scholarly journals Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 906
Author(s):  
Chea-Young Lee ◽  
Young-Hee Joo ◽  
Minsoo P. Kim ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Work Function ◽  
Surface Properties ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Film Surface ◽  
Etching Mechanism

Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

Etching Characteristics of Low-k Dielectric Using C5H2F10 Liquefied Gas Plasma for Mitigating of Global Warming Potential

2021 ◽  
Vol 13 (9) ◽  
pp. 1764-1770
Author(s):  
Yeonsik Choi ◽  
Jongchan Lee ◽  
Younghun Oh ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Film Surface ◽  
Chemical Compositions ◽  
Nanoscale Devices ◽  
Mixed Gas ◽  
Gas Plasma

In this work, we studied the etch characteristics and dielectric constant change of SiOC thin films by plasma etching for the fabrication of nanoscale devices to evaluate the C5H2F10 as alternative etching gas. We performed plasma etching of SiOC films with inductively coupled plasma using the CF4+X+O2 mixed gas, where X = CHF3 and C5H2F10. Plasma diagnosis such as optical emission spectroscopy and double Langmuir probe measurements were carried. We analyzed the chemical compositions of residues on the etched SiOC film surface using X-ray photoelectron spectroscopy. After the process, contact resistance was measured using the transmission line method to analyze the degree of polymer on the surface of the silicon. Ellipsometry were used to evaluate the change in the dielectric constant of the thin film due to plasma exposure. It was confirmed that the etched profile was more vertical than that of the CHF3 gas plasma, and the increase in the dielectric constant of the SiOC thin film by C5H2F10 gas plasma is less than that of CHF3 gas plasma. These results confirmed that C5H2F10 gas was a powerful alternative to CHF3 gas in semiconductor processing for the fabrication of nanoscale devices.

Molecular Dynamics Simulation of Aluminium Thin Film Surface Activated Bonding

2011 ◽  
Vol 486 ◽  
pp. 127-130
Author(s):  
Chao Cheng Chang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Dynamics ◽  
Surface Roughness ◽  
Bonding Strength ◽  
Film Surface ◽  
Dynamics Simulation ◽  
Thin Film Surface ◽  
Common Neighbour ◽  
Eam Potential

This study used molecular dynamics simulations with an embedded-atom method (EAM) potential to investigate the effect of surface roughness on the surface activated bonding (SAB) of aluminium thin films. The simulations started with the bonding process and followed by the tensile test for estimating bonding strength. By averaging the atomic stresses over the entire system, the stress-time curves for the bonded films under a tensile condition were predicted. Moreover, the evolution of the crystal structure in the local atomic order was examined by the common neighbour analysis. The simulated results show that the decrease in the surface roughness of thin film improves the bonding strength. The observed recrystallization processes inside the bonded thin films also reveal that the plastic deformation of the aluminium surface due to atomic attracting force compensates surface roughness.

scholarly journals Structure and morphology of nano-sized W-Ti/Si thin films

2006 ◽  
Vol 71 (8-9) ◽  
pp. 969-976 ◽  
Author(s):  
Suzana Petrovic ◽  
Borivoje Adnadjevic ◽  
Davor Perusko ◽  
Nada Popovic ◽  
Nenad Bundaleski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Phase Composition ◽  
Surface Segregation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Thin films were deposited by d.c. sputtering onto a silicon substrate. The influence of the W-Ti thin film thickness to its structural and morphological characteristics of a nano-scale were studied. The phase composition and grain size were studied by X-ray diffraction (XRD), while the surface morphology and surface roughness were determined by scanning tunneling microscopy (STM). The analysis of the phase composition show that the thin films had a polycrystalline structure - they were composed of a b.c.c. W phase with the presence of a h.c.p. Ti phase. The XRD peak in the scattering angle interval of 38?-43? was interpreted as an overlap of peaks corresponding to the W(110) and Ti(101) planes. The grain size and the mean surface roughness both increase with the thikness of the thin film. The chemical composition of the thin film surface was also analyzed by low energy ions scattering (LEIS). The results show the surface segregation of titanium, as well as a substantial presence of oxygen an the surface.

scholarly journals Surface Investigation of Ni81Fe19 Thin Film: Using ARXPS for Thickness Estimation of Oxidation Layers

Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 2061
Author(s):  
Zongsheng He ◽  
Ziyu Li ◽  
Xiaona Jiang ◽  
Chuanjian Wu ◽  
Yu Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Electron Beam Evaporation ◽  
Surface Oxide Layer ◽  
Atmospheric Conditions ◽  
Oxidation Layers

This work demonstrates the dependence between magnetic properties and the thickness of NiFe thin films. More importantly, a quantitative study of the surface composition of NiFe thin film exposed to atmospheric conditions has been carried out employing angle-resolved X-ray photoelectron spectroscopy (ARXPS). In this study, we fabricated Ni81Fe19 (NiFe) thin films on Si (100) substrate using electron beam evaporation and investigated their surface morphologies, magnetic properties, and the thickness of the surface oxide layer. The coexistence of metallic and oxidized species on the surface are suggested by the depth profile of ARXPS spectra. The thickness of the oxidized species, including NiO, Ni(OH)2, Fe2O3, and Fe3O4, are also estimated based on the ARXPS results. This work provides an effective approach to clarify the surface composition, as well as the thickness of the oxide layer of the thin films.

scholarly journals Investigation of thin films for fabrication of Nb/AlN/NbN tunnel junctions and microstrip lines of NbTiN-SiO2-Al.

2021 ◽  
Vol 13 (4) ◽  
pp. 419-426
Author(s):  
Artem M. Chekushkin ◽  
◽  
Lyudmila V. Filippenko ◽  
Vadim V. Kashin ◽  
Mikhail Yu. Fominskiy ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Plasma Etching ◽  
Surface Profile ◽  
Film Surface ◽  
Single Layer ◽  
Tunnel Barrier ◽  
Atomic Force ◽  
Barrier Formation

The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Preparation and Characterization of SnO2/WO3/MWCNT Nanocomposite Thin Film for NO2 Gas Sensor

2010 ◽  
Vol 129-131 ◽  
pp. 99-103
Author(s):  
Wei Lin ◽  
Shi Zhen Huang ◽  
Wen Zhe Chen
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Photoelectron Spectroscopy ◽  
Mixed Oxides ◽  
Surface Composition ◽  
Chemical Elements ◽  
Film Material ◽  
Nanocomposite Thin Film ◽  
Oxide Compound ◽  
Thin Film Material

A novel nanocomposite thin film material of SnO2/WO3 metal oxide compound doped by multi-walled carbon nanotubes (MWCNT) and its corresponding gas sensor were prepared by radio frequency (RF) reactive magnetron sputtering. The surface composition and chemical elements of the thin film material were respectively analyzed and validated by X-ray diffraction (XRD) and photoelectron spectroscopy (XPS). The influencing factors of gas sensing properties were studied and the test results of gas sensor were analyzed. The results indicated that the detection using the composite material gas sensors for low concentration NO2 toxic gas could be greatly improved by MWCNTs which were doped on the mixed oxides matrix. A possible mechanism explaining the behaviour of the thin film gas sensor was introduced.

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