Power Analysis Approach for NoC-based Homogeneous Stacked 3D ICs

2017 ◽  
Vol 27 (02) ◽  
pp. 1850034 ◽  
Author(s):  
Yaseer Arafat Durrani

Low-power consumption in three-dimensional integrated circuits (3D IC) design is becoming an important concern that cannot be neglected. The multiple layers/dies are stacked in 3D IC and communicate with each other through-silicon-vias (TSVs) to work as a single device in order to achieve high performance with minimum power dissipation. This paper demonstrates high-level power modeling approach for the power estimation of homogenous integration of Network-on-Chip (NoC)-based mesh architecture in 3D IC design. The preliminary experimental work of power model is divided into two major parts of the design. The first part estimates the power of NoC architecture on each stack separately and the second estimates the power dissipation of the uniformly distributed TSVs and input/output (I/O) pads. The model uses a linear function to estimate the average power dissipation. For an entire IC design, the average power is extracted by simple addition of all power estimation results of the model. The design is operated with multiple frequencies to find the most appropriate frequency to minimize power dissipation. In experiments, the average maximum error is estimated 18.03%.

Author(s):  
Je-Hyoung Park ◽  
Ali Shakouri ◽  
Sung-Mo Kang

CMOS VLSI technology has been facing various technical challenges as the feature sizes scale down. To overcome the challenges imposed by the shrink of the conventional on-chip interconnect system in IC chips, alternative interconnect technologies are being developed: one of them is three dimensional chips (3D ICs). Even though 3D IC technology is a promising solution for interconnect bottlenecks, thermal issues can be exacerbated. Thermal-aware design and optimization will be more critical in 3D IC technology than conventional planar IC technology, and hence accurate temperature profiles of each active layer will become very important. In 3D ICs, temperature profile of one layer depends not only on its own power dissipation but also on the heat transferred from other layers. Thus, thermal considerations for 3D ICs need to be done in a holistic manner even if each layer can be designed and fabricated individually. Conventional grid-based temperature computation methods are accurate but are computationally expensive, especially for 3D ICs. To increase computational efficiency, we developed a matrix convolution technique, called Power Blurring (PB) for 3D ICs. The temperature resulting from any arbitrary power dissipation in each layer of the 3D chip can be computed quickly. The PB method has been validated against commercial FEA software, ANSYS. Our method yields good results with maximum error less than 2% for various case studies and reduces the computation time by a factor of ∼ 60. The additional advantage is the possibility to evaluate different power dissipation profiles without the need to re-mesh the whole 3D chip structure.


2018 ◽  
Vol 24 (8) ◽  
pp. 5975-5981
Author(s):  
A Karthikeyan ◽  
P. S Mallick

Integrated circuits (IC’s) are sized for higher performance and packing density. Interconnects are major components to carry signals between transistors. Interconnect delay increases due to increase in length of interconnect. Optimization of interconnects is more essential to improve the performance of integrated circuits. Repeater insertion is an important technique used in optimizing the performance of interconnects in integrated circuits. Repeaters have to be designed to satisfy the performance constraints. In this paper we have designed a new repeater using transistors and analyzed the performance at various bias levels. The Repeater design was implemented at various technology nodes using PTM models and Bulk CMOS. Delay and power dissipation are analyzed for various voltage levels and load levels using Spice simulations. The results show that the proposed repeater has lesser delay compared to the conventional repeater with an increase of power dissipation and they are more suitable for Critical path in VLSI interconnects. They can be applicable for CNT based VLSI interconnects.


Author(s):  
Yasuhiro Kawase ◽  
Makoto Ikemoto ◽  
Masaya Sugiyama ◽  
Hidehiro Yamamoto ◽  
Hideki Kiritani

Three dimensional integrated circuits (3D-IC) have been proposed for the purpose of low power and high performance in recent years. Pre-applied inter chip fill is required for fine pitch interconnections, large chips, and also thin chips. In addition to them, pre-applied joining process with high thermal conductive inter chip fill (HT-ICF) is strongly required for the cooling of 3D-IC. Some kinds of matrix resins and thermal conductive fillers were simulated and evaluated for pre-applied ICF. As a result, matrix and cure agent appeared to be important to both pre-applied ICF process compatibility and thermal conductivity, so that we’d selected epoxy type matrix based on controlling super molecular structure due to its mesogen unit. And not only matrix but also filler appeared to be the key to improve thermal conductivity for pre-applied ICF at the same time. The thermal conductivity of conventional silica filler was only 1W/mK, so that, taking into account of thermal conductivity, density and its stability, we’d selected aluminum oxide and boron nitride as thermal conductive filler and optimized HT-ICF for pre-applied process. After composite was mixed and cured, some physical properties were measured and thermal conductivity was 1.8W/mK, CTE was below 21ppm/K and Tg was 120°C. Furthermore, new high thermal conductive filler was also studied. We’d synthesized completely new spherical BN (diameter <5um) and applied it to HT-ICF and the thermal conductivity was almost two times higher than conventional BN. In this study, we confirmed ICF physical characteristics and its pre-applied joining for 3D-IC and void-less joining was also discussed.


