scholarly journals Η ασυμπτωματική θεωρία ακραίων τιμών και η στατιστική ανάλυση ισχύος κυκλωμάτων CMOS VLSI

2002 ◽  
Author(s):  
Νέστορας Ευμορφόπουλος

Ever since their birth in the late 60s, the integrated circuits based on complementary CMOS technology have dominated the VLSI scene, primarily due to their main distinctive feature which is the low power dissipation. In recent years, however, the ongoing increase in the number of processing elements (in perfect agreement with Moore’s law) and operating frequency, coupled with the decrease in feature size and supply voltage, have augmented the amounts of dissipated power and accentuated the associated reliability problems. Addressing these issues is compulsory and presents one of the biggest challenges facing the integrated circuit industry in the foreseeable future. This has brought forward the need for tools and methods that perform efficient analysis and estimation of the overall power requirements of a particular integrated circuit during the design phase. In contrast, however, to the other two basic design parameters, namely the delay and occupation area, the quantity of power is extremely difficult to estimate as it depends on the specific input vectors that inflict a transition in the circuit’s logic state. Since, as is well known, the total number of input vectors bears an exponential relationship with the number of primary inputs and is therefore prohibitively large to conduct an exhaustive examination, the only viable solution is to employ statistical techniques which transfer the burden from a large population to a much smaller sample. The component of power in CMOS circuits manifests in two different forms, that is the average and maximum power, both of which demand separate approaches for their estimation and have their own special significance within the broader design framework. In particular, the average power is the form that primarily defines the rating of power dissipation in a specified circuit, whereas the maximum power is related with arguably the biggest existing reliability problem which is the voltage drop on the power supply wires. The estimation of average power from a statistical viewpoint can be reduced to the classic problem of estimation of a statistical average (i.e. the average of a statistical population) on the basis of the central limit theorem (CLT), and as such, it is largely considered as a resolved matter in the literature. On the other hand, however, the estimation of maximum power still remains an open issue as the corresponding problem of estimation of a population maximum falls into a relatively unexploited area of statistics that is known as (asymptotic) extreme value theory. This particular theory is considerably more complex and not as readily applicable as the theory behind the CLT, but what is more important, it involves certain subtle points which if not addressed properly could seriously affect the overall estimation results. The present thesis attempts to fill this gap with a primary target that is twofold. At first, the development of a sound and efficient method for the estimation of a general population maximum using the aforementioned extreme value theory is pursued, while secondly this universal method is applied on the estimation of maximum power in CMOS VLSI circuits. The method being developed is mathematically rigorous and based on a solid theoretical foundation, while in order to successfully deal with the intricate points of the theory incorporates some unique concepts and techniques which appear for the first time in the literature. The whole development is carried out in full comparison with the established approach for estimation of a statistical average and its respective application to average power estimation. Apart from providing an effective solution to the problem of maximum power estimation, the proposed method boasts some very attractive properties such as relatively small number of required input vectors that does not depend on the circuit size or complexity, “a priori” specifiable error and confidence levels for the final estimate, remarkably simple algorithmic implementation that does not include time- consuming iterative loops, and lastly simulation-based operation which ensures the necessary accuracy in the assembly of power data as well as easy incorporation within any design flow for digital integrated circuits. All the above are being supported by experimental results upon a set of standard benchmark circuits. Moreover, the necessary guidelines for the exploitation of the method to the addressing of the voltage drop problem are given, thus laying the foundation for future work in the area.

2015 ◽  
Vol 821-823 ◽  
pp. 859-862 ◽  
Author(s):  
E. Ramsay ◽  
James Breeze ◽  
David T. Clark ◽  
A. Murphy ◽  
D. Smith ◽  
...  

This paper presents the characteristics and performance of a range of Silicon Carbide (SiC) CMOS integrated circuits fabricated using a process designed to operate at temperatures of 300°C and above. The properties of Silicon carbide enable both n-channel and p-channel MOSFETS to operate at temperatures above 400°C [1] and we are developing a CMOS process to exploit this capability [4]. The operation of these transistors and other integrated circuit elements such as resistors and contacts is presented across a temperature range of room temperature to +400°C. We have designed and fabricated a wide range of test and demonstrator circuits. A set of six simple logic parts, such as a quad NAND and NOR gates, have been stressed at 300°C for extended times and performance results such as propagation delay drive levels, threshold levels and current consumption versus stress time are presented. Other circuit implementations, with increased logic complexity, such as a pulse width modulator, a configurable timer and others have also been designed, fabricated and tested. The low leakage characteristics of SiC has allowed the implementation of a very low leakage analogue multiplexer showing less than 0.5uA channel leakage at 400°C. Another circuit implemented in SiC CMOS demonstrates the ability to drive SiC power switching devices. The ability of CMOS to provide an active pull up and active pull down current can provide the charging and discharging current required to drive a power MOSFET switch in less than 100ns. Being implemented in CMOS, the gate drive buffer benefits from having no direct current path from the power rails, except during switching events. This lowers the driver power dissipation. By including multiple current paths through independently switched transistors, the gate drive buffer circuit can provide a high switching current and then a lower sustaining current as required to minimize power dissipation when driving a bipolar switch.


