltages. The sub-threshold-like characteristics has been interpreted in light of thermionic-emission model because of the presence of hole injection barrier at drain (gold)/Pentacene interface. The associated analysis has facilitated to obtain a significant parameter, effective channel thickness [Formula: see text], for the first time in case of OFETs. It came out to be roughly 4 nm and 8 nm for experimental devices of poly(3-hexylthiophene-2,5-diyl) and Pentacene, respectively, while the numerically modelled device yielded a value of about 60 nm. Increase of [Formula: see text] with transverse gate electric field is also observed. Physical explanation of the observations is also presented.

Low-temperature operation of diamond surface-channel field-effect transistors

2002 ◽  
Vol 719 ◽  
Author(s):  
Minoru Tachiki ◽  
Hiroaki Ishizaka ◽  
Tokishige Banno ◽  
Toshikatsu Sakai ◽  
Kwang-Soup Song ◽  
...  
Keyword(s):  
Temperature Field ◽  
Low Temperature ◽  
Field Effect ◽  
Phonon Scattering ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Gate Insulator ◽  
Diamond Surface ◽  
Metal Insulator ◽  
Channel Mobility

AbstractCryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

Preparation of integrated chemical sensors using commercial VLSI technology

1987 ◽  
Vol 65 (5) ◽  
pp. 1072-1078 ◽  
Author(s):  
Paul G. Glavina ◽  
D. Jed Harrison
Keyword(s):  
Chemical Sensors ◽  
Linear Response ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Microelectrode Arrays ◽  
Drain Current ◽  
Cyclic Voltammetric ◽  
Design Rules ◽  
Vlsi Technology ◽  
Commercial Technology

The fabrication of ion sensitive field effect transistors (ISFET) and microelectrode arrays for use as chemical sensors using a commercial CMOS fabrication process is described. The commercial technology is readily available through the Canadian Microelectronics Corporation; however, several of the recommended design rules must be ignored in preparing chemical sensors using this process. The ISFET devices show near theoretical response to K+ in aqueous solution (55 mV slope) when coated with a K+ sensitive membrane. An extended gate ion sensitive device is presented which offers advantages in encapsulation of ISFET sensors. The source-drain current of both devices show a linear response to log [Formula: see text] in contrast to ISFETs previously reported that have high internal lead resistances. Al and poly-Si microelectrode arrays are fabricated commercially and then Pt is electrodeposited on the microelectrodes. The resulting arrays show good cyclic voltammetric response to Fe(CN)64− and Ru(NH3)63+ and are relatively durable.

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface

2008 ◽  
Vol 1 ◽  
pp. 061801 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Temporal Changes ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Drain Current ◽  
High Current ◽  
Analytical Treatment ◽  
Channel Mobility ◽  
Current Region ◽  
The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

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