Complementary Metal Oxide Semiconductor Amplifier Behaviour Considering Different Points of Electromagnetic Interference Injection
2019 ◽
Vol 15
(4)
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pp. 361-367
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Keyword(s):
In this paper the CMOS amplifier behaviour has been further investigated respect to the previous works in the literature. An exhaustive scenario for the EMI pollution has been considered: the injected interferences can indeed directly reach the amplifier pins or can be coupled from the PCB ground. This is a key point for evaluating also the susceptibility from the EMI coupled to the output pin, which is disclosed as a critical point. The investigated topologies are basically derived from the Miller and the Folded Cascode, which are well-known and widely used by the CMOS analog designers; all of them are re-designed in UMC 180 nm CMOS process in order to have a fair comparison.
2011 ◽
Vol 98
(2)
◽
pp. 235-248
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2003 ◽
Vol 43
(1A/B)
◽
pp. L33-L35
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