Experimental investigation and empirical modelling of thermal and drive current effect on optical performance of commercial LEDs

2020 ◽  
pp. 147715352097693
Author(s):  
AN Padmasali ◽  
SG Kini
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Operating Conditions ◽  
Junction Temperature ◽  
Optimum Operating ◽  
Current Effect ◽  
Drive Current ◽  
Light Emitting ◽  
Empirical Modelling ◽  
Output Performance

Light-emitting diode is the most dominant lighting technology, and lumen output performance is dependent on junction temperature and operating drive current. An experimental analysis is performed to study the thermal and drive current effect on lumen output, and an empirical model is developed to determine the optimum operating conditions of temperature and drive current so as to obtain a maximum lumen output profile. Three commercially available light-emitting diode down-lighter’s light-emitting diodes are chosen for the study. The investigation reveals that there exists an optimum drive current at which lumen output is maximum, and it has a linear relation with junction temperature. Pulse-soak testing was performed to study the deviations of pulsed and continuous operation of drive current to understand the performance of light-emitting diodes. The work helps light-emitting diode luminaire manufacturers to design a controlled power electronic circuit so as to maximize the lumen output effectively and accurately.

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

Light-emitting diodes as light sources for spectroscopy: Sensitivity to temperature

2017 ◽  
Vol 25 (6) ◽  
pp. 416-422 ◽  
Author(s):  
Clinton J Hayes ◽  
Kerry B Walsh ◽  
Colin V Greensill
Keyword(s):  
Ambient Temperature ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Junction Temperature ◽  
Effect Of Temperature ◽  
Light Sources ◽  
Spectral Variation ◽  
Light Emitting ◽  
Full Intensity

Understanding of light-emitting diode lamp behaviour is essential to support the use of these devices as illumination sources in near infrared spectroscopy. Spectral variation in light-emitting diode peak output (680, 700, 720, 735, 760, 780, 850, 880 and 940 nm) was assessed over time from power up and with variation in environmental temperature. Initial light-emitting diode power up to full intensity occurred within a measurement cycle (12 ms), then intensity decreased exponentially over approximately 6 min, a result ascribed to an increase in junction temperature as current is passed through the light-emitting diode. Some light-emitting diodes displayed start-up output characteristics on their first use, indicating the need for a short light-emitting diode ‘burn in’ period, which was less than 24 h in all cases. Increasing the ambient temperature produced a logarithmic decrease in overall intensity of the light-emitting diodes and a linear shift to longer wavelength of the peak emission. This behaviour is consistent with the observed decrease in the IAD Index (absorbance difference between 670 nm and 720 nm, A670–A720) with increased ambient temperature, as measured by an instrument utilising light-emitting diode illumination (DA Meter). Instruments using light-emitting diodes should be designed to avoid or accommodate the effect of temperature. If accommodating temperature, as light-emitting diode manufacturer specifications are broad, characterisation is recommended.

Thermal Characteristics of High-Power LED Packages with Dissipation Film

2013 ◽  
Vol 397-400 ◽  
pp. 1767-1771
Author(s):  
Cheng Yi Hsu ◽  
Yu Li Lin
Keyword(s):  
High Power ◽  
Diamond Film ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Thermal Characteristics ◽  
Large Change ◽  
Junction Temperature ◽  
Conduction Model ◽  
Element Analysis ◽  
Light Emitting

A simple, fast, and reliable characterization method for measuring junction temperature (Tj) on high power GaN-based light emitting diodes (LED) was presented in this study. Thermal characteristics of high power Light-emitting-diode have been analyzed by using a three-dimensional thermal conduction model. Maximum operation temperature has also been calculated. The induced thermal behaviors of the best package processes for LED device with diamond film were investigated by finite element analysis (FEA) and by experimental measurement. The large change of forward operation voltage with temperature in light emitting diodes is advantageously used to measure junction temperature. Using this method, junction temperature (Tj) of LED under various structures and chip mounting methods was measured. It was found that the junction temperature can be reduced considerably by using diamond film substrates to replace sapphire substrate. In this study, the junction temperature can be decreased by about 14.3% under 1.5W power and decreased by about 15.9% under 1W power for 1mm square die. The thermal resistance (RT) can be measured to be 14.8°C/W under 1.5W power and 16.6°C/W under 1.W power.

scholarly journals Parametric Compact Thermal Models of Power LEDs

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1724 ◽  
Author(s):  
Marcin Janicki ◽  
Tomasz Torzewicz ◽  
Przemysław Ptak ◽  
Tomasz Raszkowski ◽  
Agnieszka Samson ◽  
...  
Keyword(s):  
Printed Circuit Boards ◽  
Light Emitting Diodes ◽  
Operating Conditions ◽  
Junction Temperature ◽  
Light Sources ◽  
Cold Plate ◽  
Circuit Boards ◽  
Thermal Models ◽  
Light Emitting ◽  
Main Factor

Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and various preset cold plate temperatures. These data allowed the computation of optical and real heating power values and consequently the generation of compact thermal models in the form of Foster and Cauer RC ladders. This also rendered possible the analysis of the influence of the considered factors on the compact model element values and their parametrization. The resulting models yield accurate values of diode junction temperature in most realistic operating conditions and they can be easily included in multidomain compact models of power light emitting diodes.

A Technique for the Direct Measurement of the Junction Temperature in Power Light Emitting Diodes

2020 ◽  
pp. 1-1
Author(s):  
Demetrio Iero ◽  
Massimo Merenda ◽  
Sonia Polimeni ◽  
Riccardo Carotenuto ◽  
Francesco G. Della Corte
Keyword(s):  
Direct Measurement ◽  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting

scholarly journals Unravelling the electron injection/transport mechanism in organic light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  
Keyword(s):  
Work Function ◽  
Transport Mechanism ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Materials Used

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.

scholarly journals LED Rail Signals: Full Hardware Realization of Apparatus with Independent Intensity by Temperature Changes

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1291
Author(s):  
Giuseppe Schirripa Schirripa Spagnolo ◽  
Fabio Leccese
Keyword(s):  
Temperature Sensor ◽  
Energy Efficient ◽  
Light Emitting Diode ◽  
Junction Temperature ◽  
Light Emitting ◽  
Temperature Changes ◽  
Wide Range ◽  
International Regulations ◽  
Long Lifetime ◽  
Set Up

Nowadays, signal lights are made using light-emitting diode arrays (LEDs). These devices are extremely energy efficient and have a very long lifetime. Unfortunately, especially for yellow/amber LEDs, the intensity of the light is closely related to the junction temperature. This makes it difficult to design signal lights to be used in naval, road, railway, and aeronautical sectors, capable of fully respecting national and international regulations. Furthermore, the limitations prescribed by the standards must be respected in a wide range of temperature variations. In other words, in the signaling apparatuses, a system that varies the light intensity emitted according to the operating temperature is useful/necessary. In this paper, we propose a simple and effective solution. In order to adjust the intensity of the light emitted by the LEDs, we use an LED identical to those used to emit light as a temperature sensor. The proposed system was created and tested in the laboratory. As the same device as the ones to be controlled is used as the temperature sensor, the system is very stable and easy to set up.

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

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