Author(s):  
Shaik Mahammad Ameer Afridi

Abstract: Today's high-performance processor is built with arithmetic logic units that add and subtract key components. Design considerations related to low power and high performance digital VLSI circuits have become more prevalent in today's world. In order to develop low-power and high-performance processors, the designers need to design their adder circuits with the required speed and power dissipation for their applications. This topic introduces the concept of a adder using MGDI Technique. The Exact Speculative Carry Look Ahead Adder the use of the Modified-GDI (Modified-Gate Diffusion Input) is cautioned in this work. The delay, location and energy trade off performs a integral role in VLSI. We already comprehend that designs which are of CMOS fashion occupy extra area might also eat extra strength consumption. The switching conduct of the circuit reason the heating up of integrated circuits affects the working stipulations of the purposeful unit. The adders are the most important parts of countless applications such as microprocessors, microcontrollers and digital signal processors and additionally in actual time applications. Hence it is necessary to minimize the adder blocks to format a perfect processor. This work is proposed on a 16 bit carry seem to be in advance adder is designed through using MGDI gate and 4T XOR gates and a speculator blocks. The proposed MGDI raise Look Ahead adder occupies 68% much less region and the strength consumption and the propagation extend additionally considerably reduces when in contrast to the traditional carry Look Ahead adder why because the variety transistors extensively reduces from 1448 (Conventional) to 456 (Proposed CLA). The simulation consequences of the proposed format carried out in Xilinx. Keywords: Delay, power dissipation, voltage, transistor sizing.


Author(s):  
Siva Gurrum ◽  
Shivesh Suman ◽  
Yogendra Joshi ◽  
Andrei Fedorov

Effective cooling of electronic chips is crucial for reliability and performance of electronic devices. Steadily increasing power dissipation in both devices and interconnects motivate the investigation of chip-centric thermal management as opposed to traditional package-centric solutions. In this work, we explore the fundamental limits for heat removal from a model chip for various configurations. Temperature rise when the chip is embedded in an infinite solid is computed for different thermal conductivities of the medium to pin down the best that can be achieved with conduction based thermal management. Next, a chip attached to a spreader plate with convection boundary condition on top was considered. A brief review of interface thermal resistances and partitioning of overall thermal resistance is presented for current generation microprocessors. Based upon the analysis it is concluded that far-term cooling solutions might necessitate integration with chip/interconnect-stack to meet the challenges. In addition, this would require concurrent thermal and electrical design/fabrication of future high-performance microprocessors.


2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.


Author(s):  
Phil Paik ◽  
Vamsee K. Pamula ◽  
Krishnendu Chakrabarty

Thermal management is becoming an increasingly important issue in integrated circuit (IC) design. The ability to cool ICs is quickly reaching a limit with today’s package-level solutions. While a number of novel cooling methods have been introduced, many of which are microfluidic approaches, these methods are unable to adaptively address the uneven thermal profiles and hot-spots generated in high performance ICs. In this paper, we present a droplet-based digital microfluidic cooling system for ICs that can adaptively cool hot-spots through real-time reprogrammable flow. This paper characterizes the effectiveness of microliter-sized droplets for cooling by determining the heat transfer coefficient of a droplet shuttling back and forth in an open system over a hot-spot at various speeds. Cooling is found to be significantly enhanced at higher flow rates of droplets. In order to further enhance cooling, the effect of varying droplet aspect ratio (width/height) in a confined system was also studied.


In the present emerging field for the research, the reduction of power has become a major design problem in VLSI technology. As the size of the system shrinking gradually it has become the one the prime concerns in the design of decoders. The main purpose of this paper is to minimize the power and delay capabilities comparison with ordinary CMOS design. To avoid power reduction by introducing a different technique. In this paper we are approaching the adiabatic circuit has been introduced. The power dissipation in the adiabatic circuits can be minimized when compared to conventional CMOS logic. The designing of decoders with the adiabatic logic can reduce the power average power by 10.80% and delay by 21%, 23% and 24% at different voltage levels compared to the conventional CMOS. Finally, Spice simulation results show the comparison results between the existing CMOS decoders and the proposed adiabatic logic-based decoders at 32nm technology in all cases.


