Effect of Sputtering Power on the Structure and Optical Properties of Radio Frequency Sputtered-ZnS Thin Film

2017 ◽  
Vol 17 (7) ◽  
pp. 5046-5049 ◽  
Author(s):  
Dong Ryeol Kim ◽  
Donghyun Hwang ◽  
Chang-Sik Son ◽  
Young Guk Son
2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .


NANO ◽  
2012 ◽  
Vol 07 (06) ◽  
pp. 1250051 ◽  
Author(s):  
CHIN WEI LAI ◽  
SRIMALA SREEKANTAN

WO3 -incorporated C–TiO2 nanotubes were successfully fabricated using radio frequency sputtering technique. The effects of sputtering powers on the nanotube morphology, crystal structure, optical properties and visible photoresponse were investigated. Lattice substitution of WO3 species within the lattice of C–TiO2 nanotubes has an important function in maximizing the photocurrent generation. WO3 -incorporated C–TiO2 nanotubes exhibit good visible photoresponse compared with C–TiO2 nanotubes. The interpretation of interband states has an important function in improving photoinduced electron transport.


Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 645 ◽  
Author(s):  
Thao ◽  
Kuo ◽  
Tuan ◽  
Tuan ◽  
Vu ◽  
...  

Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100–400 °C and 90–150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge0.07GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 1019 cm−3, a carrier conductivity of 35.2 S∙cm−1 and mobility of 4 cm2·V−1∙s−1.


2013 ◽  
Vol 760-762 ◽  
pp. 776-779
Author(s):  
Shuang Li ◽  
Ming Chen ◽  
Feng Xiang Wang

In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.


2019 ◽  
Vol 15 (33) ◽  
pp. 71-77
Author(s):  
Mohammed K. Khalaf

Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.


2012 ◽  
Vol 7 (1) ◽  
pp. 55 ◽  
Author(s):  
Ki-Han Ko ◽  
Yeun-Ho Joung ◽  
Won Seok Choi ◽  
Mungi Park ◽  
Jaehyung Lee ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document