2000 ◽  
Vol 22 (3) ◽  
pp. 215-233 ◽  
Author(s):  
N. E. Evmorfopoulos ◽  
J. N. Avaritsiotis

A method for maximum power estimation in CMOS VLSI circuits is proposed. The method is based on extreme value theory and allows for the calculation of the upper end point of the probability distribution which is followed by the instantaneous power drawn from the supply bus. The main features of the method are the relatively small and circuitin-dependent subset of input patterns required for accurate prediction of maximum power and its simulative nature which ensures that no over-simplifying assumptions are made. Application of the proposed method to eight distributions, which come close to the behavior of power consumption in VLSI circuits, proved its superior capabilities with respect to existing methods.


2017 ◽  
Vol 27 (02) ◽  
pp. 1850034 ◽  
Author(s):  
Yaseer Arafat Durrani

Low-power consumption in three-dimensional integrated circuits (3D IC) design is becoming an important concern that cannot be neglected. The multiple layers/dies are stacked in 3D IC and communicate with each other through-silicon-vias (TSVs) to work as a single device in order to achieve high performance with minimum power dissipation. This paper demonstrates high-level power modeling approach for the power estimation of homogenous integration of Network-on-Chip (NoC)-based mesh architecture in 3D IC design. The preliminary experimental work of power model is divided into two major parts of the design. The first part estimates the power of NoC architecture on each stack separately and the second estimates the power dissipation of the uniformly distributed TSVs and input/output (I/O) pads. The model uses a linear function to estimate the average power dissipation. For an entire IC design, the average power is extracted by simple addition of all power estimation results of the model. The design is operated with multiple frequencies to find the most appropriate frequency to minimize power dissipation. In experiments, the average maximum error is estimated 18.03%.


2018 ◽  
Vol 11 (2) ◽  
pp. 25-28
Author(s):  
Aylapogu Pramod Kumar ◽  
B.L.V.S.S Aditya ◽  
G. Sony ◽  
Ch. Prasanna ◽  
A. Satish

Abstract With a rapid growth in semiconductor Industry, complex applications are being implemented using small size chips, with the use of Complementary Metal Oxide Semi-Conductors (CMOS). With the introduction of new Integrated Circuit (IC) technology, the speed of the circuits has been increased by around 30%. But it was observed that for every two years, the power dissipation of a circuit doubles. The main reason for this power dissipation is leakage currents in the circuit. To reduce these leakage currents, we can reduce the width of the device. In addition to this, we can use lector techniques that use Leakage Control Transistors (LCT) and High Threshold Leakage Control Transistors (HTLCT).In this paper; we present a circuit technique that uses 130 nano-meter CMOS VLSI circuits that use two extra transistors to mitigate the leakage currents. The proposed technique overcomes the limitations posed by the existing methods for leakage reductions an average leakage reductions is 82.5%.The estimation of power and delay will be discussed using LCT’s and HTLCT’s.


Author(s):  
N. Geetha Rani ◽  
C. Soundarya Lahari ◽  
G. Revathi ◽  
K. Chandrika ◽  
G. Riya

In recent years, due to development of integrated circuits technology, power is being given comparable weight to area and speed considerations. The power consumed for any given function in any complementary metal-oxide-semiconductor (CMOS) circuit must be reduced for either of the two different reasons. One is to reduce heat dissipation in order to allow a large density of functions to be incorporated on an Integrated Circuit (IC) chip. Any amount of power dissipation is worthwhile as long as it does not degrade overall circuit performance. The other reason is to save energy in battery operated instruments like in electronic watches where average power is in microwatts. Low power is the major issue not only in portable devices but also in non-portable devices. So, it is apparent that one has to resolve low power design methodologies for the design of high throughput, low power digital systems. By using this SVL technique using DRAM we are going to reduce the leakage currents and also improves the performance of the circuit.


Author(s):  
Pramod Kumar Aylapogu ◽  
B.L.V.S.S Aditya ◽  
G. Sony ◽  
Ch Prasanna ◽  
A Satish ◽  
...  

<p>With a rapid growth in semiconductor Industry, complex applications are being implemented using small size chips, with the use of Complementary Metal Oxide Semi-Conductors (CMOS). With the introduction of new Integrated Circuit (IC) technology, the speed of the circuits has been increased by around 30%. But it was observed that for every two years, the power dissipation of a circuit doubles. The main reason for this power dissipation is leakage currents in the circuit. To reduce these leakage currents, we can reduce the width of the device. In addition to this, we can use lector techniques that use Leakage Control Transistors (LCT) and High Threshold Leakage Control Transistors(HTLCT). In this paper, we present a circuit technique that uses 130 nano-meter CMOS VLSI circuits that use two extra transistors to mitigate the leakage currents. The estimation of power and delay will be discussed using LCT’s and HTLCT’s</p>


2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig

An overview of the thermal management landscape with focus on heat dissipation from three-dimensional (3D) chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side, and finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely: (1) dual-side cooling, implemented by a thermally active interposer, (2) interlayer cooling with four-port fluid delivery and drainage at 100 kPa pressure drop, and (3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low through-silicon-via (TSV) heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active integrated circuit (IC) area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29 kW/cm3, respectively.


Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


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