scholarly journals Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 637
Author(s):  
Wei-Kai Wang ◽  
Sung-Yu Wang ◽  
Kuo-Feng Liu ◽  
Pi-Chuen Tsai ◽  
Yu-Hao Zhang ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Chemical Compositions ◽  
Plasma Irradiation ◽  
Fluorocarbon Plasma ◽  
Sulfur Fluoride ◽  
Pre Treatment ◽  
Sputter Deposited

Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.

Etching Characteristics of Low-k Dielectric Using C5H2F10 Liquefied Gas Plasma for Mitigating of Global Warming Potential

2021 ◽  
Vol 13 (9) ◽  
pp. 1764-1770
Author(s):  
Yeonsik Choi ◽  
Jongchan Lee ◽  
Younghun Oh ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Film Surface ◽  
Chemical Compositions ◽  
Nanoscale Devices ◽  
Mixed Gas ◽  
Gas Plasma

In this work, we studied the etch characteristics and dielectric constant change of SiOC thin films by plasma etching for the fabrication of nanoscale devices to evaluate the C5H2F10 as alternative etching gas. We performed plasma etching of SiOC films with inductively coupled plasma using the CF4+X+O2 mixed gas, where X = CHF3 and C5H2F10. Plasma diagnosis such as optical emission spectroscopy and double Langmuir probe measurements were carried. We analyzed the chemical compositions of residues on the etched SiOC film surface using X-ray photoelectron spectroscopy. After the process, contact resistance was measured using the transmission line method to analyze the degree of polymer on the surface of the silicon. Ellipsometry were used to evaluate the change in the dielectric constant of the thin film due to plasma exposure. It was confirmed that the etched profile was more vertical than that of the CHF3 gas plasma, and the increase in the dielectric constant of the SiOC thin film by C5H2F10 gas plasma is less than that of CHF3 gas plasma. These results confirmed that C5H2F10 gas was a powerful alternative to CHF3 gas in semiconductor processing for the fabrication of nanoscale devices.

scholarly journals Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 906
Author(s):  
Chea-Young Lee ◽  
Young-Hee Joo ◽  
Minsoo P. Kim ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Work Function ◽  
Surface Properties ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Film Surface ◽  
Etching Mechanism

Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

scholarly journals Surface Segregation of Amphiphilic PDMS-Based Films Containing Terpolymers with Siloxane, Fluorinated and Ethoxylated Side Chains

Coatings ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 153 ◽  
Author(s):  
Elisa Martinelli ◽  
Elisa Guazzelli ◽  
Antonella Glisenti ◽  
Giancarlo Galli
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Segregation ◽  
Water Environment ◽  
Film Surface ◽  
Side Chain ◽  
Chemical Compositions ◽  
Side Chains ◽  
Air Interface ◽  
High Enrichment ◽  
Surface Active

(Meth)acrylic terpolymers carrying siloxane (Si), fluoroalkyl (F) and ethoxylated (EG) side chains were synthesized with comparable molar compositions and different lengths of the Si and EG side chains, while the length of the fluorinated side chain was kept constant. Such terpolymers were used as surface-active modifiers of polydimethylsiloxane (PDMS)-based films with a loading of 4 wt%. The surface chemical compositions of both the films and the pristine terpolymers were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS) at different photoemission angles. The terpolymer was effectively segregated to the polymer−air interface of the films independent of the length of the constituent side chains. However, the specific details of the film surface modification depended upon the chemical structure of the terpolymer itself. The exceptionally high enrichment in F chains at the surface caused the accumulation of EG chains at the surface as well. The response of the films to the water environment was also proven to strictly depend on the type of terpolymer contained. While terpolymers with shorter EG chains appeared not to be affected by immersion in water for seven days, those containing longer EG chains underwent a massive surface reconstruction.

Effect of 2-phenoxyethanol pre-treatment on structure and adhesion properties of thermotropic liquid crystal polyarylate fibers

2021 ◽  
pp. 004051752098588
Author(s):  
Xin Chen ◽  
Bingqian Liu ◽  
Dan Sheng ◽  
Honghui Xia ◽  
Heng Pan ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Chemical Compositions ◽  
Adhesive Properties ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Thermotropic Liquid Crystal ◽  
Peeling Strength ◽  
Pre Treatment

This study investigated the surface modification of thermotropic liquid crystal polyarylate (TLCP) fibers by 2-phenoxyethanol pre-treatment, specifically, whether it enhanced their interfacial adhesive properties. The surface chemical compositions and microstructures of both control and 2-phenoxyethanol pre-treated TLCP fibers were characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. Furthermore, thermal, dyeing, and adhesion properties of both control and 2-phenoxyethanol pre-treated fibers were compared by thermogravimetric analysis, colorimetry, and universal material testing system, respectively. The results indicated that 2-phenoxyethanol pre-treatment increased the surface-anchored oxygen atom amount: the oxygen to carbon atomic ratio at the surface of the TLCP fibers increased from 0.17 to 0.22. However, 2-phenoxyethanol pre-treatment showed almost no effect on the thermal stability and mechanical properties of the TLCP fibers. The peeling strength of the 2-phenoxyethanol pre-treated TLCP fabric was around twice that of the control TLCP fabric.