2002 ◽  
Author(s):  
Νέστορας Ευμορφόπουλος

Ever since their birth in the late 60s, the integrated circuits based on complementary CMOS technology have dominated the VLSI scene, primarily due to their main distinctive feature which is the low power dissipation. In recent years, however, the ongoing increase in the number of processing elements (in perfect agreement with Moore’s law) and operating frequency, coupled with the decrease in feature size and supply voltage, have augmented the amounts of dissipated power and accentuated the associated reliability problems. Addressing these issues is compulsory and presents one of the biggest challenges facing the integrated circuit industry in the foreseeable future. This has brought forward the need for tools and methods that perform efficient analysis and estimation of the overall power requirements of a particular integrated circuit during the design phase. In contrast, however, to the other two basic design parameters, namely the delay and occupation area, the quantity of power is extremely difficult to estimate as it depends on the specific input vectors that inflict a transition in the circuit’s logic state. Since, as is well known, the total number of input vectors bears an exponential relationship with the number of primary inputs and is therefore prohibitively large to conduct an exhaustive examination, the only viable solution is to employ statistical techniques which transfer the burden from a large population to a much smaller sample. The component of power in CMOS circuits manifests in two different forms, that is the average and maximum power, both of which demand separate approaches for their estimation and have their own special significance within the broader design framework. In particular, the average power is the form that primarily defines the rating of power dissipation in a specified circuit, whereas the maximum power is related with arguably the biggest existing reliability problem which is the voltage drop on the power supply wires. The estimation of average power from a statistical viewpoint can be reduced to the classic problem of estimation of a statistical average (i.e. the average of a statistical population) on the basis of the central limit theorem (CLT), and as such, it is largely considered as a resolved matter in the literature. On the other hand, however, the estimation of maximum power still remains an open issue as the corresponding problem of estimation of a population maximum falls into a relatively unexploited area of statistics that is known as (asymptotic) extreme value theory. This particular theory is considerably more complex and not as readily applicable as the theory behind the CLT, but what is more important, it involves certain subtle points which if not addressed properly could seriously affect the overall estimation results. The present thesis attempts to fill this gap with a primary target that is twofold. At first, the development of a sound and efficient method for the estimation of a general population maximum using the aforementioned extreme value theory is pursued, while secondly this universal method is applied on the estimation of maximum power in CMOS VLSI circuits. The method being developed is mathematically rigorous and based on a solid theoretical foundation, while in order to successfully deal with the intricate points of the theory incorporates some unique concepts and techniques which appear for the first time in the literature. The whole development is carried out in full comparison with the established approach for estimation of a statistical average and its respective application to average power estimation. Apart from providing an effective solution to the problem of maximum power estimation, the proposed method boasts some very attractive properties such as relatively small number of required input vectors that does not depend on the circuit size or complexity, “a priori” specifiable error and confidence levels for the final estimate, remarkably simple algorithmic implementation that does not include time- consuming iterative loops, and lastly simulation-based operation which ensures the necessary accuracy in the assembly of power data as well as easy incorporation within any design flow for digital integrated circuits. All the above are being supported by experimental results upon a set of standard benchmark circuits. Moreover, the necessary guidelines for the exploitation of the method to the addressing of the voltage drop problem are given, thus laying the foundation for future work in the area.


A novel non-CMOS 4-1 multiplexer using heterogeneous logic style is presented in this brief. The heterogeneous logic design uses the combination of three basic logic styles such as Dual Value Logic (DVL), Transmission Gate Logic (TGL) and Simple Pass Transistor Logic (SPTL). The design uses only two stacking transistors in between the supply rails. Only 16 transistors are required for the actual logic function in the proposed state-of-the-art design. Number of transistors is reduced by distinctly choosing DVL and TGL in the first stage as per the input combination. Later stage of the multiplexer is constructed using SPTL. A required logic style is chosen at first and second stage in accordance with input bit combination to minimize the number of transistors, enhance the speed of logic transition and reduce the average power dissipation. The design and simulation analysis of proposed circuit is carried out at 22nm technology using Pyxis Schematic and Pyxis Simulator. Comparison of wide-ranging simulated results of proposed design, CMOS tree multiplexer and CMOS NOR multiplexer at various supply voltages and frequencies on same technology node manifests that the performance of proposed heterogeneous multiplexer is better in terms of speed and power dissipation. At minimum possible supply voltage of 0.8V and at moderate frequency of 1GHz, the proposed multiplexer achieves, reduced power dissipation of 17.3% and reduced in delay of 9.14%. The count of transistors including inverters is also less compared to CMOS tree type and CMOS NOR type multiplexers. However, robustness of mixed logic style designs is to be improved compared to CMOS designs.


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