Fabrication and Characterization of Lanthanum Treated Carboxyl-Graphene Oxide Self-Assembled Composite Film on Silicon Substrate

2016 ◽  
Vol 693 ◽  
pp. 566-575 ◽  
Author(s):  
Da Shu ◽  
Hong Gao ◽  
Da Bin Zhang
Keyword(s):  
Graphene Oxide ◽  
Silicon Substrate ◽  
Photoelectron Spectroscopy ◽  
Multilayer Film ◽  
Film Surface ◽  
Chloroacetic Acid ◽  
Chemical Compositions ◽  
Hydroxyl Groups ◽  
Water Contact ◽  
Micro Electro Mechanical Systems

The admixture of graphene oxide (GO) sheets and chloroacetic acid were ultrasonic treated. As a result, epoxy and hydroxyl groups which existed onto GO sheets were transformed into carboxyl groups. Then, the carboxyl-GO sheets were assembled on silicon substrate by taking use of 3-aminopropyltriethoxysilane (APS) as an intermediate coupling agent (marked as APS-GO). Furthermore, La elements were deposited on the APS-GO by means of chemisorption to form multilayer film (APS-GO-La). Chemical compositions, surface morphologies, and microstructures were investigated by using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and water contact angle (WCA). Experimental results suggested that carboxyl-GO sheets distributed homogeneously on Si substrate. Results also indicated that lanthanum elements can react with the-COOH functional groups of GO film and be adsorbed on the APS-GO film surface. The prepared APS-GO-La multilayer film showed low surface free energy, which has potential applications in nano/micro electro-mechanical systems (N/MEMS).

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

Plasma Etching of SiON Films Using Liquefied C7F14 Gas as Perfluorocarbon Alternative

2020 ◽  
Vol 12 (5) ◽  
pp. 641-646
Author(s):  
Jaemin Lee ◽  
Jihun Kim ◽  
Junmyung Lee ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Film Surface ◽  
Optical Emission ◽  
Mixed Gas ◽  
Force Microscopy ◽  
Physicochemical Changes ◽  
Etching Profile ◽  
Langmuir Probe Measurements

In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where X = CHF3, C4F8, or C7F14, and examined the etching characteristics of the films (e.g., etching rate, etching profile, and selectivity over Si). Using contact angle goniometry, atomic force microscopy, and X-ray photoelectron spectroscopy, we analyzed the physicochemical changes in the etched SiON film surface. Moreover, optical emission spectroscopy and double Langmuir probe measurements were carried out for plasma diagnosis. Compared with the conventional CHF3 and C4F8 mixed plasma, the C7F14 mixed plasma exhibited a more perpendicular etching profile with higher SiON/Si selectivity and a smoother surface.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

scholarly journals Structure and Characterization of TiC/GLC Multilayered Films with Various Bilayers Periods

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 787
Author(s):  
Weiqi Wang ◽  
Xiaoming Ling ◽  
Rui Wang ◽  
Wenhao Nie ◽  
Li Ji ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
Closed Field ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Sputtering Deposition ◽  
X Ray ◽  
Mechanical And Tribological Properties ◽  
Self Organizing

The spontaneously self-organizing multilayered graphite-like carbon (denoted as GLC) /TiC films with various bilayer periods in the range of 13.3–17.5 nm were deposited on silicon and 1Cr18Mn8Ni5N stainless steel substrates using closed field magnetron sputtering deposition facility. The microstructures and chemical compositions of the prepared multilayered films were characterized by scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy respectively. The self-organizing multilayered structures in all of the films consisted of titanium carbide layers and sp2-rich carbon layers periodically alternate arrangement. The TiC contents and bilayer periods of the multilayered films can be controlled by means of adjusting of sputtering current of graphite target. Furthermore, the mechanical and tribological performances of the prepared films were appraised by nano-indentor, scratch measures, and ball-on-plate tribometer respectively. The results indicated that multilayer structure endowed the as-deposited TiC/GLC films outstanding mechanical and tribological properties, especially the multilayer film with 15.9 nm bilayer period deposited at 10 A sputtering current showed the excellent adhesion strength and hardness; Simultaneously it also exhibited the lowest average friction coefficient in the humid environment owing to its high content of sp2 hybrid carbon.

X-Ray Photoelectron Spectroscopy Study on Reduction of Graphene Oxide with Hydrazine Hydrate

2011 ◽  
Vol 287-290 ◽  
pp. 539-543 ◽  
Author(s):  
Wen Shi Ma ◽  
Jun Wen Zhou ◽  
Xiao Dan Lin
Keyword(s):  
Graphene Oxide ◽  
Hydrazine Hydrate ◽  
Photoelectron Spectroscopy ◽  
Reduction Rate ◽  
Reduction Reaction ◽  
Chemical Compositions ◽  
Total Oxygen ◽  
Graphene Oxides ◽  
X Ray ◽  
Oxygen Groups

Graphene oxide was prepared through Hummers' method，then different reduced graphenes were prepared via reduction of graphene oxide with hydrazine hydrate for 1h、12h and 24h. X-ray photoelectron spectroscopy (XPS) was used for the characterization of graphene oxide and the reduced graphenes. The variation of the contents of carbon in carbon and oxygen functional groups and chemical compositions of graphene oxides were investigated through analysis the content of different carbon atoms in different reduced graphenes. The results showed that the reduction reaction was very fast in the first 1 h, the content of total oxygen bonded carbon atoms decreased from 83.6% to 22.1%, and then after the reduction rate became very slow. After 12h, the content of total oxygen bonded carbon atom is 19.56%, only 2.54% lower than that of 1h’s. At the same time, C-N was introduced in the graphene oxides; this increased the stereo-hindrance for hydrazine hydrate attacking the C-Oxygen groups, thus reduced the reduction rate. After reduction for 24h, there still exists 16.4% oxygen bonded carbon atoms and the total conversion ratio of graphene approaches 70%.

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